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您的检索式：作者名="Chaodan Chi"
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| 1 | Si-based InGaAs photodetectors on heterogeneous integrated substrate显示文摘In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate.The photo responsivities of both devices measured at 1.55μm are comparable,which are about 0.808-0.828 A W^(-1).Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K,the peak detectivities of both PDs are comparable.In general,the overall performance of the InPOI-based PD is comparable to the InP-based PD,demonstrating that the ion-slicing technology is a promising route to enable the highquality Si-based InP platform for the full photonic integration on a Si substrate. | Chaodan Chi Jiajie Lin Xingyou Chen Chengli Wang Ziping Li Liping Zhang Zhanglong Fu Xiaomeng Zhao Hua Li Tiangui You Li Yue Jiaxiang Zhang Niefeng Sun Peng Gao Robert Kudrawiec Shumin Wang Xin Ou | 2021 | Science China(Physics,Mechanics & Astronomy)2021，64，6： | 0 |
| 2 | Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces显示文摘Heterogeneous integration of InP and GaS b on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices.In this study,2-inch 180-nm-thick InP and 185-nmthick GaS b thin layers were successfully transferred onto the Si substrates to form high-quality and ultrasmooth InP/Si and GaS b/Si templates using molecular beam epitaxy(MBE)and the ion-slicing technique together with selective chemical etching.The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaS b thin films.The sacrificial layers were completely etched off by selective chemical etching,leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaS b/Si template,respectively.Thus,the chemical mechanical polishing(CMP)process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates.Furthermore,the donor substrate is not consumed and can be recycled to reduce the cost,which provides a paradigm for the sustainable and economic development of the Si integration platform. | Tingting JIN Jiajie LIN Tiangui YOU Xiaolei ZHANG Hao LIANG Yifan ZHU Jialiang SUN Hangning SHI Chaodan CHI Min ZHOU Robert KUDRAWIEC Shumin WANG Xin OU | 2022 | Science China(Information Sciences)2022，65，8： | 0 |
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