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| 1 | Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil显示文摘A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality(ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of(5 ×50) cm^2 dimension with >99% ultra-highly oriented grains.This growth was achieved by:(1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate;(2)epitaxial growth of graphene islands on the Cu(1 1 1) surface;(3) seamless merging of such graphene islands into a graphene film with high single crystallinity and(4) the ultrafast growth of graphene film.These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains(if any), has a mobility up to ~23,000 cm^2 V^(-1)s^(-1)at 4 K and room temperature sheet resistance of ~230 Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost. | Xiaozhi Xu Zhihong Zhang Jichen Dong Ding Yi Jingjing Niu Muhong Wu Li Lin Rongkang Yin Mingqiang Li Jingyuan Zhou Shaoxin Wang Junliang Sun Xiaojie Duan Peng Gao Ying Jiang Xiaosong Wu Hailin Peng Rodney S. Ruoff Zhongfan Liu Dapeng Yu Enge Wang Feng Ding Kaihui Liu | 2017 | Science Bulletin2017，62，15： | 40 |
| 2 | Characteristics analysis of a novel centralized-driving flip-flow screen显示文摘During screening operation, blinding or clogging of screen perforations generally occurs to reduce the sieving capacity and efficiency. Recently, the flip-flow screening has been widely recognized as a feasible method to deal with the problem. In this paper, a novel centralized-driving flip-flow screen(CFS) was developed for the separation of fine and moist coal, and the key structures, namely, a centralized-driving mechanism and a quasi-circle beam mounted with the mat were designed for high reliability and stability. By means of a test on an experimental prototype, the effect of some factors, i.e., initial stretch and hardness of the polyurethane panel, respectively, and the rotation speed of the driving motor on the kinematic characteristic of the screen surface was investigated. Results show that without an initial stretch, the sieve mat generates the largest vibratory amplitude while the slacker the sieve mat initially is, the smaller amplitude it will accomplish. And an increase in the rotation speed could cause a rise in the vibratory amplitude. Unlike the two factors, the hardness does not have a definite effect on the kinematic performance, on which a further study is required. Finally, screening processing on a laboratory prototype was conducted to draw the conclusion that the developed CFS also has a high sieving efficiency for the fine and moist coal. | Peng Liping Li Fengming Dong Hailin Liu Chusheng Zhao Yuemin Duan Chenlong | 2014 | International Journal of Mining Science and Technology2014，24，2： | 9 |
| 3 | Exploitation of Bi2O2Se/graphene van der Waals heterojunction for creating efficient photodetectors and short-channel field-effect transistors显示文摘The formation of heterojunction within solid-state devices enables them with eventually high performances,but provides a challenge for material synthesis and device fabrication because strict conditions such as lattice match are needed.Herein,we show a facile method to fabricate a van der Waals(vdW)heterojunction between two-dimensional(2D)bismuth oxyselenide(Bi2O2Se)and graphene,during which the graphene is directly transferred to the Bi2O2Se and served as a lowcontract-resistant electrode with small work function mismatch(~50 meV).As an optoelectronic device,the Bi2O2Se/graphene vdW heterojunction allows for the efficient sensing toward 1200-nm incident laser.Regarding the application of fieldeffect transistors(FETs),the short-channel(50 nm)sample can be synthesized by utilizing these two 2D materials(ie,channel:Bi2O2Se;drain/source terminal:graphene)and the n-type characteristic can be observed with the accordant field modulation.It is confirmed that we show a simple way to prepare the vdW heterojunction which is aiming to the high-performance applications among optoelectronics and FETs. | Congwei Tan Shipu Xu Zhenjun Tan Luzhao Sun Jinxiong Wu Tianran Li Hailin Peng | 2019 | InfoMat2019，1，3： | 8 |
