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145篇 您的检索式：作者名="Gosele"

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	题名	作者	年代	出处	被引量
1	Porous silicon formation: a quantum wire effect 显示文摘	LEHMANN V GOSELE U	1991	Appl Phys Lett1991，58，8：	1
2	Gas development at the interface of directly bonded silicon wafers:investigation on silicon-based pressure sensors显示文摘	Mack S Baumann H Gosele U	1996	Sensors and Actuators A1996，56，3：	1
3	Self- organized formation of hexagonal pore arrays in anodic alumina 显示文摘	JESSENSKY O MULLER F GOSELE U	1998	Appl Phys Lett1998，72，：	1
4	显示文摘	Li N Tan T Y Gosele U	2007	Applied Physics a-Materials Science & Processing2007，86，4：	1
5	A model for the silicon wafer bonding process显示文摘	STENGL R TAN T GOSELE U	1989	Japanese Journal of Applied Physics1989，28，10：	1
6	Porous silicon formation : A quantum wire effect 显示文摘	Ehmann V Gosele V	1991	Appl Phys Lett1991，58，：	1
7	A chimaeric ribonuclease-inhibitor gene restores fertility to male sterile plants显示文摘	Mariani C Gosele V De Bluckeleer M De Block M Robert B Goldberg De Greef W Leemans J	1992	Nature1992，357，6：	1
8	显示文摘	Tan T Y Li N Gosele U	2004	Applied Physics a-Materials Science & Processing2004，78，4：	1
9	A Model of Extrusions and Intrusions in Fatigued Metals I, Point-Defect Production and the Growth of Extrusions显示文摘	Essmann U Gosele U Mughrabi H	1981	Philosophical Magazine A1981，44，40：	1
10	显示文摘	Tan T Y Li N Gosele U	2003	Applied Physics Letters2003，83，6：	1
11	Self-organized for-mation of hexagonal pore arrays in anodic alumina 显示文摘	Jessensky O Muller F Gosele U	1998	Appl Phys Lett1998，72，10：	1
12	Gold at the root or at the tip of Zno nanowires:a modeL显示文摘	Kim D S Scholz R Gosele U Zacharias M		0，，10：	1
13	显示文摘	Tan T Y Lee S T Gosele U	2002	Applied Physics a- Materials Science & Processing2002，74，3：	1
14	Spectral Analysis of Floating Car Data显示文摘	Gosel F Michler E Wrase B	2003	Advances in Radio Science Kleinheubacher Berichte2003，，1：	1
15	Cerebrovascular dysfunction and microcirculation rarefaction precede white matter lesions in a mouse genetic model of cerebral ischemic small vessel disease显示文摘	Joutel A Monet-Lepr(e)tre M Gosele C	2010	Clin Invest2010，120，2：	1
16	Improvement of minority carrier diffusion length in Si by Al gettering显示文摘	Subhashi M Joshi Ulrich M Gosele Teh Y Tan	1995	J Appl Phys1995，77，8：	1
17	Carbon-induced undersaturation of silicon self-interstitials 显示文摘	Scholz R F Werner P Gosele U	1998	Appl Phys Lett1998，72，07：	1
18	Self interstitial enhanced carbon diffusion in silicon 显示文摘	Kalejs J P Ladd L A Gosele U	1984	Appl Phys Lett1984，45，4：	1
19	Fast fabrication of long-range ordered porous alumina membranes by hard anodization显示文摘	Lee W Ji R Gosele	2006	Nature Materials2006，5，9：	1
20	The contribution of vacancies to carbon out-diffusion in silicon 显示文摘	Scholz R F Werner P Gosele U	1999	Appl Phys Lett1999，74，12：	1

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