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| 1 | Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy显示文摘The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials. | FANG HeNan ZHANG Rong LIU Bin LI YeCao FU DeYi LI Yi XIE ZiLi ZHUANG Zhe ZHENG YouDou WU JingBo JIN BiaoBing CHEN Jian WU PeiHeng | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，11： | 6 |
| 2 | Ship collision impact on the structural load of an offshore wind turbine显示文摘When a maintenance and operations ship is berthing,there is a chance the ship may collide into the wind turbine.When these ships collide into wind turbine structures,this can result in significant changes to the foundation and structure of the wind turbine.In this paper,the structural load of a 4 MW offshore wind turbine was analyzed during a collision with an operations and maintenance ship.The variations in the wind speeds on hub height,waves,and the sea currents were measured.The dynamic simulation of the wind turbine was carried out using the test data as the input parameters.As a result,the load condition of the turbine without a collision was obtained.Finally,the measured turbine load was compared with the simulation results.This study shows that the collision of the operation and the maintenance ship increases the bending moments at the tower’s bottom and the blade’s roots. | Haikun Jia Shiyao Qin Ruiming Wang Yang Xue Deyi Fu Anqing Wang | 2020 | Global Energy Interconnection2020，3，1： | 4 |
| 3 | The temperature dependence of optical properties of InGaN alloys显示文摘In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region.It was found that both phenomena are relative to localization effects.In addition,the degree of localization effects in three samples was investigated using the band-tail model.Our findings are presented in this paper. | ZHAO ChuanZhen ZHANG Rong LIU Bin FU DeYi CHEN Hui LI Ming XIE ZiLi XIU XiangQian GU ShuLin ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，3： | 1 |
| 4 | A modified simplified coherent potential approximation model of band gap energy of III-V ternary alloys显示文摘Based on the modification of the simplified coherent potential approximation(SCPA),a model is developed to calculate the composition dependence of the band gap energy of III-V ternary alloys with the same anion.The derived equation is used to fit the experimental band gap energy of In x Al 1 x N,In x Ga 1 x N and Al x Ga 1 x N with x from 0 to 1.It is found that the fitting results are better than those done by using SCPA.The fitting results are also better than those obtained by using the formula with a small bowing coefficient,especially for In x Al 1 x N.In addition,our model can also be used to describe the composition dependence of band gap energy of other III-V ternary alloys. | Zhao ChuanZhen Zhang Rong Liu Bin Fu DeYi Li Ming Xiu XiangQian Xie ZiLi Zheng YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，3： | 1 |
| 5 | Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films 显示文摘 | Fu Deyi Liu Kai Tao Tao | 2013 | Journal of Applied Physics2013，113，4： | 1 |
| 6 | Cloud manufacturing based on cooperative concept of SDN 显示文摘 | Tai Deyi Fu Yuanxu | 2012 | Advanced Materials Research2012，，2： | 1 |
| 7 | Powerful, Multifunctional Torsional Micromuscles Activated by Phase Transition显示文摘 | Kai Liu Chun Cheng Joonki Suh Robert Tang‐Kong Deyi Fu Sangwook Lee Jian Zhou Leon O. Chua Junqiao Wu | 2014 | Adv. Mater2014，，11： | 1 |
| 8 | ATIP/ATIP1 regulates prostate cancer metastasis through mitochondrial dynamic-dependent signaling显示文摘Mitochondria play a fundamental role in cell survival and motility.Abnormalities in mitochondria are associated with carcinogenesis,especially with tumor metastasis.In this study,we explore the biological function of ATiP1,which is a mitochondrial-located isoform of angiotensin Il AT2 receptor interacting proteins(ATIPs)in prostate cancer cells.The results showed that ATiP is downregulated in prostate cancer tissues and is negatively correlated with the disease-free survival rate of prostate cancer patients.Silencing of ATIP promotes mitochondrial fission and enhances tumor cell migration and invasion.Reconstitution of ATIP1 in ATiP-deficient cells significantly attenuates mitochondrial trafficking and tumor cell movement.Therefore,ATiP1 is a negative regulator of mitochondrial dynamics and tumor cell motility and is also a potential biomarker for predicting prostate cancer malignancy. | Haokun Yuan Ruiqin Fang Chi Fu Shuo Wang Xiaoqin Tong Deyi Feng Xiaoqing Wei Xirong Hu Yuan Wang | 2024 | Acta Biochimica et Biophysica Sinica2024，56，2： | 0 |
