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| 1 | Research on single event transient pulse quenching effect in 90 nm CMOS technology显示文摘Since single event transient pulse quenching can reduce the SET(single event transient) pulsewidths effectively,the charge collected by passive device should be maximized in order to minimize the propagated SET.From the perspective of the layout and circuit design,the SET pulsewidths can be greatly inhibited by minimizing the layout spacing and signal propagation delay,which sheds new light on the radiation-hardened ICs(integrated circuits) design.Studies show that the SET pulsewidths of propagation are not in direct proportion to the LET(linear energy transfer) of incident particles,thus the defining of the LET threshold should be noted when SET/SEU(single event upset) occurs for the radiation-hardened design.The capability of anti-radiation meets the demand when LET is high but some soft errors may occur when LET is low.Therefore,radiation experiments should be focused on evaluating the LET that demonstrates the worst response to the circuit. | QIN JunRui CHEN ShuMing LIU BiWei CHEN JianJun LIANG Bin LIU Zheng | 2011 | Science China(Technological Sciences)2011，54，11： | 14 |
| 2 | The effect of P^+ deep well doping on SET pulse propagation显示文摘The change of P+ deep well doping will affect the charge collection of the active and passive devices in nano-technology,thus affecting the propagated single event transient(SET) pulsewidths in circuits.The propagated SET pulsewidths can be quenched by reducing the doping of P+ deep well in the appropriate range.The study shows that the doping of P+ deep well mainly affects the bipolar amplification component of SET current,and that changing the P+ deep well doping has little effect on NMOS but great effect on PMOS. | QIN JunRui CHEN ShuMing LIU BiWei LIU FanYu CHEN JianJun | 2012 | Science China(Technological Sciences)2012，55，3： | 7 |
| 3 | Novel N-hit single event transient mitigation technique via open guard transistor in 65 nm bulk CMOS process显示文摘In this paper,we proposed a new n-channel MOS single event transient(SET) mitigation technique,which is called the open guard transistor(OGT) technique.This hardening scheme is compared with several classical n-channel MOS hardening structures through 3-D TCAD simulations.The results show that this scheme presents about 35% improvements over the unhardened scheme for mitigating the SET pulse,and its upgrade,the 2-fringe scheme,takes on even more than 50% improvements over the unhardened one.This makes significant sense for the semi-conductor device reliability. | HUANG PengCheng CHEN ShuMing CHEN JianJun LIU BiWei | 2013 | Science China(Technological Sciences)2013，56，2： | 5 |
| 4 | Effect of p-well contact on n-well potential modulation in a 90 nm bulk technology显示文摘The effect of p-well contact on the n-well potential modulation in a 90 nm bulk technology with P+ deep well is studied based on three-dimensional (3-D) TCAD device simulations. Simulation results illustrate that the p-well contact area has a great impact on the n-well potential modulation and the enhancement factor will level out as the p-well contact area increases, and that at the same time the increase of p-well doping concentration can also enhance the n-well potential modulation. However, the effect of p-well contact location on the n-well modulation is not obvious as the p-well contact distance increases. According to our simulation results, it is proposed that the p-well contact area should be cautiously designed to mitigate single event effect (SEE) in the P+ deep well technology. | DU YanKang CHEN ShuMing LIU BiWei LIANG Bin | 2012 | Science China(Technological Sciences)2012，55，4： | 4 |
