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		题名	作者	年代	出处	被引量
	1	3-D TCAD simulation study of the single event effect on 25 nm raised source-drain FinFET显示文摘Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is studied.Based on the calibrated 3-D models by process simulation,it is found that the amount of charge collected increases linearly as the linear energy transfer(LET) increases for both n-type and p-type FinFET hits,but the single event transient(SET) pulse width is not linear with the incidence LET and the increasing rate will gradually reduce as the LET increases.The impacts of wafer thickness on the charge collection are also analyzed,and it is shown that a larger thickness can bring about stronger charge collection.Thus reducing the wafer thickness could mitigate the SET effect for FinFET technology.	QIN JunRui CHEN ShuMing CHEN JianJun	2012	Science China(Technological Sciences)2012，55，6：	3
	2	Modeling to predict the time evolution of negative bias temperature instability(NBTI) induced single event transient pulse broadening显示文摘An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability (NBTI) degradation model, a novel analytical model is developed to predict the time evolution of the NBTI induced SET broadening in the production, and NBTI experiments and three-dimensional numerical device simulations are used to verify the model. At the same time, an analytical model to predict the time evolution of the NBTI induced SET broadening in the propagation is also proposed, and NBTI experiments and the simulation program with integrated circuit emphasis (SPICE) are used to verify the proposed model.	CHEN ShuMing CHEN JianJun CHI YaQing LIU FanYu HE YiBai	2012	Science China(Technological Sciences)2012，55，4：	0

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