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5篇 您的检索式:作者名="G.L.Wang"
    题名 作者 年代 出处 被引量
1Effect of Yttrium Addition on Microstructural Characteristics and Superplastic Behavior of Friction Stir Processed ZK60 Alloy显示文摘As-extruded ZK60 and ZK60-Y magnesium alloy plates were successfully processed via friction stir processing(FSP) at a tool rotation rate of 1600 r/min and a traverse speed of 200 mm/min. FSP resulted in the formation of equiaxed recrystallized microstructures with the average grain sizes of w8.5 and w4.7 mm in the ZK60 and ZK60-Y alloys, respectively. Moreover, FSP broke and dispersed the MgZn2 and W-phase(Mg3 Zn3 Y2) particles and dissolved MgZn2 phase in the FSP ZK60 alloy. With the addition of rare earth element yttrium(Y) into the ZK60 alloy, the ratio of the high angle grain boundaries(HAGBs) in the FSP alloys increased from 64% to 90%, and a certain amount of twins appeared in the FSP ZK60-Y alloy. The maximum elongation of 1200% and optimum strain rate of 3 103s1achieved at 450 C in the FSP ZK60-Y alloy were substantially higher than those of the FSP ZK60 alloy. This is attributed to the fine grains with high ratio of HAGBs and the distribution of a large number of dispersed second phase particles with high thermal stability in the FSP ZK60-Y alloy. Grain boundary sliding was identified as the primary deformation mechanism in the FSP ZK60 and ZK60-Y alloys from the superplastic data analyses and surficial morphology observations.Z.A.Luo G.M.Xie Z.Y.Ma G.L.Wang G.D.Wang 2013Journal of Materials Science & Technology2013,29,12:9
2查看详情显示文摘M.S.Qin Z.K.Gao G.L.Wang 0,,12:1
3Surface Embedding of Non-Bipartite k-Extendable Graphs显示文摘For every surface,we find the minimum number k such that every non-bipartite graph that is embeddable in that surface is not k-extendable.In particular,we construct a family of 3-extendable graphs which we call bow-tie graphs.This confirms the existence of an infinite number of 3-extendable non-bipartite graphs that are embeddable in the Klein bottle.Hongliang Lu David G.L.Wang 2022Annals of Applied Mathematics2022,38,1:0
4Stress-rupture behavior of a Re-containing Ni-base single crystal superalloy at high temperatures显示文摘A Re-containing Ni-base single crystal superalloy was used to investigate the elementary processes associated with stress-rupture behavior at different temperatures where theγʹrafting occurs.At 900°C,the rupture behavior is mainly determined by the multiplication of dislocations within the wideningγchannels,which is closely linked with the propagation of microcracks along the inherentγ/γʹinterfaces.The rapid formation of lamellaγ/γʹraft structure,along