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23篇 您的检索式:作者名="Ledentsov"
    题名 作者 年代 出处 被引量
1Optical properties of heterostruetures with InGaAs-GaAs quanrum clusters显示文摘LEDENTSOV N N USTINOV V M EGOROV A Y 1994Semiconductors1994,28,8:1
2Low threshold,large To injection laser emission from InGaAs quantum dots显示文摘KIRSTAEDTER N LEDENTSOV N N GRUNDMANN M 1994Electron Lett1994,30,17:1
3Model adaptivity for industrial application of sheet metal forming simulation显示文摘Dmitry Ledentsov Alexander Düster Wolfram Volk 2010Finite Elements in Analysis and Design2010,46,7:1
4Direct synthesis of corrugated superlattices on (100) -oriented surfaces 显示文摘NOTZEL R LEDENTSOV N N DAWERITZ L 1991Phys Rev Lett1991,67,27:1
5Spontaneous ordering arrays of coherent strained islands 显示文摘SHCHUKIN V A LEDENTSOV N N KOPEV P S 1995Physical Review Letters1995,75,16:1
6High-power edgeemitting laser diode with narrow ver- tical beam divergence显示文摘LEDENTSOV N N SHCHUKIN V A NOVIKOV I I 2011Electronics Letters2011,47,24:1
7Tilted wave lasers: A way to high brightness sources of light显示文摘SHCHUKIN V LEDENTSOV N POSILOVIC K 2011Quantum Electron2011,47,7:1
8GaAs-based 1.3 μm InGaAs quantum dot lasers: A status report显示文摘M. V. Maximov N. N. Ledentsov V. M. Ustinov Zh. I. Alferov D. Bimberg 2000Journal of Electronic Materials2000,,5:1
9InGaAs-GaAs quantum-dot lasers 显示文摘BIMBERG D KIRSTAEDTER N LEDENTSOV N N 1997IEEE Journal of Selected Topics in Quantum Electronics1997,3,2:1
10InGaAs-GaAs quantum-dot lasers显示文摘Bimberg D Kirstaedter N Ledentsov N N Alferov Zh I Kopev P S Ustinov V M 0,,02:1
11Quantum dot origin of luminescence in InGaN-GaN structures显示文摘I L Krestnikov N N Ledentsov A Hoffmann 2002Phys Rev B2002,66,:1
12Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers显示文摘Kirstaedter N Schmidt O G Ledentsov N N Bimberg D Ustinov V M Egorov A Yt Zhukov A E Maximov M V Kopev P S Alferov Zh L 0,,09:1
13High temperature laser diode based on a single sheet of quantum dots显示文摘LEDENTSOV N N SHCHUKIN V A MAXIMOV M V 2015Semiconductor Science and Technology2015,30,10:1
14Quantum-dot vertical-cavity surface-emitting lasers显示文摘BIMBERG D LEDENTSOV N N LOTT J A 2002MRS Bull2002,27,7:1
15Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots显示文摘Blokhin S A Maleev N A Kuzmenkov A G Sakharov A V Kulagina M M Shernyakov Yu M Novikov I I Maximov M V Ustinov V M Kovsh A R Mikhrin S S Ledentsov N N Lin G Chi J Y 0,,09:1
16120℃C 20Gbit/s opration of 980nm VCSEL显示文摘Mutig A Fiol G Moser P Arsenijevic D Shchukin V A Ledentsov N N Mikhrin S S Krestnikov I L Livshits D L Kovsh A R Hopfer F Bimberg D 0,,22:1
17Low threshold,large T0 injection laser emission from (InGa)As quantum dots显示文摘Kirstaedter N Ledentsov N N Grundmann M Bimberg D Ustinov V M Ruvimov S S Maximov M V Kopev P S Alferov Zh I Richter U Werner P Gosele U Heydenreich J 0,,17:1
18InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (To =385 K) grown by metal organic chemical vapour deposition显示文摘Maximov M V Kochnev I V Shemyakov Y M Zaitsev S V Gordeev N Yu Tsatsulnikov A F Sakharov A V Krestnikov I L Kopev P S Alferov Zh I Ledentsov N N Bimberg D Kosogov A O Wemer P G(o)sele U 0,,16:1
19Semiconductor quantum dots for application in diode lasers 显示文摘Grundmann M Ledentsov N N 1998Thin Solid Films1998,318,:1
20Complete suppression of filamentation and superior beam quality in quantum-dot lasers显示文摘Ribbat Ch Sellin R L Kaiander I Hopfer F Ledentsov N N Bimberg D Kovsh A 1 Ustinov V M Zhukov A E Maximov M V 0,,06:1
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