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您的检索式：作者名="Niefeng Sun"
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| 1 | Characterization of defects and whole wafer unifor- mity of annealed undoped semi-insulating InP wafers 显示文摘 | ZHAO YOUWEN SUN NIEFENG DONG HONGWEI | 2002 | Materials Scie- nce and Engineering2002，，9192： | 1 |
| 2 | H - vacancy complex VInH4 abundance and its influences in n - type LEC InP显示文摘 | Sun Fung Zhao Youwen Sun Niefeng | 2000 | Journal of crystal growth2000，211，： | 1 |
| 3 | Si-based InGaAs photodetectors on heterogeneous integrated substrate显示文摘In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate.The photo responsivities of both devices measured at 1.55μm are comparable,which are about 0.808-0.828 A W^(-1).Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K,the peak detectivities of both PDs are comparable.In general,the overall performance of the InPOI-based PD is comparable to the InP-based PD,demonstrating that the ion-slicing technology is a promising route to enable the highquality Si-based InP platform for the full photonic integration on a Si substrate. | Chaodan Chi Jiajie Lin Xingyou Chen Chengli Wang Ziping Li Liping Zhang Zhanglong Fu Xiaomeng Zhao Hua Li Tiangui You Li Yue Jiaxiang Zhang Niefeng Sun Peng Gao Robert Kudrawiec Shumin Wang Xin Ou | 2021 | Science China(Physics,Mechanics & Astronomy)2021，64，6： | 0 |
| 4 | InP Bulk Crystals Grown from Various Stoichiometric Melt显示文摘InP crystal was grown from stoichiometric or non-stoichiometric melt, including P-rich and In-rich condition by the P-injection synthesis LEC method. Owing to the non-stoichiometric condition, there are many pores in the tail of the P-rich ingot. Samples were characterized by high speed photoluminescence mapping and E.P.D. mapping. The perfection (dislocation, stoichiometry and uniformity) of these samples were studied and compared. The PL peak intensity standard deviation of the 4-inch InP wafer is higher. The EPDs around the pores are higher than the other regions. Besides the stress releasing, the pores and the high concentration of dislocations around them are the leading factors causing the inhomogeneity of the wafer. By adjusting the thermal field and ensuring the chemical stoichiometry, InP crystals of larger diameters and better performance can be developed. | Wu Xiang Mao Luhong Sun Niefeng Zhao Zhengping Zhou Xiaolong Sun Tongnian | 2006 | Journal of Rare Earths2006，24，z1： | 0 |
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