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21篇 您的检索式：作者名="LEDENTSOV N N"

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	题名	作者	年代	出处	被引量
1	Optical properties of heterostruetures with InGaAs-GaAs quanrum clusters显示文摘	LEDENTSOV N N USTINOV V M EGOROV A Y	1994	Semiconductors1994，28，8：	1
2	Low threshold,large To injection laser emission from InGaAs quantum dots显示文摘	KIRSTAEDTER N LEDENTSOV N N GRUNDMANN M	1994	Electron Lett1994，30，17：	1
3	Direct synthesis of corrugated superlattices on (100) -oriented surfaces 显示文摘	NOTZEL R LEDENTSOV N N DAWERITZ L	1991	Phys Rev Lett1991，67，27：	1
4	Spontaneous ordering arrays of coherent strained islands 显示文摘	SHCHUKIN V A LEDENTSOV N N KOPEV P S	1995	Physical Review Letters1995，75，16：	1
5	High-power edgeemitting laser diode with narrow ver- tical beam divergence显示文摘	LEDENTSOV N N SHCHUKIN V A NOVIKOV I I	2011	Electronics Letters2011，47，24：	1
6	Tilted wave lasers: A way to high brightness sources of light显示文摘	SHCHUKIN V LEDENTSOV N POSILOVIC K	2011	Quantum Electron2011，47，7：	1
7	InGaAs-GaAs quantum-dot lasers 显示文摘	BIMBERG D KIRSTAEDTER N LEDENTSOV N N	1997	IEEE Journal of Selected Topics in Quantum Electronics1997，3，2：	1
8	InGaAs-GaAs quantum-dot lasers显示文摘	Bimberg D Kirstaedter N Ledentsov N N Alferov Zh I Kopev P S Ustinov V M		0，，02：	1
9	Quantum dot origin of luminescence in InGaN-GaN structures显示文摘	I L Krestnikov N N Ledentsov A Hoffmann	2002	Phys Rev B2002，66，：	1
10	Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers显示文摘	Kirstaedter N Schmidt O G Ledentsov N N Bimberg D Ustinov V M Egorov A Yt Zhukov A E Maximov M V Kopev P S Alferov Zh L		0，，09：	1
11	High temperature laser diode based on a single sheet of quantum dots显示文摘	LEDENTSOV N N SHCHUKIN V A MAXIMOV M V	2015	Semiconductor Science and Technology2015，30，10：	1
12	Quantum-dot vertical-cavity surface-emitting lasers显示文摘	BIMBERG D LEDENTSOV N N LOTT J A	2002	MRS Bull2002，27，7：	1
13	Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots显示文摘	Blokhin S A Maleev N A Kuzmenkov A G Sakharov A V Kulagina M M Shernyakov Yu M Novikov I I Maximov M V Ustinov V M Kovsh A R Mikhrin S S Ledentsov N N Lin G Chi J Y		0，，09：	1
14	120℃C 20Gbit/s opration of 980nm VCSEL显示文摘	Mutig A Fiol G Moser P Arsenijevic D Shchukin V A Ledentsov N N Mikhrin S S Krestnikov I L Livshits D L Kovsh A R Hopfer F Bimberg D		0，，22：	1
15	Low threshold,large T0 injection laser emission from (InGa)As quantum dots显示文摘	Kirstaedter N Ledentsov N N Grundmann M Bimberg D Ustinov V M Ruvimov S S Maximov M V Kopev P S Alferov Zh I Richter U Werner P Gosele U Heydenreich J		0，，17：	1
16	InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (To =385 K) grown by metal organic chemical vapour deposition显示文摘	Maximov M V Kochnev I V Shemyakov Y M Zaitsev S V Gordeev N Yu Tsatsulnikov A F Sakharov A V Krestnikov I L Kopev P S Alferov Zh I Ledentsov N N Bimberg D Kosogov A O Wemer P G(o)sele U		0，，16：	1
17	Semiconductor quantum dots for application in diode lasers 显示文摘	Grundmann M Ledentsov N N	1998	Thin Solid Films1998，318，：	1
18	Complete suppression of filamentation and superior beam quality in quantum-dot lasers显示文摘	Ribbat Ch Sellin R L Kaiander I Hopfer F Ledentsov N N Bimberg D Kovsh A 1 Ustinov V M Zhukov A E Maximov M V		0，，06：	1
19	Impact of the mesa etching profiles on the spectral hole burning effects in quantum dot lasers显示文摘	Ouyang D Ledentsov N N Bognar S Hopfer F Sellin R L Kaiander I Bimberg D		0，，05：	1
20	Direct formation of vertically coupled quantum dots in stranski-krastanow growth显示文摘	LEDENTSOV N N USTINOV V M BOROVKOV A I	1996	Phys Rev B1996，54，：	1

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