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| 1 | Review of gallium-oxide-based solar-blind ultraviolet photodetectors显示文摘Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide(Ga_2O_3) exhibits unique advantages over other wide-bandgap semiconductors, especially in developing high-performance solar-blind photodetectors. This paper comprehensively reviews the latest progresses of solar-blind photodetectors based on Ga_2O_3 materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys.The basic working principles of photodetectors and the fundamental properties and synthesis of Ga_2O_3, as well as device processing developments, have been briefly summarized. A special focus is to address the physical mechanism for commonly observed huge photoconductive gains. Benefitting from the rapid development in material epitaxy and device processes, Ga_2O_3-based solar-blind detectors represent to date one of the most prospective solutions for UV detection technology towards versatile applications. | XUANHU CHEN FANGFANG REN SHULIN GU JIANDONG YE | 2019 | Photonics Research2019，7，4： | 22 |
| 2 | Label-free fiber nanograting sensor for real-time in situ early monitoring of cellular apoptosis显示文摘The achievement of functional nanomodules for subcellular label-free measurement has long been pursued in order to fully understand cellular functions.Here,a compact label-free nanosensor based on a fiber taper and zinc oxide nanogratings is designed and applied for the early monitoring of apoptosis in individual living cells.Because of its nanoscale dimensions,mechanical flexibility,and minimal cytotoxicity to cells,the sensing module can be loaded in cells for long term in situ tracking with high sensitivity.A gradual increase in the nuclear refractive index during the apoptosis process is observed,revealing the increase in molecular density and the decrease in cell volume.The strategy used in our study not only contributes to the understanding of internal environmental variations during cellular apoptosis but also provides a new platform for nonfluorescent fiber devices for investigation of cellular events and understanding fundamental cell biochemical engineering. | Danran Li Nina Wang Tianyang Zhang Guangxing Wu Yifeng Xiong Qianqian Du Yunfei Tian Weiwei Zhao Jiandong Ye Shulin Gu Yanqing Lu Dechen Jiang Fei Xu | 2022 | Advanced Photonics2022，4，1： | 5 |
| 3 | Heteroepitaxial growth of thick α-Ga_2O_3 film on sapphire(0001)by MIST-CVD technique显示文摘The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire(0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-halfmaximum(FWHM) of rocking curves for the(0006) and(10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 106 and 1.63 × 109 cm-2, respectively, indicative of high single crystallinity. The out-ofplane and in-plane epitaxial relationships are [0001] α-Ga2O3//[0001] α-Al2O3 and [11-20] α-Ga2O3//[11-20] α-Al2O3, respectively.The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced compressive residual strain cannot be ruled out despite the large thickness of the α-Ga2O3 epilayer. The achieved high quality α-Ga2O3 may provide an alternative material platform for developing high performance power devices and solar-blind photodetectors. | Tongchuan Ma Xuanhu Chen Fangfang Ren Shunming Zhu Shulin Gu Rong Zhang Youdou Zheng Jiandong Ye | 2019 | Journal of Semiconductors2019，40，1： | 2 |
| 4 | The temperature dependence of optical properties of InGaN alloys显示文摘In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region.It was found that both phenomena are relative to localization effects.In addition,the degree of localization effects in three samples was investigated using the band-tail model.Our findings are presented in this paper. | ZHAO ChuanZhen ZHANG Rong LIU Bin FU DeYi CHEN Hui LI Ming XIE ZiLi XIU XiangQian GU ShuLin ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，3： | 1 |