| 4 | Controlled synthesis of single-crystal SnSe nanoplates显示文摘二维的分层的 IVVI chalcogenides 在下一代的 optoelectronic 为应用正在吸引大兴趣,光电、热电的设备。然而,在高质量的 IVVI chalcogenide nanostructures 的可控制的合成的大挑战迄今为止妨碍了他们的深入的研究和实际应用。第一次,这里,我们由蒸汽运输免职在云母底层上以一种控制方式报导单个水晶的 IVVI SnSe nanoplates 的可行合成。成长得当的 SnSe nanoplates 有近似方形的形状,可控制的方面长度从 1 ~ 6 m 变化。电的运输和 optoelectronic 大小证明同样获得的 SnSe nanoplates 显示 p 类型电导率和高 photoresponsivity。 | Shuli Zhao Huan Wang Yu Zhou Lei Liao Ying Jiang Xiao Yang Guanchu Chen Min Lin Yong wang Hailin Peng Zhongfan Liu | 2015 | Nano Research2015，8，1： | 7 |
| 5 | Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer显示文摘各向异性二维(2D ) 分层的材料金来二硫化物(因为它的不平常的性质和有希望的应用, ReSe 2) 吸引了可观的注意在电子并且 optoelectronic 设备。因为它的低格子对称和夹层去耦,各向异性的生长和 out-of-plane 生长不管多么容易发生,产出厚薄片,树枝状的结构,或象花的结构。在这研究,我们表明了一个自底向上的方法为控制并且由货车 der Waals 取向附生的 ReSe 2 的可伸缩的合成。完成可控制的生长,一与一个限制反应空格微反应堆被在化学蒸汽免职系统叠二云母底层构造。在限制反应空间以内, ReSe 2 的成核密度和生长率显著地被减少,赞成有一致单层厚度的 ReSe 2 的大区域的合成。有生长温度的 ReSe 2 的词法进化显示各向异性的生长在低生长温度被压制(< 600 吗? | Fangfang Cui Xiaobo Li Qingliang Feng Jianbo Yin Lin Zhou Dongyan Liu Kaiqiang Liu Xuexia He Xing Liang Shengzhong Liu Zhibin Lei Zonghuai Liu Hailin Peng Jin Zhang Jing Kong Hua Xu | 2017 | Nano Research2017，10，8： | 6 |
| 6 | A transparent, conducting tape for flexible electronics显示文摘透明电极是为象显示和薄电影的太阳能电池那样的 optoelectronic 设备的必要部件。传统地,透明的进行的层的免职并且封上设备是分开的步。这里,我们在一盘高度透明、传导性、灵活的磁带上报导,它能被把银 nanowire 网络转移到常规透明磁带获得。我们利用了磁带的粘质减少在银 nanowires 之间的连接抵抗并且进一步保护 nanowires 免受腐蚀,氧化和机械损坏的伤害。由这个简单方法,我们与高透明性获得了一盘灵活磁带(~90% 在 550 nm 波长) 并且低表抵抗(接近 22 ? 潣灭獯瑩獥吗?? | Ya Huang Suiyang Liao Jie Ren Bilal Khalid Hailin Peng Hui Wu | 2016 | Nano Research2016，9，4： | 5 |
| 7 | Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays显示文摘The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on singlecrystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel(Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the Cu Ni alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition(CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays(LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for highperformance electronics and optoelectronics that are compatible with wafer process. | Bing Deng Zhaowei Xin Ruiwen Xue Shishu Zhang Xiaozhi Xu Jing Gao Jilin Tang Yue Qi Yani Wang Yan Zhao Luzhao Sun Huihui Wang Kaihui Liu Mark H. Rummeli Lu-Tao Weng Zhengtang Luo Lianming Tong Xinyu Zhang Changsheng Xie Zhongfan Liu Hailin Peng | 2019 | Science Bulletin2019，64，10： | 4 |
| 8 | Source complexity of the 2016 M_W7.8 Kaikoura (New Zealand) earthquake revealed from teleseismic and InSAR data显示文摘On November 13, 2016, an MW7.8 earthquake struck Kaikoura in South Island of New Zealand. By means of back-projection of array recordings, ASTFs-analysis of global seismic recordings, and joint inversion of global seismic data and co-seismic In SAR data, we investigated complexity of the earthquake source. The result shows that the 2016 MW7.8 Kaikoura earthquake ruptured about 100 s unilaterally from south to northeast(~N28°–33°E), producing a rupture area about 160 km long and about 50 km wide and releasing scalar moment 1.01×1021 Nm. In