| 9 | The growth and properties of an m-plane InN epilayer on LiAlO_2 (100) by metal-organic chemical vapor deposition显示文摘The m-plane InN (1100) epilayers have been grown on a LiAlO2 (100) substrate by a two-step growth method using a metal-organic chemical vapor deposition (MOCVD) system. The low temperature InN buffer layer (LT-InN) is introduced to overcome the drawbacks of thermal instability of LiAlO2 (LAO) and to relieve the strains due to a large thermal mismatch between LAO and InN. Then the high temperature m-plane InN (1100) epilayers (HT-InN) were grown. The results of X-ray diffraction (XRD) suggest that the m-plane InN (1100) epilayer is a single crystal. The X-ray rocking curves (scans) (XRC) and atomic force microscopy (AFM) indicate that the m-plane InN (1100) epilayer has anisotropic crystallographic properties. The PL studies of the materials reveal a remarkable energy band gap structure around 0.70 eV at 15 K. | XIE ZiLi ZHANG Rong FU DeYi LIU Bin XIU XiangQian HUA XueMei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，7： | 0 |
| 10 | Supporting Various Top-k Queries over Uncertain Datasets显示文摘There have been many researches and semantics in answering top-k queries on uncertain data in various applications. However, most of these semantics must consume much of their time in computing position probability. Our approach to support various top-k queries is based on position probability distribution(PPD) sharing. In this paper, a PPD-tree structure and several basic operations on it are proposed to support various top-k queries. In addition, we proposed an approximation method to improve the efficiency of PPD generation. We also verify the effectiveness and efficiency of our approach by both theoretical analysis and experiments. | LI Wenfeng FU Zufa WANG Liwei LI Deyi PENG Zhiyong | 2014 | Wuhan University Journal of Natural Sciences2014，19，1： | 0 |
| 11 | A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics显示文摘A 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor(UMOSFET)with semi-super-junction shiel-ded structure(SS-UMOS)is proposed and compared with conventional trench MOSFET(CT-UMOS)in this work.The advantage of the proposed structure is given by comprehensive study of the mechanism of the local semi-super-junction structure at the bottom of the trench MOSFET.In particular,the influence of the bias condition of the p-pillar at the bottom of the trench on the static and dynamic performances of the device is compared and revealed.The on-resistance of SS-UMOS with grounded(G)and ungrounded(NG)p-pillar is reduced by 52%(G)and 71%(NG)compared to CT-UMOS,respectively.Additionally,gate ox-ide in the GSS-UMOS is fully protected by the p-shield layer as well as semi-super-junction structure under the trench and p-base regions.Thus,a reduced electric-field of 2 MV/cm can be achieved at the corner of the p-shield layer.However,the quasi-intrinsic protective layer cannot be formed in NGSS-UMOS due to the charge storage effect in the floating p-pillar,resulting in a large electric field of 2.7 MV/cm at the gate oxide layer.Moreover,the total switching loss of GSS-UMOS is 1.95 mJ/cm2 and is reduced by 18%compared with CT-UMOS.On the contrary,the NGSS-UMOS has the slowest overall switching speed due to the weakened shielding effect of the p-pillar and the largest gate-to-drain capacitance among the three.The proposed GSS-UMOS plays an important role in high-voltage and high-frequency applications,and will provide a valuable idea for device design and circuit applications. | Xiaojie Wang Zhanwei Shen Guoliang Zhang Yuyang Miao Tiange Li Xiaogang Zhu Jiafa Cai Rongdun Hong Xiaping Chen Dingqu Lin Shaoxiong Wu Yuning Zhang Deyi Fu Zhengyun Wu Feng Zhang | 2022 | Journal of Semiconductors2022，43，12： | 0 |
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