| 5 | SeDeM Expert System: A review and new perspectives显示文摘The SeDeM Expert System was first known as a galenic pre-formulation system, which was based on the experimental research and quantitative determination of powdered substances. And the mathematical formula provided by the SeDeM Expert System has plays an important role in the study of powder properties. The system can be used not only to evaluate the powder direct compression (DC) of excipients and active pharmaceutical ingredients (API’s), but also to predict the possible formulations, so it can reduce unnecessary research and trials, and shorten the time of development. In this paper, the research development and application of SeDeM Expert System in DC was summarized, and the results showed that with a few exceptions, the system was skilled in predicting acceptable tablet formulations. Finally, the new application prospect of the system is presented, including the application of the Internet traffic and content management (iTCM) database and the new co-processed excipients. | Mingxian Gu Tianbing Guan Shulin Wan Han Zhang Xuelian Li Songtao Kong Jianbing Ren Huimin Sun Chuanyun Dai | 2019 | Journal of Pharmaceutical and Biopharmaceutical Research2019，1，1： | 1 |
| 6 | Band alignment and polarization engineering inκ-Ga_(2)O_(3)/GaN ferroelectric heterojunction显示文摘Ferroelectric-semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered functionality and improved performance.In this work,we report on the heteroepitaxial construction,band structure alignment and polarization engineering of the single-phasedκ-Ga_(2)O_(3)/GaN ferroelectric/polar heterojunction.A type-II band alignment is determined at theκ-Ga_(2)O_(3)/GaN polar hetero-interface,with a valence band offset of(1.74±0.1)eV and a conduction band offset of(0.29■0.1)eV.Besides the band edge discontinuity,charge dipoles induced by spontaneous polarization lead to the observed band bending with built-in potentials of 0.9 and 0.33 eV,respectively,at theκ-Ga_(2)O_(3)surface andκ-Ga_(2)O_(3)/GaN interface.The polarization switching properties of ferroelectricκ-Ga_(2)O_(3)are identified with a remanent polarization of approximately 2.7μC/cm^(2)via the direct hysteresis remanent polarization/voltage(P-V)loop measurement.These findings allow the rational design ofκ-Ga_(2)O_(3)ferroelectric/polar heterojunction for the application of power electronic devices,advanced memories and even ultra-low loss negative capacitance transistors. | Yanting Chen Hongkai Ning Yue Kuang Xing-Xing Yu He-He Gong Xuanhu Chen Fang-Fang Ren Shulin Gu Rong Zhang Youdou Zheng Xinran Wang Jiandong Ye | 2022 | Science China(Physics,Mechanics & Astronomy)2022，65，7： | 1 |
| 7 | Raman Spectra of Carbon Nanotubes and Their Temperature Effect显示文摘 | Zhang Shulin Gu Zhennan Huang Fumin To | 1998 | C J L S1998，10，： | 1 |
| 8 | The impact of initial growth andsubstrate nitridation on thick GaN growth on sapphire by HVPE 显示文摘 | Shulin Gu Rong Zhanga Yi Sha | 2001 | Journal of Crystal Growth2001，231，： | 1 |
