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| 1 | Recent progress of integrated circuits and optoelectronic chips显示文摘Integrated circuits(ICs)and optoelectronic chips are the foundation stones of the modern information society.The IC industry has been driven by the so-called'Moore's law'in the past 60 years,and now has entered the post Moore's law era.In this paper,we review the recent progress of ICs and optoelectronic chips.The research status,technical challenges and development trend of devices,chips and integrated technologies of typical IC and optoelectronic chips are focused on.The main contents include the development law of IC and optoelectronic chip technology,the IC design and processing technology,emerging memory and chip architecture,brain-like chip structure and its mechanism,heterogeneous integration,quantum chip technology,silicon photonics chip technology,integrated microwave photonic chip,and optoelectronic hybrid integrated chip. | Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI | 2021 | Science China(Information Sciences)2021，64，10： | 7 |
| 2 | β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process显示文摘β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si(GaOISi)substrate fabricated by ion-cutting process.Enhancement(E)-and depletion(D)-modeβ-Ga2O3 transistors are realized on by varying the channel thickness(Tch).E-mode GaOISi transistor with a Tchof 15 nm achieves a high threshold voltage VTHof^8 V.With the same T increase,GaOISi transistors demonstrate more stable ON-current IONand OFF-current IOFFperformance compared to the reported devices on bulk Ga2O3 wafer.Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C,respectively. | YiBo Wang WenHui Xu TianGui You FengWen Mu HaoDong Hu Yan Liu Hao Huang Tadatomo Suga GenQuan Han Xin Ou Yue Hao | 2020 | Science China(Physics,Mechanics & Astronomy)2020，63，7： | 1 |
| 3 | Heterogeneous integration technology for the thermal management of Ga_(2)O_(3) power devices显示文摘The more severe phonon-phonon scattering in gallium oxide(Ga_(2)O_(3)) crystals leads to lower thermal conductivity compared to most other semiconductor materials. To address this issue and enhance the heat dissipation in Ga_(2)O_(3) devices, one practical solution is to integrate Ga_(2)O_(3) with a highly thermally conductive substrate, such as SiC and Si. Currently,there are three methods employed for the heterogeneous integration of Ga_(2)O_(3) with highly thermally conductive substrates:mechanical exfoliation, hetero-epitaxy growth, and ion-cutting technique. | Genquan Han Tiangui You Yibo Wang Zheng-Dong Luo Xin Ou Yue Hao | 2023 | Journal of Semiconductors2023，44，6： | 0 |
| 4 | Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline��β-Ga_(2)O_(3)thin film on SiC显示文摘The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of��β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of��β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline��β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred��β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated��β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the��β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a��β-Ga_(2)O_(3)/SiC heterostructured material and a��β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on��β-Ga_(2)O_(3)/SiC to be one quarter that on the��β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the��-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in��β-Ga_(2)O_(3)-based devices. | Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang | 2021 | Fundamental Research2021，1，6： | 0 |
| 5 | Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100)substrate by ion-cutting technology显示文摘Ion-cutting technology is an ingenious solution to the highquality heterogeneous integration of Ga N thin films with CMOS-compatible Si(100)substrate,which provides a platform to combine Ga N-based optoelectronics,high-frequency and high-power electronics with digital signal processing,logic computation,and control of Si(100)CMOS[1]. | Hangning SHI Ailun YI Jiaxin DING Xudong LIU Qingcheng QIN Juemin YI Junjie HU Miao WANG Demin CAI Jianfeng WANG Ke XU Fengwen MU Tadatomo SUGA RenéHELLER Mao WANG Shengqiang ZHOU Wenhui XU Kai HUANG Tiangui YOU Xin OU | 2023 | Science China(Information Sciences)2023，66，11： | 0 |
| 6 | Ultra-dense planar metallic nanowire arrays with extremely large anisotropic optical and magnetic properties显示文摘为对晶片尺寸可伸缩的极端稠密的平面金属性的 nanowire 数组的生产的一个 nanofabrication 方法被介绍。方法基于一个有效模板免职过程在仅仅二步与极端整齐种多样的金属性的 nanowire 数组。首先, III-V 半导体底层被一根低精力的离子横梁在提高的温度照耀,形成由一个反向的取向附生过程由于的一个高度订的 nanogroove 模式表面空缺自己组装。第二,多样的金属性的 nanowire 穿(Au, Fe, Ni,公司, FeAl 合金) 被免职在一个看一眼的发生角度在这些 III-V 模板上制作。这个方法允许有频率的数组击倒到 45 nm 的金属性的 nanowire 的制造可伸缩直到晶片尺寸制造。作为典型高贵、磁性的金属,这里生产的 Au 和 Fe nanowire 数组展出了大各向异性光并且磁性分别地。Au nanowire 数组的局部性的表面电浆子回声(LSPR ) 的刺激导致了高电场改进,它被用来在散布的提高表面的拉曼(重量的单位) 检测酞毒(CoPc ) 。而且, Fe nanowire 数组显示出一架很高的在里面飞机约 412 mT 的磁性的 anisotropy,它磁性的 anisotropy 还回答的最大的在里面飞机可以被报导那完全在一部薄电影的飞机以内经由形状 anisotropy 被导致。 | Qi Jia Xin Ou Manuel Langer Benjamin Schreiber Jorg Grenzer Pablo F. Siles Raul D. Rodriguez Kai Huang Ye Yuan Alireza Heidarian Rene Hubner Tiangui You Wenjie Yu Kilian Lenz Jurgen Lindner Xi Wang Stefan Facsko | 2018 | Nano Research2018，11，7： | 0 |
| 7 | Si-based InGaAs photodetectors on heterogeneous integrated substrate显示文摘In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate.The photo responsivities of both devices measured at 1.55μm are comparable,which are about 0.808-0.828 A W^(-1).Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K,the peak detectivities of both PDs are comparable.In general,the overall performance of the InPOI-based PD is comparable to the InP-based PD,demonstrating that the ion-slicing technology is a promising route to enable the highquality Si-based InP platform for the full photonic integration on a Si substrate. | Chaodan Chi Jiajie Lin Xingyou Chen Chengli Wang Ziping Li Liping Zhang Zhanglong Fu Xiaomeng Zhao Hua Li Tiangui You Li Yue Jiaxiang Zhang Niefeng Sun Peng Gao Robert Kudrawiec Shumin Wang Xin Ou | 2021 | Science China(Physics,Mechanics & Astronomy)2021，64，6： | 0 |
| 8 | Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces显示文摘Heterogeneous integration of InP and GaS b on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices.In this study,2-inch 180-nm-thick InP and 185-nmthick GaS b thin layers were successfully transferred onto the Si substrates to form high-quality and ultrasmooth InP/Si and GaS b/Si templates using molecular beam epitaxy(MBE)and the ion-slicing technique together with selective chemical etching.The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaS b thin films.The sacrificial layers were completely etched off by selective chemical etching,leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaS b/Si template,respectively.Thus,the chemical mechanical polishing(CMP)process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates.Furthermore,the donor substrate is not consumed and can be recycled to reduce the cost,which provides a paradigm for the sustainable and economic development of the Si integration platform. | Tingting JIN Jiajie LIN Tiangui YOU Xiaolei ZHANG Hao LIANG Yifan ZHU Jialiang SUN Hangning SHI Chaodan CHI Min ZHOU Robert KUDRAWIEC Shumin WANG Xin OU | 2022 | Science China(Information Sciences)2022，65，8： | 0 |
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