particular, the rupture area consisted of two slip asperities, with one close to the initial rupture point having a maximal slip value ~6.9 m while the other far away in the northeast having a maximal slip value ~9.3 m. The first asperity slipped for about 65 s and the second one started 40 s after the first one had initiated. The two slipped simultaneously for about 25 s.Furthermore, the first had a nearly thrust slip while the second had both thrust and strike slip. It is interesting that the rupture velocity was not constant, and the whole process may be divided into 5 stages in which the velocities were estimated to be 1.4 km/s, 0 km/s, 2.1 km/s, 0 km/s and 1.1 km/s, respectively. The high-frequency sources distributed nearly along the lower edge of the rupture area, the highfrequency radiating mainly occurred at launching of the asperities, and it seemed that no high-frequency energy was radiated when the rupturing was going to stop. | HaiLin Du Xu Zhang LiSheng Xu WanPeng Feng Lei Yi Peng Li | 2018 | Earth and Planetary Physics2018，2，4： | 4 |
| 9 | Investigation of black phosphorus as a nano-optical polarization element by polarized Raman spectroscopy显示文摘 | Nannan Mao Shishu Zhang Jinxiong Wu Huihui Tian Juanxia Wu Hua Xu Hailin Peng Lianming Tong Jin Zhang | 2018 | Nano Research2018，11，6： | 4 |
| 10 | Large-area chemical vapor deposition-grown monolayer graphene-wrapped silver nanowires for broad-spectrum and robust antimicrobial coating显示文摘抗菌剂系统的新类型着急地由于获得抵抗到通常在日常生活和医疗保健使用的抗菌素的病原的微生物引起的种类的出现被需要。在这研究,我们第一次开发了用途广泛、柔韧的抗菌剂薄电影涂层基于大区域的化学蒸汽免职(CVD ) 种包 graphene 的银 nanowires (AgNWs ) 。抗菌剂 graphene/AgNW 混血儿涂层能在塑料由一个完整的 roll-to-roll 过程拍摄的商业灵活透明乙烯乙烯基 acetate/ 聚乙烯 terephthalate (EVA/PET ) 上被使用。graphene/AgNW 混血儿涂层显示出用途广泛的抗菌剂活动对克否定(Escherichia coli ) 并且克积极的细菌(葡萄球菌 aureus ) ,和真菌(Candida albicans ) 。这效果被归因于一个更弱的微生物引起的附件到极端光滑的 graphene 电影和 Ag+ 的消毒能力,它 sustainably 被免除 AgNWs 并且大概由 AgNWs 的电气化学的腐蚀提高了。而且, graphene/AgNW 涂层的柔韧的抗菌剂活动被 graphene 被 AgNW 封装增强。而且,抗菌剂效率能走水路百分之百被提高到 ~ 由把传导性的 graphene/AgNW 涂层用作阴极的电解。我们开发了用 graphene/AgNW/EVA/PET 和由 graphene/ AgNW 涂的一颗抗菌剂假牙做的一个透明、灵活的抗菌剂封面,到表演抗菌剂材料的潜在的应用程序。 | Chen Zhao Bing Deng Guanchu Chen Bo Lei Hong Hua Hailin Peng Zhimin Yan | 2016 | Nano Research2016，9，4： | 3 |
| 11 | Identifying EGFR-Expressed Cells and Detecting EGFR Multi-Mutations at Single-Cell Level by Microfluidic Chip显示文摘EGFR mutations companion diagnostics have been proved to be crucial for the efficacy of tyrosine kinase inhibitor targeted cancer therapies. To uncover multiple mutations occurred in minority of EGFR-mutated cells,which may be covered by the noises from majority of unmutated cells, is currently becoming an urgent clinical requirement. Here we present the validation of a microfluidic-chip-based method for detecting EGFR multimutations at single-cell level. By trapping and immunofluorescently imaging single cells in specifically designed silicon microwells, the EGFR-expressed cellswere easily identified. By in situ lysing single cells, the cell lysates of EGFR-expressed cells were retrieved without cross-contamination. Benefited from excluding the noise from cells without EGFR expression, the simple and cost-effective Sanger's sequencing, but not the expensive deep sequencing of the whole cell population, was used to discover multi-mutations. We verified the new method with precisely discovering three most important EGFR drugrelated mutations from a sample in which EGFR-mutated cells only account for a small percentage of whole cell population. The microfluidic chip is capable of discovering not only the existence of specific EGFR multi-mutations,but also other valuable single-cell-level information: on which specific cells the mutations occurred, or whether different mutations coexist on the same cells. This microfluidic chip constitutes a promising method to promote simple and cost-effective Sanger's sequencing to be a routine test before performing targeted cancer therapy. | Ren Li Mingxing Zhou Jine Li Zihua Wang Weikai Zhang Chunyan Yue Yan Ma Hailin Peng Zewen Wei Zhiyuan Hu | 2018 | Nano-Micro Letters2018，10，1： | 2 |