| 9 | Hybrid plasmonic–dielectric metal-nanowire coupler for high-efficiency broadband nonlinear frequency conversion显示文摘Pursuing nanometer-scale nonlinear converters based on second harmonic generation(SHG)is a stimulating strategy for bio-sensing,on-chip optical circuits,and quantum information processing,but the light-conversion efficiency is still poor in such ultra-small dimensional nanostructures.Herein,we demonstrate a highly enhanced broadband frequency converter through a hybrid plasmonic–dielectric coupler,a ZnTe/ZnO single core–shell nanowire(NW)integrated with silver(Ag)nanoparticles(NPs).The NW dimension has been optimized to allow the engineering of dielectric resonances at both fundamental wave and second harmonic frequencies.Meanwhile,the localized surface plasmon resonances are excited in the regime between the Ag NPs and ZnTe/ZnO dielectric NW,as evidenced by plasmon-enhanced Raman scattering and resonant absorption.These two contributors remarkably enhance local fields and consequently support the strong broadband SHG outputs in this hybrid nanostructure by releasing stringent phase-matching conditions.The proposed nanoscale nonlinear optical converter enables the manipulation of nonlinear light–matter interactions toward the development of on-chip nanophotonic systems. | KUI-YING NIE SONG LUO FANG-FANG REN XUANHU CHEN SHULIN GU ZHANGHAI CHEN RONG ZHANG JIANDONG YE | 2022 | Photonics Research2022，10，10： | 1 |
| 10 | Mass-production of single-wall carbon nanotubes by arc discharge method 1 1 This work was supported by the National Natural Science Foundation of China, No. 29671030.显示文摘 | Zujin Shi Yongfu Lian Xihuang Zhou Zhennan Gu Yaogang Zhang Sumio Iijima Lixia Zhou Kwok To Yue Shulin Zhang | 1999 | Carbon1999，，9： | 1 |
| 11 | The growth and annealing of single crystalline ZnO films by low-pressure MOCVD显示文摘 | YE Jiandong GU Shulin ZHU Shunmin CHEN Tong HU Liqun | 2002 | Jour- nal of Crystal Growth2002，243，1： | 1 |
| 12 | Anti - static charge character of the plasma treated polyester filter fabric 显示文摘 | Ma Chongqi Zhao Shulin Huang Gu | 2010 | Journal of Electrostatics2010，68，2： | 1 |
| 13 | China's Innovation System and the Move toward Harmonious Growth and Endogenous Innovation显示文摘 | Shulin Gu and Bengt-Ake Lnndvall | 2006 | Innovation: Management Policy & Practice2006，8，12： | 1 |
| 14 | The growth and annealing of single crystalline ZnO films by low-pressure MOCVD显示文摘 | YE Jiandong GU Shulin ZHU Shunmin CHEN Tong HU Liqun | 2002 | Journal of Crystal Growth2002，243，1： | 1 |
| 15 | Simulation of a new style vertical HVPE system显示文摘In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride(GaN),we change the distance between the inlet and the substrate,GaCl and NH3 inlets,and also we add substrate rotation separately.With the increase of the distance between the substrate and the gas inlet,GaN deposition rate decreases and the uniformity becomes better.The results show that the optimal distance in this new-style vertical hydride vapour phase epitaxy(HVPE) system is 4 cm.Besides,as the distance between the GaCl inlet and the NH3 inlet changes,the uniformity of GaN deposition varies.Our findings indicate that the optimal distance is 3 cm.Furthermore,it is found that substrate rotation also affects the growth rate of GaN. | ZHOU An XIU XiangQian ZHANG Rong XIE ZiLi LIU Bin HAN Ping GU ShuLin SHI Yi ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，12： | 1 |
| 16 | Feasibility and physics potential of detecting ^(8)B solar neutrinos at JUNO显示文摘The Jiangmen Underground Neutrino Observatory(JUNO)features a 20 kt multi-purpose underground liquid scintillator sphere as its main detector.Some of JUNO's features make it an excellent location for^8B solar neutrino measurements,such as its low-energy threshold,high energy resolution compared with water Cherenkov detectors,and much larger target mass compared with previous liquid scintillator detectors.In this paper,we present a comprehensive assessment of JUNO's potential for detecting^8B