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| 1 | Discovery of the migrasome, an organelle mediating release of cytoplasmic contents during cell migration显示文摘房间通过 secreting 和释放蛋白质和泡与对方一起交流。许多房间能移居。在这研究,我们报导 migracytosis,为释放细胞的内容的房间迁居依赖者机制,和 migrasomes 的发现,调停的小囊的结构 migracytosis。当移居的房间移动,他们离开长管状的海滨,叫的收回纤维,在他们后面。大泡,包含众多的更小的泡,在收回纤维的尖端和交叉上成长。这些纤维,与主要房间身体连接泡,最后,裂缝,和泡被释放直到细胞外的空间或直接由包围房间收起。因为这些泡的形成是迁居依赖者,我们把他们称为 “ migrasomes”。我们也发现 cytosolic 内容能被搬运进 migrasomes 并且通过 migrasomes 免除了房间。我们把这迁居依赖者版本机制称为 “ migracytosis”。 | Liang Ma Ying Li Junya Peng Danni Wu Xiaoxin Zhao Yitong Cui Lilian Chen Xiaojun Yan Yanan Du Li Yu | 2015 | Cell Research2015，25，1： | 21 |
| 2 | Atg5 regulates late endosome and lysosome biogenesis显示文摘Autophagy is an evolutionarily conserved lysosome-based degradation process.Atg5 plays a very important role in autophagosome formation.Here we show that Atg5 is required for biogenesis of late endosomes and lysosomes in an autophagy-independent manner.In Atg5 cells,but not in other essential autophagy genes defecting cells,recycling and retrieval of late endosomal components from hybrid organelles are impaired,causing persistent hybrid organelles and defective formation of late endosomes and lysosomes.Defective retrieval of late endosomal components from hybrid organelles resulting from impaired recruitment of a component of V1-ATPase to acidic organelles blocks the pH-dependent retrieval of late endosomal components from hybrid organelles.Lowering the intracellular pH restores late endosome/lysosome biogenesis in Atg5 cells.Our data demonstrate an unexpected role of Atg5 and shed new light on late endosome and lysosome biogenesis. | PENG JunYa ZHANG Ran CUI YiTong LIU HaoDong ZHAO XiaoXin HUANG Lei HU MingXu YUAN XiaoXi MA BenYu MA XiaoWei TAKASHI Ueno MASAAKI Komatsu LIANG XingJie YU Li | 2014 | Science China(Life Sciences)2014，57，1： | 6 |
| 3 | Advancement in separation materials for blood purification therapy显示文摘Blood purification refers to the extra corporeal therapies of removing potentially toxic substances, in which blood is circulated through an adsorption system loading separation materials. High-efficient inexpensive separation materials are critical to success. In this review, separation materials such as polymers and nanomaterials are summarized and compared. Combining the advantages of the adsorptive membranes and nanomaterials, organic–inorganic hybrid/blend membranes have been developed explosively. These hybrid/blend membranes have both the characteristics of high permeability, easy fabrication, good biocompatibility of adsorptive membranes, and characteristics of fast adsorption rate and high adsorption capacity of nanomaterials. The preparation and modification methodology of the separation materials is reviewed. For affinity separation materials, the relationship of ligand chemistry, ligand density and pores of the matrix is discussed. This paper also summarizes some interesting applications in separation materials for removal of bilirubin, endotoxin, toxic metal ions, cytokine, etc. | Jia Ju Feixue Liang Xiaoxin Zhang Ran Sun Xiaoguang Pan Xiaoyun Guan Guanning Cui Xuan He Mengyan Li | 2019 | Chinese Journal of Chemical Engineering2019，27，6： | 5 |
| 4 | Low power adiabatic logic based on FinFETs显示文摘With the aggressive scaling of device technology,the leakage power has become the main part of power consumption,which seriously reduces the energy recovery efciency of adiabatic logic.In this paper,a novel low-power adiabatic logic based on FinFET devices has been proposed.Due to the lower leakage current,higher on-state current and design flexibility of FinFETs,the proposed adiabatic logic shows considerable power reduction,performance improvement and area saving compared with CMOS adiabatic logic.An 8-state clock chain as the test circuit has been demonstrated based on the 32-nm FinFET Predictive Technology Model.The simulation results show that adiabatic circuit based on FinFET devices achieves a power reduction of up to84.8%and a limiting frequency of up to 55 GHz. | LIAO Nan CUI XiaoXin LIAO Kai MA KaiSheng WU Di WEI Wei LI Rui YU DunShan | 2014 | Science China(Information Sciences)2014，57，2： | 2 |