| 12 | Visualizing fast growth of large single-crystalline graphene by tunable isotopic carbon source显示文摘由 Cu 陪衬上的化学蒸汽免职的大单人赛水晶的 graphene 的快生长为工业规模的应用仍然是挑战。完成大单人赛水晶的 graphene 的快生长,理解管理全部生长 processincluding 成核,生长,和 coalescenceis 的详细动力学重要;然而,这些仍然保持未经勘探。在这研究,由使用与 micro-Raman 光谱学鉴定一起把技术标记的搏动的碳同位素,我们设想了生长动力学,例如成核,生长,和结合,在大单人赛水晶的 graphene 领域的快生长期间。由调节碳来源的供应, 320 m/min 的生长率和厘米大小的 graphene 单身者晶体的生长在 Cu 陪衬上被完成。 | Luzhao Sun1 Li Lin Jincan Zhang Huan Wang Hailin Peng Zhongfan Liu | 2017 | Nano Research2017，10，2： | 2 |
| 13 | Synthesis of Boron‐Doped Graphene Monolayers Using the Sole Solid Feedstock by Chemical Vapor Deposition显示文摘 | Huan Wang Yu Zhou Di Wu Lei Liao Shuli Zhao Hailin Peng Zhongfan Liu | 2013 | Small2013，，8： | 1 |
| 14 | High - performance lithium battery anodes using silicon nanowires nature nanotechnology 显示文摘 | I CANDACE K CHAN HAILIN PENG et at | 2007 | published online2007，，12： | 1 |
| 15 | Complex Networks Based Energy Efficient Evolution Model for Wireless Sensor Networks显示文摘 | Zhu Hailin Luo Hong Peng Haipeng | 2009 | Chaos Solitons & Fractals2009，41，430： | 1 |
| 16 | Complex networks based energy-efficient evolution model for wire- less sensor networks 显示文摘 | Zhu Hailin Luo Hong Peng Haipeng | 2009 | Chaos Solitons and Fractals2009，41，4： | 1 |
| 17 | 2D Bi_(2)O_(2)Se:An Emerging Material Platform for the Next-Generation Electronic Industry显示文摘CONSPECTUS:Silicon has been the dominant semiconductor for the microelectronics industry since the late 1950s.Following Moore’s law,silicon-based integrated circuit(IC)technology evolved into a 5 nm node by the end of 2020.However,silicon-based electronics face various challenges such as reduced carrier mobility and increased short-channel effects at sub-10 nm nodes.To overcome these drawbacks,two-dimensional(2D)semiconductors are among the most competitive candidate materials for next-generation electronics,due to their intrinsic atomic thickness,flexibility,and dangling-bond-free surfaces.Among all the 2D semiconductors,an air-stable and high-mobility 2D Bi_(2)O_(2)Se semiconductor,a novel ternary material,has some prominent advantages that make it particularly favorable in the electronics industry.First,it demonstrates ultrahigh carrier mobility,moderate band gap,outstanding stability,and excellent mechanical properties.Second,it can react with oxygen plasma or oxygen at elevated temperatures to form a high-κnative oxide Bi2SeO5.The native oxide Bi2SeO5 forms an atomically sharp interface with Bi_(2)O_(2)Se and can directly serve as a gate dielectric.Bi_(2)O_(2)Se is also embodied with some interesting physical properties such as strong spin−orbit coupling,dimerized selenium vacancies,and ferroelectricity.Taking advantage of these properties,researchers have fabricated high-performance electronic devices,including logic devices,optoelectronics,thermoelectrics,sensors,and memory devices.In this account,we will systematically review the structure of 2D Bi_(2)O_(2)Se,including its crystal structure,surface structure,point defects,and electronic band structure and how these structures can affect the electron transport in 2D