solar neutrinos via the neutrino-electron elastic scattering process.A reduced 2 MeV threshold for the recoil electron energy is found to be achievable,assuming that the intrinsic radioactive background^(238)U and^(232)Th in the liquid scintillator can be controlled to 10^(-17)g/g.With ten years of data acquisition,approximately 60,000 signal and 30,000 background events are expected.This large sample will enable an examination of the distortion of the recoil electron spectrum that is dominated by the neutrino flavor transformation in the dense solar matter,which will shed new light on the inconsistency between the measured electron spectra and the predictions of the standard three-flavor neutrino oscillation framework.IfDelta m^(2)_(21)=4.8times10^(-5);(7.5times10^(-5))eV^(2),JUNO can provide evidence of neutrino oscillation in the Earth at approximately the 3sigma(2sigma)level by measuring the non-zero signal rate variation with respect to the solar zenith angle.Moreover,JUNO can simultaneously measureDelta m^2_(21)using^8B solar neutrinos to a precision of 20% or better,depending on the central value,and to sub-percent precision using reactor antineutrinos.A comparison of these two measurements from the same detector will help understand the current mild inconsistency between the value of Delta m^2_(21)reported by solar neutrino experiments and the KamLAND experiment. | Angel Abusleme Thomas Adam Shakeel Ahmad Sebastiano Aiello Muhammad Akram Nawab Ali Fengpeng An Guangpeng An Qi An Giuseppe Andronico Nikolay Anfimov Vito Antonelli Tatiana Antoshkina Burin Asavapibhop João Pedro Athayde Marcondes de André Didier Auguste Andrej Babic Wander Baldini Andrea Barresi Eric Baussan Marco Bellato Antonio Bergnoli Enrico Bernieri David Biare Thilo Birkenfeld Sylvie Blin David Blum Simon Blyth Anastasia Bolshakova Mathieu Bongrand Clément Bordereau Dominique Breton Augusto Brigatti Riccardo Brugnera Riccardo Bruno Antonio Budano Max Buesken Mario Buscemi Jose Busto Ilya Butorov Anatael Cabrera Hao Cai Xiao Cai Yanke Cai Zhiyan Cai Antonio Cammi Agustin Campeny Chuanya Cao Guofu Cao Jun Cao Rossella Caruso Cédric Cerna Jinfan Chang Yun Chang Pingping Chen Po-An Chen Shaomin Chen Shenjian Chen Xurong Chen Yi-Wen Chen Yixue Chen Yu Chen Zhang Chen Jie Cheng Yaping Cheng Alexander Chepurnov Davide Chiesa Pietro Chimenti Artem Chukanov Anna Chuvashova Gérard Claverie Catia Clementi Barbara Clerbaux Selma Conforti Di Lorenzo Daniele Corti Salvatore Costa Flavio Dal Corso Christophe De La Taille Jiawei Deng Zhi Deng Ziyan Deng Wilfried Depnering Marco Diaz Xuefeng Ding Yayun Ding Bayu Dirgantara Sergey Dmitrievsky Tadeas Dohnal Georgy Donchenko Jianmeng Dong Damien Dornic Evgeny Doroshkevich Marcos Dracos Frédéric Druillole Shuxian Du Stefano Dusini Martin Dvorak Timo Enqvist Heike Enzmann Andrea Fabbri Lukas Fajt Donghua Fan Lei Fan Can Fang Jian Fang Marco Fargetta Anna Fatkina Dmitry Fedoseev Vladko Fekete Li-Cheng Feng Qichun Feng Richard Ford Andrey Formozov Amélie Fournier Haonan Gan Feng Gao Alberto Garfagnini Alexandre Göttel Christoph Genster Marco Giammarchi Agnese Giaz Nunzio Giudice Franco Giuliani Maxim Gonchar Guanghua Gong Hui Gong Oleg Gorchakov Yuri Gornushkin Marco Grassi Christian Grewing Maxim Gromov Vasily Gromov Minghao Gu Xiaofei Gu Yu Gu Mengyun Guan Nunzio Guardone Maria Gul Cong Guo Jingyuan Guo Wanlei Guo Xinheng Guo Yuhang Guo Paul Hackspacher Caren Hagner Ran Han Yang Han Miao He Wei He Tobias Heinz Patrick Hellmuth Yuekun Heng Rafael Herrera Daojin Hong YuenKeung Hor Shaojing Hou Yee Hsiung Bei-Zhen Hu Hang Hu Jianrun Hu Jun Hu Shouyang Hu Tao Hu Zhuojun Hu Chunhao Huang