| 5 | Ultra-low power dissipation of improved complementary pass-transistor adiabatic logic circuits based on FinFETs显示文摘With the technology scaling down,low power dissipation has become one of the research focuses in the field of integrated circuit design.Various types of adiabatic logics have been invented for low-power applications.However,the expanding leakage current degrades the performance of conventional adiabatic logics.In this article,a novel improved complementary pass-transistor adiabatic logic(ICPAL)based on fin-type fieldeffect transistor(FinFET)devices with ultra-low power dissipation has been presented.The proposed ICPAL takes full advantage of different FinFET operating modes,that is,shorted-gate mode,independent-gate mode,and low-power mode,to make a tremendous reduction in power dissipation.For explication and verification,the power dissipation of different ICPAL standard cells has been investigated and compared with other types of adiabatic circuits based on FinFETs.The results show that the ICPAL circuits have ultra-low power dissipation in a wide range of clock frequencies(30-800 MHz)under the condition of similar number of transistors,and the average reduction in power dissipation is about 23.1%,75.0%,and 50.0%relative to 2N-2N2P,improved passtransistor adiabatic logic,and complimentary pass-transistor adiabatic logic,respectively.Furthermore,ICPAL supports a better pre-evaluation of system power dissipation in VLSI design and has an intrinsic characteristic for the resistance to some types of side channel attacks. | LIAO Kai CUI XiaoXin LIAO Nan MA KaiSheng WU Di WEI Wei LI Rui YU DunShan | 2014 | Science China(Information Sciences)2014，57，4： | 2 |
| 6 | Improving DFA attacks on AES with unknown and random faults显示文摘Differential fault analysis(DFA) aiming at the advanced encryption standard(AES) hardware implementations has become a widely research topic. Unlike theoretical model, in real attack scenarios, popular and practical fault injection methods like supply voltage variation will introduce faults with random locations,unknown values and multibyte. For analyzing this kind of faults, the previous fault model needed six pairs of correct and faulty ciphertexts to recover the secret round-key. In this paper, on the premise of accuracy, a more efficient DFA attack with unknown and random faults is proposed. We introduce the concept of theoretical candidate number in the fault analysis. Based on this concept, the correct round-key can be identified in advance, so the proposed attack method can always use the least pairs of correct and faulty ciphertexts to accomplish the DFA attacks. To further support our opinion, random fault attacks based on voltage violation were taken on an FPGA board. Experiment results showed that about 97.3% of the attacks can be completed within 3 pairs of correct and faulty ciphertexts. Moreover, on average only 2.17 pairs of correct and faulty ciphertexts were needed to find out the correct round-key, showing significant advantage of efficiency compared with previous fault models. On the other hand, less amount of computation in the analyses can be realized with a high probability with our model, which also effectively improves the time efficiency in DFA attacks with unknown and random faults. | Nan LIAO Xiaoxin CUI Kai LIAO Tian WANG Dunshan YU Xiaole CUI | 2017 | Science China(Information Sciences)2017，60，4： | 2 |
| 7 | Key characterization factors of accurate power modeling for Fin FET circuits显示文摘Due to its excellent device features, manufacture process compatibility and diversity of the circuit structures, The Fin FET is considered appropriate candidate for the conventional bulk-MOSFET in sub-22 nm technology nodes. However, the power estimation CAD tools for Fin FET are missing at the moment, which mainly results from the absence of Fin FET power analysis and Fin FET power model. Three key factors for Fin FET power model are: the dimension of the look-up-tables, that to find out the most significant factors that influence Fin FET power and to make them as indexes for the look-up-tables; the distance between sampling points; and the interpolation method. In this paper, various factors that may contribute to the Fin FET power consumption are evaluated. Of all