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		题名	作者	年代	出处	被引量
	1	HIGH EPITAXIAL FERROELECTRIC RELAXOR Mn-DOPED Ba(Zr,Ti)O_(3) THIN FILMS ON MgO SUBSTRATES显示文摘Environment friendly ferroelectric relaxor Ba(Zr_(0.2)Ti_(0.8))O_(3)thin fims with the addition of 2%Mn dopant were grown on(001)MgO substrates by pulsed laser deposition.Microstructure studies with X-ray di®raction and transmission electron microscopy reveal that the as-grown Ba(Zr_(0.2)Ti_(0.8))O_(3) thin films are c-axis oriented with an atomic sharp interface.The films have good single crystallinity and good epitaxial quality.The interface relationship was determined to be[100]Mn.BZT//[100]MgO and(001)Mn.BZT//(001)MgO.Nanoscale order/disorder relaxor structures were found with nano-columnar structures.The microwave dielectric measurements(15-18GHz)indicate that the¯lms have excellent dielectric properties with large dielectric constant value,high tunability,and low dielectric loss,promising the development of room temperature tunable microwave elements.	M.LIU J.LIU G.COLLINS C.R.MA C.L.CHEN A.D.ALEMAYEHU G.SUBRAMANYAM C.DAI Y.LIN J.HE J.C.JIANG E.I.MELETIS A.BHALLA Q.Y.ZHANG	2011	Journal of Advanced Dielectrics2011，1，4：	0

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