| 19 | Enhanced thermal emission from metal-free,fully epitaxial structures with epsilon-near-zero InAs layers显示文摘We introduce a novel method to create mid-infrared(MIR)thermal emitters using fully epitaxial,metal-free structures.Through the strategic use of epsilon-near-zero(ENZ)thin films in InAs layers,we achieve a narrow-band,wide-angle,and p-polarized thermal emission spectra.This approach,employing molecular beam epitaxy,circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths.Our findings contribute a promising route towards simpler,more efficient MIR optoelectronic devices. | Karolis Stašys Andrejus Geižutis Jan Devenson | 2024 | Journal of Semiconductors2024，45，2： | 0 |
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