the factors, the continuous ones are compared with sensitivity method. As to other discrete factors, methods of building them in power model are given according to the features of the each factor and the way it influences the power. Based on the simulation result, standard cell power library model for Fin FET is proposed. The research work lays foundation for accurate power analysis and modeling for high-level power analysis of Fin FET circuits. Besides, these key factors are also crucial for low-power Fin FET circuit design. | MA KaiSheng CUI XiaoXin LIAO Kai LIAO Nan WU Di YU DunShan | 2015 | Science China(Information Sciences)2015，58，2： | 2 |
| 8 | Improved jet flushing for EDM 显示文摘 | Masuzawa T Cui Xiaoxin Taniguchi N | 1992 | CIRP Annals-Manufacturing Tech- nology1992，41，1： | 1 |
| 9 | Improved Jet Flushing for EDM显示文摘 | Masuzawa Takahisa CUI Xiaoxin Taniguchi Nobuyu- ki | 1992 | CIRP Annals-- Manufacturing Technology1992，41，1： | 1 |
| 10 | Rational construction of multiple hollow silicalite-1 zeolite with enhanced quasi acidity for robust vapor-phase Beckmann rearrangement显示文摘Developing efficient and stable zeolites for vapor-phase Beckmann rearrangement of cyclohexanone oxime is still a great challenge to realizeε-caprolactam(CPL)green production.In this work,the hierarchical porous silicalite-1 zeolites with multiple hollow structure(S-1-M)are explored by in-situ desilication−recrystallization post-treatment of spongy highway-like zeolites(S-1-S),which are synthesized through silanization synthesis of conventional bulky silicalite-1(S-1).Compared to S-1,S-1-M achieves superior catalytic performance,with improving the CPL selectivity from 85.7%to 94.1%and prolonging the catalyst lifetime from 74 to 126 h at a weight hourly space velocity(WHSV)of 6 h^(−1).Comprehensive physiochemical studies demonstrate that the highly dispersed intracrystalline cavities within S-1-M endow greater mass diffusion and better quasi acidity inducing by the enhanced H-bonds among abundant H-bonded silanols,which is cooperatively responsible for its superior catalytic performance. | Peng Zhang Xianfeng Yi Changjiu Xia Xinxin Peng Shuai Zhang Chengxiang Li Anmin Zheng Xiaoxin Zhang Yibin Luo Lifeng Cui Fuhong Yu Xingtian Shu | 2023 | Nano Research2023，16，5： | 1 |
| 11 | Testing of 1TnR RRAM array with sneak path technique显示文摘Dear editor,RRAM is regarded as one of the most promising candidates among emerging nonvolatile memory technologies[1,2].Recently,the 1Tn R RRAM structure,in which n RRAM cells in each row share a common bottom electrode connected to the drain node of a selector transistor,was proposed to improve the integration density[3,4].The area of the 1T4R RRAM test chip is 30%smaller than that of the conventional 1T1R cell[3].However,the complexity of the | Xiaole CUI Qiang ZHANG Xiaoxin CUI Xinan WANG Jinfeng KANG Xiaoyan LIU | 2017 | Science China(Information Sciences)2017，60，2： | 0 |
| 12 | Reliability evaluation of high-performance,low-power FinFET standard cells based on mixed RBB/FBB technique显示文摘With shrinking transistor feature size,the fin-type field-effect transistor(FinFET) has become the most promising option in low-power circuit design due to its superior capability to suppress leakage.To support the VLSI digital system flow based on logic synthesis,we have designed an optimized high-performance low-power FinFET standard cell library based on employing the mixed FBB/RBB technique in the existing stacked structure of each cell.This paper presents the reliability evaluation of the optimized cells under process and operating environment variations based on Monte Carlo analysis.The variations are modelled with Gaussian distribution of the device parameters and 10000 sweeps are conducted in the simulation to obtain the statistical properties of the worst-case delay and input-dependent leakage for each cell.For comparison,a set of non-optimal cells that adopt the same topology without employing the mixed biasing technique is also generated.Experimental results show that the optimized cells achieve standard deviation reduction of 39.1%and 30.7%at most in worst-case delay and inputdependent leakage respectively while the normalized deviation shrinking in worst-case delay and input-dependent leakage canbe up to 98.37%and 24.13%,respectively,which demonstrates that our optimized cells are less sensitive to variability and exhibit more reliability. | Tian Wang Xiaoxin Cui Yewen Ni Kai Liao Nan Liao Dunshan Yu Xiaole Cui | 2017 | Journal of Semiconductors2017，38，4： | 0 |