Bi_(2)O_(2)Se.We will then discuss different approaches to synthesize this material including chemical vapor deposition(CVD),metal−organic chemical vapor deposition(MOCVD),molecular beam epitaxy(MBE),and the solution-assisted method.All these methods show great potential in large-scale production.Third,we will discuss how the structure of Bi_(2)O_(2)Se affects its chemical and physical properties such as chemical reactivity and ferroelectric,piezoelectric,and electromechanical properties.Fourth,we will talk about how to make use of these properties in electronic devices,including field-effect transistors,logic gates,bolometers,photodetectors,thermoelectrics,piezoelectrics,sensors,and memory devices.Finally,we will put forward our idea on how to pattern large-area Bi_(2)O_(2)Se thin films into isolated channel regions and integrate these devices together into full-functioning circuits.We believe that 2D Bi_(2)O_(2)Se is a promising semiconductor,as a great diversity of high-performance 2D Bi_(2)O_(2)Se-based devices have demonstrated.Hopefully,the unique characteristics of 2D Bi_(2)O_(2)Se can provide additional opportunities to complement or replace silicon as the material platform of the next-generation electronics industry.To fill the gap between dreams and reality,there is still much work to be done,especially in large-scale material synthesis and systematic device integration. | Tianran Li Hailin Peng | 2021 | Accounts of Materials Research2021，2，9： | 1 |
| 18 | Characteristics analysis of a novel centralized-driving flip-flow screen显示文摘 | Liping Peng Fengming Li Hailin Dong Chusheng Liu Yuemin Zhao Chenlong Duan | 2013 | International Journal of Mining Science and Technology2013，，： | 1 |
| 19 | Growth of 12-inch uniform monolayer graphene film on molten glass and its application in PbI2-based photodetector显示文摘Direct growth of large area uniform graphene on functional insulating materials is essential for engineering versatile applications of graphene. However, the existing synthesis approaches can hardly avoid the generation of non-uniform multilayer graphene along the gas flow direction, affording huge challenges for further scaling up. Herein, by exploiting the molten state of soda-lime glass, we have accomplished the direct growth of large area uniform (up to 30 cm × 6 cm) graphene via a facile chemical vapor deposition route on low cost soda-lime glass. The use of molten glass eliminates the chemically active sites (surface corrugations, scratches, defects), and improves the mobility of carbon precursors, affording uniform nucleation and growth of monolayer graphene. Intriguingly, thus-obtained graphene acts as an ideal coating layer for the surface crystallographic modification of soda-lime glass, making it epitaxy substrates for synthesizing high-quality PbI2 nanoplates and continues films. Accordingly, a prototype photodetector was fabricated to present excellent photoelectrical properties of high responsivity (~ 600 on/off current ratio) and fast response speed (18 μs). This work hereby paves ways for the batch production and the direct applications of graphene glass as platforms for constructing high performance electronic and optoelectronic devices. | Zhaolong Chen Haina Ci Zhenjun Tan Zhipeng Dou Xu-dong Chen Bingzhi Liu Ruojuan Liu Li Lin Lingzhi Cui Peng Gao Hailin Peng Yanfeng Zhang Zhongfan Liu | 2019 | Nano Research2019，12，8： | 1 |
| 20 | High-performance lithium battery anodes using silicon nanowires显示文摘 | Candace K Chan Peng Hailin Cui Yi | 2008 | Nature Nanotechn2008，，3： | 1 |
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