| 5 | Charge collection of single event effects at Bragg's peak显示文摘Using Geant4 Monte Carlo code and Technology Computer-Aided Design(TCAD) simulation,energy deposition and charge collection of single event effects(SEE) are studied,which are induced by low-energy protons and α particles in small feature size devices.We analyzed charge collection of SEE especially at Bragg's peak and obtained two types of deposited energy distributions of protons and α particles at different incident energies.The two components of the total charge collected are quantified,which are due to drift current of the space charge region and current in the funnel region separately.Results explain the high soft error rate in experiments of low energy proton. | LIU Zheng CHEN ShuMing LIANG Bin LIU BiWei ZHAO ZhenYu | 2011 | Science China(Physics,Mechanics & Astronomy)2011，54，2： | 2 |
| 6 | Coupled SET pulse injection in a circuit simulator in ultra-deep submicron technology显示文摘 | LIU Biwei CHEN Shuming LIANG Bin | 2008 | Chinese Journal of Semiconductor2008，29，9： | 1 |
| 7 | Utilizing the full capacity of carbon black as anode for Na-ion batteries via solvent co-intercalation显示文摘 | Wei Xiao Qian Sun Jian Liu Biwei Xiao Per-Anders Glans Jun Li Ruying Li Jinghua Guo Wanli Yang Tsun-Kong Sham Xueliang Sun | 2017 | Nano Research2017，10，12： | 1 |
| 8 | The effect of re-convergence on SER estimation in combinational circuits 显示文摘 | Liu Biwei Chen Shuming Liang Bin Liu Zheng Zhao Zhenyu | | IEEE Trans Nucl Sci0，56，6： | 1 |
| 9 | A novel strategy for boosting the photoluminescence quantum efficiency of CdSe nanocrystals at room temperature显示文摘Highly luminescent colloidal nanocrystals have wide applications in bioimaging and various optoelectronic devices.Herein we report a facile and mild procedure by combining S2-treatment and binary ligand passivation,which can efficiently enhance the luminescent property of CdSe nanocrystals at room temperature.The photoluminescence quantum yield of as-treated CdSe nanocrystals exhibits drastic enhancement(e.g.,188 times for CdSe nanorods)after this dual-passivation treatment.The methodology proposed here can be applied to various CdSe nanocrystals,regardless of their sizes,shapes,and crystal structures. | Biwei Wang Limin Liu Yi Zhang Yonghui Deng Angang Dong | 2020 | Chinese Chemical Letters2020，31，1： | 1 |
| 10 | Simulation study of N-hit SET variation in differential cascade voltage switch logical circuits显示文摘The advancement in the process leads to more concern about the Single Event(SE) sensitivity of the Differential Cascade Voltage Switch Logic(DCVSL) circuits. The simulation results indicate that the Single Event Transient(SET) generated at the DCVSL gate is much larger than that at the ordinary CMOS gate, and their SET variation is different. Based on charge collection, in this paper, the effective collection time theory is proposed to set forth the SET pulse generated at the DCVSL gate. Through 3D TCAD mixed-mode simulation in 65 nm twin-well bulk CMOS process, the effects on SET variation of device parameters such as well contact size and environment parameters such as voltage are investigated. | HUANG PengCheng CHEN ShuMing CHEN JianJun WU ZhenYu LIANG ZhengFa HU ChunMei LIANG Bin LIU BiWei | 2015 | Science China(Information Sciences)2015，58，2： | 1 |
| 11 | The effect of re-convergence on SER estimation in combinational cir- cuits显示文摘 | LIU Biwei CHEN Shuming LIANG Bin | 2009 | IEEE Transactions on Nuclear Science2009，56，6： | 1 |
| 12 | The Effect of Re-Convergence on SER Estimation in Combinational Cir-cuits显示文摘 | Liu Biwei Chen Shuming Liang Bin | 2009 | IEEE Transactions on Nuclear Science2009，56，6： | 1 |
| 13 | Device-physics-based analytical model for SET pulse in sub-100 nm bulk CMOS Process显示文摘Through revising the process of charge collection for reversed drain-bulk junction,a bias-dependent SPICE model is proposed which includes the bipolar amplification effect that cannot be ignored in PMOS.The model can capture the plateau effect,and produce current and voltage pulse shapes and widths that are consistent with TCAD simulation.Considering the case of connecting load,it is still valid.For combination and sequential logic circuits,the SET pulsewidths and LET upset threshold from SPICE model are consistent with TCAD simulations. | QIN JunRui CHEN ShuMing LIU BiWei LIANG Bin CHEN JianJun | 2012 | Science China(Information Sciences)2012，55，6： | 1 |