| 13 | Mechanical stretching boosts expansion and regeneration of intestinal organoids through fueling stem cell self-renewal显示文摘Intestinal organoids,derived from intestinal stem cell self-organization,recapitulate the tissue structures and behav-iors of the intestinal epithelium,which hold great potential for the study of developmental biology,disease modeling,and regenerative medicine.The intestinal epithelium is exposed to dynamic mechanical forces which exert profound effects on gut development.However,the conventional intestinal organoid culture system neglects the key role of mechanical microenvironments but relies solely on biological factors.Here,we show that adding cyclic stretch to intestinal organoid cultures remarkably up-regulates the signature gene expression and proliferation of intestinal stem cells.Furthermore,mechanical stretching stimulates the expansion of SOX9+progenitors by activating the Wnt/β-Catenin signaling.These data demonstrate that the incorporation of mechanical stretch boosts the stemness of intestinal stem cells,thus benefiting organoid growth.Our findings have provided a way to optimize an organoid generation system through understanding cross-talk between biological and mechanical factors,paving the way for the application of mechanical forces in organoid-based models. | Fanlu Meng Congcong Shen Li Yang Chao Ni Jianyong Huang Kaijun Lin Zanxia Cao Shicai Xu Wanling Cui Xiaoxin Wang Bailing Zhou Chunyang Xiong Jihua Wang Bing Zhao | 2022 | Cell Regeneration2022，11，1： | 0 |
| 14 | Repair the faulty TSVs with the improved FNS-CAC codec显示文摘Through-silicon via(TSV)is a key enabling technology for the emerging 3-dimension(3 D)integrated circuits(ICs).However,the crosstalk between the neighboring TSVs is one of the important sources of the soft faults.To suppress the crosstalk,the Fibonacci-numeral-system-based crosstalk avoidance code(FNS-CAC)is an effective scheme.Meanwhile,the self-repair schemes are often used to deal with the hard faults,but the repaired results may change the mapping between signals to TSVs,thus may reduce the crosstalk suppression ability of FNS-CAC.A TSV self-repair technique with an improved FNS-CAC codec is proposed in this work.The codec is designed based on the improved Fibonacci numeral system(FNS)adders,which are adaptive to the health states of TSVs.The proposed self-repair technique is able to suppress the crosstalk and repair the faulty TSVs simultaneously.The simulation and analysis results show that the proposed scheme keeps the crosstalk suppression ability of the original FNS-CAC,and it has higher reparability than the local self-repair schemes,such as the signal-switching-based and the signal-shifting-based counterparts. | Wei Chen Cui Xiaole Cui Xiaoxin Feng Xu Jin Yufeng | 2021 | The Journal of China Universities of Posts and Telecommunications2021，28，2： | 0 |
| 15 | A synthesis method for logic circuits in RRAM arrays显示文摘Dear editor,Resistive RAM(RRAM)based logic circuits have attracted much attention in recent years.The IMPLY(material implication)gates are the first published RRAM logic gate family[1],and many synthesis methods based on the IMPLY gates have been proposed and discussed in literature. | Xiaole CUI Xiao MA Feng WEI Xiaoxin CUI | 2020 | Science China(Information Sciences)2020，63，10： | 0 |
