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| 1 | 运用RAPD技术鉴定澳大利亚油橄榄品种的研究显示文摘由于早期引种记录的丢失、栽培品种的错命名和重命名、品种间的杂交等原因,澳洲现有的油橄榄品种形态变化较大,同名异物和同物异名现象比较普遍,使品种间的鉴定十分困难.运用随机扩增多态DNA技术,在筛选引物的基础上,分别对2种待鉴定样品和9个已知油橄榄品种的RAPD指纹进行比较分析,经UPG-MA聚类分析,在鉴定待测样品上取得了理想效果. | 马万里 G.Collins | 2006 | 内蒙古师范大学学报(自然科学汉文版)2006，35，3： | 15 |
| 2 | 用RT-PCR技术检测澳大利亚杏仁树李坏死环斑病毒显示文摘用RT-PCR技术检测澳大利亚杏仁树李坏死坏斑病毒,对92个待测样品的病毒RNA进行扩增和检测,其中有79个呈阳性,表明检验样品的染病率较高.RT-PCR技术检测病毒的方法灵敏、准确,是检测苗木是否感染病毒的有效方法之一. | 马万里 G.T.Mekuria M.Wirthensohn G.Collins | 2005 | 内蒙古师范大学学报(自然科学汉文版)2005，34，2： | 2 |
| 3 | Monocytic TNFα secretion patterns in IDDM patients with periodontal diseases*显示文摘 | Giovanni E.Salvi John G.Collins BehnazYalda Roland R.Arnold Niklaus P.Lang StevenOffenbacher | 2005 | Journal of Clinical Periodontology2005，，1： | 1 |
| 4 | HIGH EPITAXIAL FERROELECTRIC RELAXOR Mn-DOPED Ba(Zr,Ti)O_(3) THIN FILMS ON MgO SUBSTRATES显示文摘Environment friendly ferroelectric relaxor Ba(Zr_(0.2)Ti_(0.8))O_(3)thin fims with the addition of 2%Mn dopant were grown on(001)MgO substrates by pulsed laser deposition.Microstructure studies with X-ray di®raction and transmission electron microscopy reveal that the as-grown Ba(Zr_(0.2)Ti_(0.8))O_(3) thin films are c-axis oriented with an atomic sharp interface.The films have good single crystallinity and good epitaxial quality.The interface relationship was determined to be[100]Mn.BZT//[100]MgO and(001)Mn.BZT//(001)MgO.Nanoscale order/disorder relaxor structures were found with nano-columnar structures.The microwave dielectric measurements(15-18GHz)indicate that the¯lms have excellent dielectric properties with large dielectric constant value,high tunability,and low dielectric loss,promising the development of room temperature tunable microwave elements. | M.LIU J.LIU G.COLLINS C.R.MA C.L.CHEN A.D.ALEMAYEHU G.SUBRAMANYAM C.DAI Y.LIN J.HE J.C.JIANG E.I.MELETIS A.BHALLA Q.Y.ZHANG | 2011 | Journal of Advanced Dielectrics2011，1，4： | 0 |
| 5 | COMPETING REACTIONS OF EXISTING Ni SILICIDE AND Ni OR Si INDUCED BY THERMAL ANNEALING AND MeV Si ION BEAM MIXING显示文摘The competing reactions between existing Ni silicides surrounded by Si and Ni were investigated by thermal annealing and MeV Si ion beam mixing. With high energy irradiation, the energy deposition at both interfaces, Ni/Ni silicide and Ni silicide/Si, is equal. Two MeV He^- RBS and TEM were used to obtain the reacted layer composition and epitaxial orientation, respectively. Also glancing angle Co K_a. X-ray diffraction was utilized to identify phase formation. The main results indicate that the existing silicides preferentially react with Ni layer, and that there are pronounced differences of Ni silicide phase transition between thermal annealing and MeV Si ion beam mixing, even though the mixing was performed in radiation enhanced diffusion regime. The results can be explained in term of the heat of silicide formation and surface energy change. | 朱德彰 M.C.Ridgway R.G.Elliman J.S.Williams G.Collins | 1993 | Nuclear Science and Techniques1993，4，3： | 0 |
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