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1篇 您的检索式：作者名="Dingqu Lin"

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		题名	作者	年代	出处	被引量
	1	A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics显示文摘A 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor(UMOSFET)with semi-super-junction shiel-ded structure(SS-UMOS)is proposed and compared with conventional trench MOSFET(CT-UMOS)in this work.The advantage of the proposed structure is given by comprehensive study of the mechanism of the local semi-super-junction structure at the bottom of the trench MOSFET.In particular,the influence of the bias condition of the p-pillar at the bottom of the trench on the static and dynamic performances of the device is compared and revealed.The on-resistance of SS-UMOS with grounded(G)and ungrounded(NG)p-pillar is reduced by 52%(G)and 71%(NG)compared to CT-UMOS,respectively.Additionally,gate ox-ide in the GSS-UMOS is fully protected by the p-shield layer as well as semi-super-junction structure under the trench and p-base regions.Thus,a reduced electric-field of 2 MV/cm can be achieved at the corner of the p-shield layer.However,the quasi-intrinsic protective layer cannot be formed in NGSS-UMOS due to the charge storage effect in the floating p-pillar,resulting in a large electric field of 2.7 MV/cm at the gate oxide layer.Moreover,the total switching loss of GSS-UMOS is 1.95 mJ/cm2 and is reduced by 18%compared with CT-UMOS.On the contrary,the NGSS-UMOS has the slowest overall switching speed due to the weakened shielding effect of the p-pillar and the largest gate-to-drain capacitance among the three.The proposed GSS-UMOS plays an important role in high-voltage and high-frequency applications,and will provide a valuable idea for device design and circuit applications.	Xiaojie Wang Zhanwei Shen Guoliang Zhang Yuyang Miao Tiange Li Xiaogang Zhu Jiafa Cai Rongdun Hong Xiaping Chen Dingqu Lin Shaoxiong Wu Yuning Zhang Deyi Fu Zhengyun Wu Feng Zhang	2022	Journal of Semiconductors2022，43，12：	0

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