| 16 | Boron:A key functional component for designing high-performance heterogeneous catalysts显示文摘Heterogeneous catalysis is a vivid branch of traditional catalysis field,with the advantage of high efficiency and being easily separated from reactants and products after reaction,and have received widespread attentions in large-scale industrial production,especially in the field of energy utilization.Boron has been found to be a key functional component for designing high-performance heterogeneous catalysts.In this review,we cover and categorize the past and recent progress in boron-containing materials and their applications in heterogeneous catalysis particularly in energy-related fields.The fundamental roles of boron components in the emerging heterogeneous catalysis of construction,regulation and stabilization of active phases/sites are highlighted,with the emphasis on how they regulating structural and electronic properties of host materials.We then categorize boron-containing catalysts into six kinds mainly including intermetallic boride catalysts,metal boride-derived catalysts,boron-doped catalysts,metal boride-decorated catalysts,boron-containing compounds as catalyst supports,and singleboron-site catalysts,as well as try to establish structure-catalytic activity relationship.The catalytic applications of these six boron-containing catalysts are discussed separately,focusing on the energy-related reactions such as hydrogen evolution reaction(HER),oxygen evolution reaction(OER),oxygen reduction reaction(ORR),carbon dioxide reduction reaction(CO_(2)RR)and nitrogen reduction reaction(NRR).Finally,the opportunities and challenges related to boron-containing compounds in the field of catalysis are prospected. | Meihong Fan Xiao Liang Qiuju Li Lili Cui Xingquan He Xiaoxin Zou | 2023 | Chinese Chemical Letters2023，34，1： | 0 |
| 17 | Three-dimensional porous photo-thermal fiber felt with salt-resistant property for high efficient solar distillation显示文摘The urgent need for fresh water resource is a public issue facing the world.Solar distillation for seawater desalination is a promising freshwater production method.Interfacial solar evaporation systems based on 2 D photo-thermal membranes have been widely studied,but salt pollution is one of the main challenges for solar distillation.In order to solve this problem,a hydrophilic three-dimensional(3 D)porous photo-thermal fiber felt(PFF)was obtained by one-step method,through a simple polydopamine(PDA)coating method with hydrophobic graphite felt as a substrate.The PFF had a good evaporation rate of 1.48 kg m^(-2)h^(-1)and its corresponding light-vapor conversion efficiency reached 87.4%.In addition,the PFF exhibited an excellent salt-resistant ability when applied to photo-thermal evaporation of highsalinity seawater with 10 wt%NaCl,owing to its intrinsic 3 D macroporous structure for the migration circulation of salt ions.The development of the PFF offers a new route for the exploration of salt-re sistant photo-thermal materials and is promising for the practical application of solar distillation. | Jingjing Zhang Xueqing Luo Xiaoxin Zhang Ying Xu Hongbo Xu Jinlong Zuo Dongmei Liu Fuyi Cui Wei Wang | 2021 | Chinese Chemical Letters2021，32，4： | 0 |
| 18 | Ultralow-power high-speed flip-flop based on multimode Fin FETs显示文摘In this paper, we first reconstruct a novel planar static contention-free single-phase-clocked flipflop(S2CFF) based on high-performance fin-type field-effect transistors(FinF ETs) to achieve high speed and ultralow power consumption. Benefiting from better control of the conductive channel, the shorted-gate(SGmode) FinF ET flip-flop obtains a persistent reduction of 56.7% in average power consumption as well as a considerable improvement in timing performance at a typical 10% data switching activity, while the low-power(LP-mode) FinF ET flip-flop promotes the power reduction to 61.8% without appreciable degradation in speed.However, through further analysis of the simulation results, we have revealed an unnecessary energy loss caused by the redundant leaps of internal nodes at the static input ‘0', which has a noticeable negative impact on total power consumption at low data switching activity. In order to overcome this defect, a conditional precharge technique is introduced to control the charging path, and we demonstrate that the independent-gate(IG-mode)FinF ET is the best option for the added control transistor. The verification results indicate that our optimization reduces the power consumption by more than 50% at low data switching activity with an acceptable area and setup time penalty compared with that of LP-mode FinF ET flip-flop. | Kai LIAO Xiaoxin CUI Nan LIAO Tian WANG Dunshan YU Xiaole CUI | 2016 | Science China(Information Sciences)2016，59，4： | 0 |
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