Guihong Huang Hanxiong Huang Qinhua Huang Wenhao Huang Xingtao Huang Yongbo Huang Jiaqi Hui Wenju Huo Cédric Huss Safeer Hussain Antonio Insolia Ara Ioannisian Daniel Ioannisyan Roberto Isocrate Kuo-Lun Jen Xiaolu Ji Xingzhao Ji Huihui Jia Junji Jia Siyu Jian Di Jiang Xiaoshan Jiang Ruyi Jin Xiaoping Jing Cécile Jollet Jari Joutsenvaara Sirichok Jungthawan Leonidas Kalousis Philipp Kampmann Li Kang Michael Karagounis Narine Kazarian Amir Khan Waseem Khan Khanchai Khosonthongkee Patrick Kinz Denis Korablev Konstantin Kouzakov Alexey Krasnoperov Svetlana Krokhaleva Zinovy Krumshteyn Andre Kruth Nikolay Kutovskiy Pasi Kuusiniemi Tobias Lachenmaier Cecilia Landini Sébastien Leblanc Frederic Lefevre Liping Lei Ruiting Lei Rupert Leitner Jason Leung Demin Li Fei Li Fule Li Haitao Li Huiling Li Jiaqi Li Jin Li Kaijie Li Mengzhao Li Nan Li Nan Li Qingjiang Li Ruhui Li Shanfeng Li Shuaijie Li Tao Li Weidong Li Weiguo Li Xiaomei Li Xiaonan Li Xinglong Li Yi Li Yufeng Li Zhibing Li Ziyuan Li Hao Liang Hao Liang Jingjing Liang Jiajun Liao Daniel Liebau Ayut Limphirat Sukit Limpijumnong Guey-Lin Lin Shengxin Lin Tao Lin Jiajie Ling Ivano Lippi Fang Liu Haidong Liu Hongbang Liu Hongjuan Liu Hongtao Liu Hu Liu Hui Liu Jianglai Liu Jinchang Liu Min Liu Qian Liu Qin Liu Runxuan Liu Shuangyu Liu Shubin Liu Shulin Liu Xiaowei Liu Yan Liu Alexey Lokhov Paolo Lombardi Claudio Lombardo Kai Loo Chuan Lu Haoqi Lu Jingbin Lu Junguang Lu Shuxiang Lu Xiaoxu Lu Bayarto Lubsandorzhiev Sultim Lubsandorzhiev Livia Ludhova Fengjiao Luo Guang Luo Pengwei Luo Shu Luo Wuming Luo Vladimir Lyashuk Qiumei Ma Si Ma Xiaoyan Ma Xubo Ma Jihane Maalmi Yury Malyshkin Fabio Mantovani Francesco Manzali Xin Mao Yajun Mao Stefano MMari Filippo Marini Sadia Marium Cristina Martellini Gisele Martin-Chassard Agnese Martini Davit Mayilyan Axel Müller Ints Mednieks Yue Meng Anselmo Meregaglia Emanuela Meroni David Meyhöfer Mauro Mezzetto Jonathan Miller Lino Miramonti Salvatore Monforte Paolo Montini Michele Montuschi Nikolay Morozov Pavithra Muralidharan Massimiliano Nastasi Dmitry VNaumov Elena Naumova Igor Nemchenok Alexey Nikolaev Feipeng Ning Zhe Ning Hiroshi Nunokawa Lothar Oberauer Juan Pedro Ochoa-Ricoux Alexander Olshevskiy Domizia Orestano Fausto Ortica Hsiao-Ru Pan Alessandro Paoloni Nina Parkalian Sergio Parmeggiano Teerapat Payupol Yatian Pei Nicomede Pelliccia Anguo Peng Haiping Peng Frédéric Perrot Pierre-Alexandre Petitjean Fabrizio Petrucci Luis Felipe Piñeres Rico Oliver Pilarczyk Artyom Popov Pascal Poussot Wathan Pratumwan Ezio Previtali Fazhi Qi Ming Qi Sen Qian Xiaohui Qian Hao Qiao Zhonghua Qin Shoukang Qiu Muhammad Rajput Gioacchino Ranucci Neill Raper Alessandra Re Henning Rebber Abdel Rebii Bin Ren Jie Ren Taras Rezinko Barbara Ricci Markus Robens Mathieu Roche Narongkiat Rodphai Aldo Romani Bedřich Roskovec Christian Roth Xiangdong Ruan Xichao Ruan Saroj Rujirawat Arseniy Rybnikov Andrey Sadovsky Paolo Saggese Giuseppe Salamanna Simone Sanfilippo Anut Sangka Nuanwan Sanguansak Utane Sawangwit Julia Sawatzki Fatma Sawy Michaela Schever Jacky Schuler Cédric Schwab Konstantin Schweizer Dmitry Selivanov Alexandr Selyunin Andrea Serafini Giulio Settanta Mariangela Settimo Muhammad Shahzad Vladislav Sharov Gang Shi Jingyan Shi Yongjiu Shi Vitaly Shutov Andrey Sidorenkov FedorŠimkovic Chiara Sirignano Jaruchit Siripak Monica Sisti Maciej Slupecki Mikhail Smirnov Oleg Smirnov Thiago Sogo-Bezerra Julanan Songwadhana Boonrucksar Soonthornthum Albert Sotnikov Ondrej Sramek Warintorn Sreethawong Achim Stahl Luca Stanco Konstantin Stankevich DušanŠtefánik Hans Steiger Jochen Steinmann Tobias Sterr Matthias Raphael Stock Virginia