with the developed-well interfacial dislocation networks,and its elastic instability are primarily responsible for the rupture behavior at 1100°C.There is a clear curvature tendency in the Larson-Miller plot of stress-rupture lifetime in relation to stress at high temperatures.It indicates that the influence extent ofγʹrafting on stress-rupture behavior is sensitive to the acting conditions of temperature and stress.G.L.Wang D.Q.Qi J.L.Liu J.D.Liu J.G.Li Y.Z.Zhou X.F.Sun 2023Journal of Materials Science & Technology2023,,32:0
5STCF conceptual design report (Volume 1): Physics & detector显示文摘The superτ-charm facility(STCF)is an electron–positron collider proposed by the Chinese particle physics community.It is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of 0.5×1035 cm–2·s–1 or higher.The STCF will produce a data sample about a factor of 100 larger than that of the presentτ-charm factory—the BEPCII,providing a unique platform for exploring the asymmetry of matter-antimatter(charge-parity violation),in-depth studies of the internal structure of hadrons and the nature of non-perturbative strong interactions,as well as searching for exotic hadrons and physics beyond the Standard Model.The STCF project in China is under development with an extensive R&D program.This document presents the physics opportunities at the STCF,describes conceptual designs of the STCF detector system,and discusses future plans for detector R&D and physics case studies.M.Achasov X.C.Ai L.P.An R.Aliberti Q.An X.Z.Bai Y.Bai O.Bakina A.Barnyakov V.Blinov V.Bobrovnikov D.Bodrov A.Bogomyagkov A.Bondar I.Boyko Z.H.Bu F.M.Cai H.Cai J.J.Cao Q.H.Cao X.Cao Z.Cao Q.Chang K.T.Chao D.Y.Chen H.Chen H.X.Chen J.F.Chen K.Chen L.L.Chen P.Chen S.L.Chen S.M.Chen S.Chen S.P.Chen W.Chen X.Chen X.F.Chen X.R.Chen Y.Chen Y.Q.Chen H.Y.Cheng J.Cheng S.Cheng T.G.Cheng J.P.Dai L.Y.Dai X.C.Dai D.Dedovich A.Denig I.Denisenko J.M.Dias D.Z.Ding L.Y.Dong W.H.Dong V.Druzhinin D.S.Du Y.J.Du Z.G.Du L.M.Duan D.Epifanov Y.L.Fan S.S.Fang Z.J.Fang G.Fedotovich C.Q.Feng X.Feng Y.T.Feng J.L.Fu J.Gao Y.N.Gao P.S.Ge C.Q.Geng L.S.Geng A.Gilman L.Gong T.Gong B.Gou W.Gradl J.L.Gu A.Guevara L.C.Gui A.Q.Guo F.K.Guo J.C.Guo J.Guo Y.P.Guo Z.H.Guo A.Guskov K.L.Han L.Han M.Han X.Q.Hao J.B.He S.Q.He X.G.He Y.L.He Z.B.He Z.X.Heng B.L.Hou T.J.Hou Y.R.Hou C.Y.Hu H.M.Hu K.Hu R.J.Hu W.H.Hu X.H.Hu Y.C.Hu J.Hua G.S.Huang J.S.Huang M.Huang Q.Y.Huang W.Q.Huang X.T.Huang X.J.Huang Y.B.Huang Y.S.Huang N.Hüsken V.Ivanov Q.P.Ji J.J.Jia S.Jia Z.K.Jia H.B.Jiang J.Jiang S.Z.Jiang J.B.Jiao Z.Jiao H.J.Jing X.L.Kang X.S.Kang B.C.Ke M.Kenzie A.Khoukaz I.Koop E.Kravchenko A.Kuzmin Y.Lei E.Levichev C.H.Li C.Li