|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces显示文摘The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum(BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing. | Cizhe Fang Qiyu Yang Qingchen Yuan Xuetao Gan Jianlin Zhao Yao Shao Yan Liu Genquan Han Yue Hao | 2021 | Opto-Electronic Advances2021，4，6： | 8 |
| 2 | A review:Photonics devices,architectures,and algorithms for optical neural computing显示文摘The explosive growth of data and information has motivated various emerging non-von Neumann computational approaches in the More-than-Moore era.Photonics neuromorphic computing has attracted lots of attention due to the fascinating advantages such as high speed,wide bandwidth,and massive parallelism.Here,we offer a review on the optical neural computing in our research groups at the device and system levels.The photonics neuron and photonics synapse plasticity are presented.In addition,we introduce several optical neural computing architectures and algorithms including photonic spiking neural network,photonic convolutional neural network,photonic matrix computation,photonic reservoir computing,and photonic reinforcement learning.Finally,we summarize the major challenges faced by photonic neuromorphic computing,and propose promising solutions and perspectives. | Shuiying Xiang Yanan Han Ziwei Song Xingxing Guo Yahui Zhang Zhenxing Ren Suhong Wang Yuanting Ma Weiwen Zou Bowen Ma Shaofu Xu Jianji Dong Hailong Zhou Quansheng Ren Tao Deng Yan Liu Genquan Han Yue Hao | 2021 | Journal of Semiconductors2021，42，2： | 7 |
| 3 | Recent progress of integrated circuits and optoelectronic chips显示文摘Integrated circuits(ICs)and optoelectronic chips are the foundation stones of the modern information society.The IC industry has been driven by the so-called'Moore's law'in the past 60 years,and now has entered the post Moore's law era.In this paper,we review the recent progress of ICs and optoelectronic chips.The research status,technical challenges and development trend of devices,chips and integrated technologies of typical IC and optoelectronic chips are focused on.The main contents include the development law of IC and optoelectronic chip technology,the IC design and processing technology,emerging memory and chip architecture,brain-like chip structure and its mechanism,heterogeneous integration,quantum chip technology,silicon photonics chip technology,integrated microwave photonic chip,and optoelectronic hybrid integrated chip. | Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI | 2021 | Science China(Information Sciences)2021，64，10： | 7 |
| 4 | Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection显示文摘We propose and numerically realize an optical spike-timing dependent plasticity(STDP)scheme by using a single vertical-cavity surface-emitting laser(VCSEL).In the scheme,the VCSEL is subjected to an orthogonally-polarized continuous-wave optical injection(OPCWOI)and dual-polarized pulsed optical injections(DPPOI).Based on the widely used spin-flip model,the response spiking dynamics of VCSEL is numerically studied,and then the optical STDP in a single VCSEL is explored.The roles of bias current,the strength of OPCWOI and DPPOI,and the frequency detuning on the optical STDP curve are numerically analyzed.It is found that,by simultaneously utilizing the response spiking dynamics in two orthogonal polarization modes,an optical STDP could be achieved by using a single VCSEL.Furthermore,the weight update of STDP curve can be calculated in real-time.Additionally,the STDP curves can also be controlled by adjusting some controllable parameters.The real-time optical STDP based on a single VCSEL is numerically realized for the first time,which paves the way towards fully VCSELs-based photonic neuromorphic systems with low power consumption. | Shuiying XIANG Yanan HAN Xingxing GUO Aijun WEN Genquan HAN Yue HAO | 2020 | Science China(Information Sciences)2020，63，6： | 3 |
| 5 | Design technology co-optimization towards sub-3 nm technology nodes显示文摘Over the past half century,Moore’s Law has played a crucial role in the development of the semiconductor field,which depends on straightforwardly dimensional scaling with approximately a two-year cadence.Significant benefits of performance,power,area,and cost(PPAC)in microchips are expected at each technology node.However,aggressive pitchbased scaling by resolution enhancement techniques becomes increasingly challenging to sustain. | Genquan Han Yue Hao | 2021 | Journal of Semiconductors2021，42，2： | 1 |
| 6 | Mobility enhancement techniques for Ge and GeSn MOSFETs显示文摘The performance enhancement of conventional Si MOSFETs through device scaling is becoming increasingly difficult.The application of high mobility channel materials is one of the most promising solutions to overcome the bottleneck.The Ge and GeSn channels attract a lot of interest as the alternative channel materials,not only because of the high carrier mobility but also the superior compatibility with typical Si CMOS technology.In this paper,the recent progress of high mobility Ge and GeSn MOSFETs has been investigated,providing feasible approaches to improve the performance of Ge and GeSn devices for future CMOS technologies. | Ran Cheng Zhuo Chen Sicong Yuan Mitsuru Takenaka Shinichi Takagi Genquan Han Rui Zhang | 2021 | Journal of Semiconductors2021，42，2： | 1 |