Strati Alexander Studenikin Gongxing Sun Shifeng Sun Xilei Sun Yongjie Sun Yongzhao Sun Narumon Suwonjandee Michal Szelezniak Jian Tang Qiang Tang Quan Tang Xiao Tang Alexander Tietzsch Igor Tkachev Tomas Tmej Konstantin Treskov Andrea Triossi Giancarlo Troni Wladyslaw Trzaska Cristina Tuve Stefan van Waasen Johannes van den Boom Guillaume Vanroyen Nikolaos Vassilopoulos Vadim Vedin Giuseppe Verde Maxim Vialkov Benoit Viaud Cristina Volpe Vit Vorobel Lucia Votano Pablo Walker Caishen Wang Chung-Hsiang Wang En Wang Guoli Wang Jian Wang Jun Wang Kunyu Wang Lu Wang Meifen Wang Meng Wang Ruiguang Wang Siguang Wang Wei Wang Wenshuai Wang Xi Wang Xiangyue Wang Yangfu Wang Yaoguang Wang Yi Wang Yifang Wang Yuanqing Wang Yuman Wang Zhe Wang Zheng Wang Zhimin Wang Zongyi Wang Apimook Watcharangkool Lianghong Wei Wei Wei Yadong Wei Liangjian Wen Christopher Wiebusch Steven Chan-Fai Wong Bjoern Wonsak Diru Wu Fangliang Wu Qun Wu Wenjie Wu Zhi Wu Michael Wurm Jacques Wurtz Christian Wysotzki Yufei Xi Dongmei Xia Yuguang Xie Zhangquan Xie Zhizhong Xing Benda Xu Donglian Xu Fanrong Xu Jilei Xu Jing Xu Meihang Xu Yin Xu Yu Xu Baojun Yan Xiongbo Yan Yupeng Yan Anbo Yang Changgen Yang Huan Yang Jie Yang Lei Yang Xiaoyu Yang Yifan Yang Haifeng Yao Zafar Yasin Jiaxuan Ye Mei Ye Ugur Yegin Frédéric Yermia Peihuai Yi Xiangwei Yin Zhengyun You Boxiang Yu Chiye Yu Chunxu Yu Hongzhao Yu Miao Yu Xianghui Yu Zeyuan Yu Chengzhuo Yuan Ying Yuan Zhenxiong Yuan Ziyi Yuan Baobiao Yue Noman Zafar Andre Zambanini Pan Zeng Shan Zeng Tingxuan Zeng Yuda Zeng Liang Zhan Feiyang Zhang Guoqing Zhang Haiqiong Zhang Honghao Zhang Jiawen Zhang Jie Zhang Jingbo Zhang Peng Zhang Qingmin Zhang Shiqi Zhang Tao Zhang Xiaomei Zhang Xuantong Zhang Yan Zhang Yinhong Zhang Yiyu Zhang Yongpeng Zhang Yuanyuan Zhang Yumei Zhang Zhenyu Zhang Zhijian Zhang Fengyi Zhao Jie Zhao Rong Zhao Shujun Zhao Tianchi Zhao Dongqin Zheng Hua Zheng Minshan Zheng Yangheng Zheng Weirong Zhong Jing Zhou Li Zhou Nan Zhou Shun Zhou Xiang Zhou Jiang Zhu Kejun Zhu Honglin Zhuang Liang Zong Jiaheng Zou | 2021 | Chinese Physics C2021，45，2： | 0 |
| 17 | The growth temperatures dependence of optical and electrical properties of InN films显示文摘InN films grown on sapphire at different substrate temperatures from 550℃ to 700℃ by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100℃) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600℃. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films,which also indicates strong growth temperature dependence. The InN films grown at temperature of 600℃ show not only a high mobility with low carrier concentration,but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600℃,the Hall mobility achieves up to 938 cm2/Vs with electron concen-tration of 3.9×1018 cm-3. | LIU Bin ZHANG Rong XIE ZiLi XIU XiangQian LI Liang KONG JieYing YU HuiQiang HAN Pin GU ShuLin SHI Yi ZHENG YouDou TANG ChenGuang CHEN YongHai WANG ZhanGuo | 2008 | Science China(Physics,Mechanics & Astronomy)2008，51，3： | 0 |
| 18 | Carrier transport and luminescence properties of n-type GaN显示文摘The surface morphology,electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH4 doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×1016 cm-3 to 5.4×1018 cm-3. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH4 increases,which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV,which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping. | ZHANG Zeng ZHANG Rong XIE ZiLi LIU Bin XIU XiangQian JIANG RuoLian HAN Ping GU ShuLin SHI Yi ZHENG YouDou | 2008 | Science China(Physics,Mechanics & Astronomy)2008，51，8： | 0 |
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