D.Y.Li F.Li G.Li G.Li H.B.Li H.Li H.N.Li H.J.Li H.L.Li J.M.Li J.Li L.Li L.Li L.Y.Li N.Li P.R.Li R.H.Li S.Li T.Li W.J.Li X.Li X.H.Li X.Q.Li X.H.Li Y.Li Y.Y.Li Z.J.Li H.Liang J.H.Liang Y.T.Liang G.R.Liao L.Z.Liao Y.Liao C.X.Lin D.X.Lin X.S.Lin B.J.Liu C.W.Liu D.Liu F.Liu G.M.Liu H.B.Liu J.Liu J.J.Liu J.B.Liu K.Liu K.Y.Liu K.Liu L.Liu Q.Liu S.B.Liu T.Liu X.Liu Y.W.Liu Y.Liu Y.L.Liu Z.Q.Liu Z.Y.Liu Z.W.Liu I.Logashenko Y.Long C.G.Lu J.X.Lu N.Lu Q.F.Lü Y.Lu Y.Lu Z.Lu P.Lukin F.J.Luo T.Luo X.F.Luo Y.H.Luo H.J.Lyu X.R.Lyu J.P.Ma P.Ma Y.Ma Y.M.Ma F.Maas S.Malde D.Matvienko Z.X.Meng R.Mitchell A.Nefediev Y.Nefedov S.L.Olsen Q.Ouyang P.Pakhlov G.Pakhlova X.Pan Y.Pan E.Passemar Y.P.Pei H.P.Peng L.Peng X.Y.Peng X.J.Peng K.Peters S.Pivovarov E.Pyata B.B.Qi Y.Q.Qi W.B.Qian Y.Qian C.F.Qiao J.J.Qin J.J.Qin L.Q.Qin X.S.Qin T.L.Qiu J.Rademacker C.F.Redmer H.Y.Sang M.Saur W.Shan X.Y.Shan L.L.Shang M.Shao L.Shekhtman C.P.Shen J.M.Shen Z.T.Shen H.C.Shi X.D.Shi B.Shwartz A.Sokolov J.J.Song W.M.Song Y.Song Y.X.Song A.Sukharev J.F.Sun L.Sun X.M.Sun Y.J.Sun Z.P.Sun J.Tang S.S.Tang Z.B.Tang C.H.Tian J.S.Tian Y.Tian Y.Tikhonov K.Todyshev T.Uglov V.Vorobyev B.D.Wan B.L.Wang B.Wang D.Y.Wang G.Y.Wang G.L.Wang H.L.Wang J.Wang J.H.Wang J.C.Wang M.L.Wang R.Wang R.Wang S.B.Wang W.Wang W.P.Wang X.C.Wang X.D.Wang X.L.Wang X.L.Wang X.P.Wang X.F.Wang Y.D.Wang Y.P.Wang Y.Q.Wang Y.L.Wang Y.G.Wang Z.Y.Wang Z.Y.Wang Z.L.Wang Z.G.Wang D.H.Wei X.L.Wei X.M.Wei Q.G.Wen X.J.Wen G.Wilkinson B.Wu J.J.Wu L.Wu P.Wu T.W.Wu Y.S.Wu L.Xia T.Xiang C.W.Xiao D.Xiao M.Xiao K.P.Xie Y.H.Xie Y.Xing Z.Z.Xing X.N.Xiong F.R.Xu J.Xu L.L.Xu Q.N.Xu X.C.Xu X.P.Xu Y.C.Xu Y.P.Xu Y.Xu Z.Z.Xu D.W.Xuan F.F.Xue L.Yan M.J.Yan W.B.Yan W.C.Yan X.S.Yan B.F.Yang C.Yang H.J.Yang H.R.Yang H.T.Yang J.F.Yang S.L.Yang Y.D.Yang Y.H.Yang Y.S.Yang Y.L.Yang Z.W.Yang Z.Y.Yang D.L.Yao H.Yin X.H.Yin N.Yokozaki S.Y.You Z.Y.You C.X.Yu F.S.Yu G.L.Yu H.L.Yu J.S.Yu J.Q.Yu L.Yuan X.B.Yuan Z.Y.Yuan Y.F.Yue M.Zeng S.Zeng A.L.Zhang B.W.Zhang G.Y.Zhang G.Q.Zhang H.J.Zhang H.B.Zhang J.Y.Zhang J.L.Zhang J.Zhang L.Zhang L.M.Zhang Q.A.Zhang R.Zhang S.L.Zhang T.Zhang X.Zhang Y.Zhang Y.J.Zhang Y.X.Zhang Y.T.Zhang Y.F.Zhang Y.C.Zhang Y.Zhang Y.Zhang Y.M.Zhang Y.L.Zhang Z.H.Zhang Z.Y.Zhang Z.Y.Zhang H.Y.Zhao J.Zhao L.Zhao M.G.Zhao Q.Zhao R.G.Zhao R.P.Zhao Y.X.Zhao Z.G.Zhao Z.X.Zhao A.Zhemchugov B.Zheng L.Zheng Q.B.Zheng R.Zheng Y.H.Zheng X.H.Zhong H.J.Zhou H.Q.Zhou H.Zhou S.H.Zhou X.Zhou X.K.Zhou X.P.Zhou X.R.Zhou Y.L.Zhou Y.Zhou Y.X.Zhou Z.Y.Zhou J.Y.Zhu K.Zhu R.D.Zhu R.L.Zhu S.H.Zhu Y.C.Zhu Z.A.Zhu V.Zhukova V.Zhulanov B.S.Zou Y.B.Zuo 2024Frontiers of physics2024,19,1:0
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