| 14 | Challenges and approaches of single-crystal Ni-rich layered cathodes in lithium batteries显示文摘High energy density and high safety are incompatible with each other in a lithium battery,which challenges today's energy storage and power applications.Ni-rich layered transition metal oxides(NMCs)have been identified as the primary cathode candidate for powering next-generation electric vehicles and have been extensively studied in the last two decades,leading to the fast growth of their market share,including both polycrystalline and single-crystal NMC cathodes.Single-crystal NMCs appear to be superior to polycrystalline NMCs,especially at low Ni content(≤60%).However,Ni-rich single-crystal NMC cathodes experience even faster capacity decay than polycrystalline NMC cathodes,rendering them unsuitable for practical application.Accordingly,this work will systematically review the attenuation mechanism of single-crystal NMCs and generate fresh insights into valuable research pathways.This perspective will provide a direction for the development of Ni-rich single-crystal NMC cathodes. | Jiangtao Hu Hongbin Wang Biwei Xiao Pei Liu Tao Huang Yongliang Li Xiangzhong Ren Qianling Zhang Jianhong Liu Xiaoping Ouyang Xueliang Sun | 2023 | National Science Review2023，10，12： | 0 |
| 15 | Hollow CdS-based photocatalysts显示文摘In recent years,photocatalytic technology,driven by solar energy,has been extensively investigated to ease energy crisis and environmental pollution.Nevertheless,efficiency and stability of photocatalysts are still unsatisfactory.To address these issues,design of advanced photocatalysts is important.Cadmium sulphide(CdS)nanomaterials are one of the promising photocatalysts.Among them,hollow-structured CdS,featured with enhanced light absorption ability,large surface area,abundant active sites for redox reactions,and reduced diffusion distance of photogenerated carriers,reveals a broad application prospect.Herein,main synthetic strategies and formation mechanism of hollow CdS photocatalysts are summarized.Besides,we comprehensively discuss the current development of hollow-structured CdS nanomaterials in photocatalytic applications,including H2 production,CO2 reduction and pollutant degradation.Finally,brief conclusions and perspectives on the challenges and future directions for hollow CdS photocatalysts are proposed. | Xiangyu Liu Mahmoud Sayed Chuanbiao Bie Bei Cheng Biwei Hu Jiaguo Yu Liuyang Zhang | 2021 | Journal of Materiomics2021，7，3： | 0 |
| 16 | Calcyclin-binding protein contributes to cholangiocarcinoma progression by inhibiting ubiquitination of MCM2显示文摘Background:Cholangiocarcinoma(CCA)represents the epithelial cell cancer with high aggressiveness whose five-year survival rate is poor with standard treatment.Calcyclin-binding protein(CACYBP)shows aberrant expression within several malignant tumors,but the role of CACYBP in CCA remains unknown.Methods:Immunohistochemical(IHC)analysis was used to identify CACYBP overexpression in clinical samples of CCA patients.Moreover,its correlation with clinical outcome was revealed.Furthermore,CACYBP’s effect on CCA cell growth and invasion was investigated in vitro and in vivo using loss-of-function experiments.Results:CACYBP showed up-regulation in CCA,which predicts the dismal prognostic outcome.CACYBP had an important effect on in-vitro and in-vivo cancer cell proliferation and migration.Additionally,knockdown of CACYBP weakened protein stability by promoting ubiquitination of MCM2.Accordingly,MCM2 up-regulation partly reversed CACYBP deficiency’s inhibition against cancer cell viability and invasion.Thus,MCM2 might drive CCA development by Wnt/β-catenin pathway.Conclusions:CACYBP exerted a tumor-promoting role in CCA by suppressing ubiquitination of MCM2 and activating Wnt/β-catenin pathway,hence revealing that it may be the possible therapeutic target for CCA treatment. | YUSEN ZHANG LIPING LIU BIWEI LUO HONGGUI TANG XIAOFANG YU SHIYUN BAO | 2023 | Oncology Research2023，31，3： | 0 |
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