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| 1 | Recent progress in the synthesis of graphene/CNT composites and the energy-related applications显示文摘Graphene and carbon nanotube(CNT) are representative carbon nanomaterials which have aroused numerous research interest due to their extraordinary material properties and promising application potentials,especially in the energy storage and conversion areas.However,the agglomeration happening in these materials has largely blocked their applications.Hybridization of CNT with graphene can,on one hand,prevent the agglomeration behavior,on the other hand,generate a synergistic effect between them with enhanced physical and chemical properties.There have been many studies conducted to find out the suitable approaches to synthesize graphene/CNT composites,and realize the application potentials of these structures.Based on the recent advances,this paper reviews the current research progress that has been achieved in synthesizing graphene/CNT composites,and the energy-related applications.Through this review,we aim at stimulating more significant research on this subject. | Xin Wu Fengwen Mu Haiyan Zhao | 2020 | Journal of Materials Science & Technology2020，52，20： | 6 |
| 2 | Low tempera- ture bonding of Cu metal through sintering of Ag nanotparticles for haigh temperature packaging 显示文摘 | Zou Guisheng Yan Jianfeng Mu Fengwen | 2011 | The Open Surface Journal2011，3，： | 1 |
| 3 | β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process显示文摘β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si(GaOISi)substrate fabricated by ion-cutting process.Enhancement(E)-and depletion(D)-modeβ-Ga2O3 transistors are realized on by varying the channel thickness(Tch).E-mode GaOISi transistor with a Tchof 15 nm achieves a high threshold voltage VTHof^8 V.With the same T increase,GaOISi transistors demonstrate more stable ON-current IONand OFF-current IOFFperformance compared to the reported devices on bulk Ga2O3 wafer.Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C,respectively. | YiBo Wang WenHui Xu TianGui You FengWen Mu HaoDong Hu Yan Liu Hao Huang Tadatomo Suga GenQuan Han Xin Ou Yue Hao | 2020 | Science China(Physics,Mechanics & Astronomy)2020，63，7： | 1 |
| 4 | Low temperature bonding of Cu metal through sintering of Ag nanoparticles for high temperature electronic application显示文摘 | Zou Guisheng Yan Jianfeng Mu Fengwen | | 0，，03： | 1 |
| 5 | Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline��β-Ga_(2)O_(3)thin film on SiC显示文摘The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of��β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of��β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline��β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred��β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated��β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the��β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a��β-Ga_(2)O_(3)/SiC heterostructured material and a��β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on��β-Ga_(2)O_(3)/SiC to be one quarter that on the��β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the��-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in��β-Ga_(2)O_(3)-based devices. | Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang | 2021 | Fundamental Research2021，1，6： | 0 |
| 6 | Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100)substrate by ion-cutting technology显示文摘Ion-cutting technology is an ingenious solution to the highquality heterogeneous integration of Ga N thin films with CMOS-compatible Si(100)substrate,which provides a platform to combine Ga N-based optoelectronics,high-frequency and high-power electronics with digital signal processing,logic computation,and control of Si(100)CMOS[1]. | Hangning SHI Ailun YI Jiaxin DING Xudong LIU Qingcheng QIN Juemin YI Junjie HU Miao WANG Demin CAI Jianfeng WANG Ke XU Fengwen MU Tadatomo SUGA RenéHELLER Mao WANG Shengqiang ZHOU Wenhui XU Kai HUANG Tiangui YOU Xin OU | 2023 | Science China(Information Sciences)2023，66，11： | 0 |
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