| 7 | β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process显示文摘β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si(GaOISi)substrate fabricated by ion-cutting process.Enhancement(E)-and depletion(D)-modeβ-Ga2O3 transistors are realized on by varying the channel thickness(Tch).E-mode GaOISi transistor with a Tchof 15 nm achieves a high threshold voltage VTHof^8 V.With the same T increase,GaOISi transistors demonstrate more stable ON-current IONand OFF-current IOFFperformance compared to the reported devices on bulk Ga2O3 wafer.Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C,respectively. | YiBo Wang WenHui Xu TianGui You FengWen Mu HaoDong Hu Yan Liu Hao Huang Tadatomo Suga GenQuan Han Xin Ou Yue Hao | 2020 | Science China(Physics,Mechanics & Astronomy)2020，63，7： | 1 |
| 8 | Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra显示文摘 | Cizhe Fang Yan Liu Qingfang Zhang Genquan Han Xi Gao Yao Shao Jincheng Zhang Yue Hao | 2018 | Opto-Electronic Advances2018，1，3： | 0 |
| 9 | Heterogeneous integration technology for the thermal management of Ga_(2)O_(3) power devices显示文摘The more severe phonon-phonon scattering in gallium oxide(Ga_(2)O_(3)) crystals leads to lower thermal conductivity compared to most other semiconductor materials. To address this issue and enhance the heat dissipation in Ga_(2)O_(3) devices, one practical solution is to integrate Ga_(2)O_(3) with a highly thermally conductive substrate, such as SiC and Si. Currently,there are three methods employed for the heterogeneous integration of Ga_(2)O_(3) with highly thermally conductive substrates:mechanical exfoliation, hetero-epitaxy growth, and ion-cutting technique. | Genquan Han Tiangui You Yibo Wang Zheng-Dong Luo Xin Ou Yue Hao | 2023 | Journal of Semiconductors2023，44，6： | 0 |
| 10 | Preface to Special Issue on Towards High Performance Ga_(2)O_(3) Electronics: Epitaxial Growth and Power Devices(Ⅰ)显示文摘There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga_(2)O_(3) technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications. | Genquan Han Shibing Long Yuhao Zhang Yibo Wang Zhongming Wei | 2023 | Journal of Semiconductors2023，44，6： | 0 |
| 11 | Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline��β-Ga_(2)O_(3)thin film on SiC显示文摘The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of��β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of��β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline��β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred��β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated��β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the��β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a��β-Ga_(2)O_(3)/SiC heterostructured material and a��β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on��β-Ga_(2)O_(3)/SiC to be one quarter that on the��β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the��-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in��β-Ga_(2)O_(3)-based devices. | Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang | 2021 | Fundamental Research2021，1，6： | 0 |
| 12 | Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K显示文摘The steep subthreshold swing(SS)could be achieved in negative capacitance field-effect transistors(NCFET)to reduce power dissipation in modern electronics.Polycrystalline Hf O2-based ferroelectric materials have attracted great interest due to their better thickness scalability and CMOS process compatibility[1]. | Huan LIU Qiyu YANG Chengji JIN Jiajia CHEN Lulu CHOU Xiao YU Yan LIU Genquan HAN | 2024 | Science China(Information Sciences)2024，67，1： | 0 |
| 13 | Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing显示文摘Traditional charge-based memories,such as dynamic random-access memory(DRAM)and flash,are approaching their scaling limits.A variety of resistance-based memories,such as phase-change memory(PCM),magnetic random-access memory(MRAM)and resistive random-access memory(RRAM),have been long considered for emerging memory applications thanks to their non-volatility,fast speed,low power,and compact size for potentially high-density integration. | Yue Hao Huaqiang Wu Yuchao Yang Qi Liu Xiao Gong Genquan Han Ming Li | 2021 | Journal of Semiconductors2021，42，1： | 0 |
| 14 | Spiking information processing in a single photonic spiking neuron chip with double integrated electronic dendrites显示文摘Dendrites,branches of neurons that transmit signals between synapses and soma,play a vital role in spiking information processing,such as nonlinear integration of excitatory and inhibitory stimuli.However,the investigation of nonlinear integration of dendrites in photonic neurons and the fabrication of photonic neurons including dendritic nonlinear integration in photonic spiking neural networks(SNNs)remain open problems.Here,we fabricate and integrate two dendrites and one soma in a single Fabry–Perot laser with an embedded saturable absorber(FP-SA)neuron to achieve nonlinear integration of excitatory and inhibitory stimuli.Note that the two intrinsic electrodes of the gain section and saturable absorber(SA)section in the FP-SA neuron are defined as two dendrites for two ports of