|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Substitutional doping in 2D transition metal dichalcogenides显示文摘Two-dimensional(2D)van der Waals transition metal dichalcogenides(TMDs)are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental studies.Similar to conventional semiconductors,substitutional doping is key to tailoring their electronic properties and enabling their device applications.Here,we review recent progress in doping methods and understanding of doping effects in group 6 TMDs(MX2,M=Mo,W;X=S,Se,Te),which are the most widely studied model 2D semiconductor system.Experimental and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n-or p-type dopants.This review will survey the impact of substitutional doping on the electrical and optical properties of these materials,discuss open questions,and provide an outlook for further studies. | Leyi Loh Zhepeng Zhang Michel Bosman Goki Eda | 2021 | Nano Research2021，14，6： | 4 |
| 2 | An innovative way of etching MoS2: Characterization and mechanistic investigation显示文摘 | Yuan Huang Jing Wu Xiangfan Xu Yuda Ho Guangxin Ni Qiang Zou Gavin Kok Wai Koon Weijie Zhao A. H. Castro Neto Goki Eda Chengmin Shen Barbaros Ozyilmaz | 2013 | Nano Research2013，6，3： | 2 |
| 3 | Emergence of photoluminescence on bulk MoS2 by laser thinning and gold particle decoration显示文摘 | Lili Gong Qi Zhang Liangjun Wang Jianfeng Wu Cheng Han Bo Lei Wei Chen Goki Eda Kuan Eng Johnson Goh Chorng Haur Sow | 2018 | Nano Research2018，11，9： | 1 |
| 4 | Graphene oxide as a chemically tunable platform for optical applications 显示文摘 | Kian Ping Loh Bao Qiaoliang Goki eda | 2010 | Nature Chemistry2010，2，： | 1 |
| 5 | Large-area uhrathin films of reduced graphene oxide as a transparent and flexible electronic material 显示文摘 | Eda Goki Fanchini Giovanni Chhowalla Manish | 2008 | Nature nanotechnology2008，3，5： | 1 |
| 6 | Tunable Photoluminescence from Graphene Oxide显示文摘 | Chih‐Tao Chien Shao‐Sian Li Wei‐Jung Lai Yun‐Chieh Yeh Hsin‐An Chen I‐Shen Chen Li‐Chyong Chen Kuei‐Hsien Chen Takashi Nemoto Seiji Isoda Mingwei Chen Takeshi Fujita Goki Eda Hisato Yamaguchi Manish Chhowalla Chun‐Wei Chen | 2012 | Angew. Chem. Int. Ed2012，，27： | 1 |
| 7 | Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material显示文摘 | Goki Eda Giovanni Fanchini Manish Chhowalla | 2008 | Nature nanotechnology2008，3，5： | 1 |
| 8 | Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material显示文摘 | Eda Goki Fanchini Giovanni Chhowalla Manish | 2008 | Nature Nanotechnology2008，3，： | 1 |
| 9 | Significantly enhanced of tungsten diselenide functionalization optoelectronic performance phototransistor via surface显示文摘 | Bo Lei | 2017 | Nano Research2017，10，4： | 1 |
| 10 | Tuning photoresponse of graphene-black phosphorus heterostructure by electrostatic gating and photo-induced doping显示文摘Metal-semiconductor diodes constructed from two-dimensional(2D)van der Waals heterostructures show excellent gate electrostatics and a large built-in electric field at the tunnel junction,which can be exploited to make highly sensitive photodetector.Here we demonstrate a metal-semiconductor photodiode constructed by the monolayer graphene(Gr)on a few-layer black phosphorus(BP).Due to the presence of a built-in potential barrier(~0.09±0.03 eV)at the Gr-BP interface,the photoresponsivity of the Gr-BP device is enhanced by a factor of 672%,and the external quantum efficiency(EQE)increases to648%from 84%of the bare BP.Electrostatic gating allows the BP channel to be switched between p-type and n-type conduction.We further demonstrate that excitation laser power can be used to control the current polarity of the Gr-BP device due to photon-induced doping.The versatility of the Gr-BP junctions in terms of electrostatic bias-induced or light-induced switching of current polarity is potentially useful for making dynamically reconfigurable digital circuits. | Yanpeng Liu Ming Yang Junpeng Lu Ying Liu Hongwei Liu Erwen Zhang Wei Fu Junyong Wang Zhenliang Hu Jun Yin Goki Eda Shijie Wang Jiabao Yi Ajayan Vinu Kian Ping Loh | 2022 | Chinese Chemical Letters2022，33，1： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员