stimuli reception,with one electronic dendrite receiving excitatory stimulus and the other receiving inhibitory stimulus.The stimuli received by two electronic dendrites are integrated non-linearly in a single FP-SA neuron,which generates spikes for photonic SNNs.The properties of frequency encoding and spatiotemporal encoding are investigated experimentally in a single FP-SA neuron with two electronic dendrites.For SNNs equipped with FP-SA neurons,the range of weights between presynaptic neurons and postsynaptic neurons is varied from negative to positive values by biasing the gain and SA sections of FP-SA neurons.Compared with SNN with all-positive weights realized by only biasing the gain section of photonic neurons,the recognition accuracy of Iris flower data is improved numerically in SNN consisting of FP-SA neurons.The results show great potential for multi-functional integrated photonic SNN chips. | YAHUI ZHANG SHUIYING XIANG XINGXING GUO YANAN HAN YUECHUN SHI XIANGFEI CHEN GENQUAN HAN YUE HAO | 2023 | Photonics Research2023，11，12： | 0 |
| 15 | Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics显示文摘In this paper,unique ferroelectric-like characteristics in amorphous(a-)ZrO_(2)-based devices enabled by mobile ions are systematically investigated at room temperature and cryogenic.The physical origin of the ferroelectric-like behaviors of the metal/a-ZrO_(2)/metal capacitor is confirmed to be the migration of ions exhibiting strong frequency dependency due to the limited velocity of the mobile ions,which is proven by the comparison between experimental results and theoretical analysis.The ferroelectric-type hysteresis will be reduced sharply with the decrease of the temperature,which is essentially different from the reported doped-HfO_(2)FeFET.This further confirms that the origin of the ferroelectric-like characteristics is the migration and redistribution of the mobile ions. | Huan LIU Jiajia CHEN Chengji JIN Xiao YU Yan LIU Genquan HAN | 2023 | Science China(Information Sciences)2023，66，10： | 0 |
| 16 | High mobility germanium-on-insulator p-channel FinFETs显示文摘Dear editor,Over the past decade,germanium has attracted great interest as a promising channel material for p-channel metal oxide semiconductor field-effect-transistor(MOSFET),owing to its higher hole mobility over Si[1]. | Huan LIU Genquan HAN Jiuren ZHOU Yan LIU Yue HAO | 2021 | Science China(Information Sciences)2021，64，4： | 0 |
| 17 | Impact of polarization switching on the effective carrier mobility of HfZrO_(x) ferroelectric field-effect transistor显示文摘Doped-HfO_(2) ferroelectrics have attracted tremendous research interest for non-volatile memory and memory-incomputing applications due to their CMOS compatibility,advantages of non-destructive reading,and low power consumption[1,2]. | Fenning LIU Yue PENG Wenwu XIAO Yan LIU Xiao YU Genquan HAN | 2023 | Science China(Information Sciences)2023，66，6： | 0 |
| 18 | Hf_(0.5)Zr_(0.5)O_(2)1T–1C FeRAM arrays with excellent endurance performance for embedded memory显示文摘Since the initial report of HfO2-based ferroelectric films in 2011,great attention has been paid to ferroelectric field-effect transistors and ferroelectric random-access memories(FeRAMs)[1–3].Up to now,many efforts have been devoted to realizing the industrialization of HfO2-based FE films.However,the limited fatigue performance has always been the main problem to be resolved. | Wenwu XIAO Yue PENG Yan LIU Huifu DUAN Fujun BAI Bing YU Qiwei REN Xiao YU Genquan HAN | 2023 | Science China(Information Sciences)2023，66，4： | 0 |
| 19 | Preface to Special Issue on Towards High Performance Ga_(2)O_(3) Electronics:Power Devices and DUV Optoelectronic Devices(Ⅱ)显示文摘Gallium oxide(Ga_(2)O_(3))has garnered world-wide atten-tion as an ultrawide-bandgap semiconductor material from the area of power electronics and DUV optical devices benefit-ing from its outstanding electronic and optoelectronic proper-ties.For one thing,since Ga_(2)O_(3)features high critical break-down field of 8 MV/cm and Baliga’s figure of merit(BFOM)of 3444,it is a promising candidate for advanced high-power applications.For another thing,due to the bandgap directly corresponding to the deep-ultraviolet(DUV)region,Ga_(2)O_(3)is widely used in DUV optoelectronic devices. | Shibing Long Genquan Han Yuhao Zhang Yibo Wang Zhongming Wei | 2023 | Journal of Semiconductors2023，44，7： | 0 |
| 20 | Preface to the Special Issue on Beyond Moore:Three-Dimensional(3D)Heterogeneous Integration显示文摘In the past few decades,the Moore’s Law has been the revolutionary force for our integrated circuit(IC)industry.However,the tremendous challenges faced in continuous transistor physical down-scaling and the unprecedented demands for computing and storage capabilities require our urgent search for strategies and solutions to integrate diverse materials,devices,circuits,and architectures in a 3D vertically stacked manner so that they can orchestrate in the most effective way to provide significantly enhanced functionalities as well as superior speed,energy,bandwidth,form fact,and cost. | Yue Hao Huaqiang Wu Yuchao Yang Qi Liu Xiao Gong Genquan Han Ming Li | 2021 | Journal of Semiconductors2021，42，2： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员