2篇
您的检索式：作者名="J.S.Williams"
|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | 测定离子注入单晶损伤与应变的双晶(n^v,-n^v)排列方法显示文摘依据双晶摇摆曲线的形成原理,提出了一种高分辨率,高灵敏度的测定离子注入单晶损伤与应变的双晶(n^v,—n^v)排列方法。考虑到掠入射情形的色散效应,对掠射角的选择进行了讨论。对Ga注入Si单晶样品的测定证实了(n^v—n^v)排列的优越性,摇摆曲线上得到了未曾见过的细微振荡。 | 李润身 H.K.Wagenfeld J.S.Williams Stephen Milkins Andrew Stevenson | 1990 | Journal of Semiconductors1990，11，1： | 2 |
| 2 | COMPETING REACTIONS OF EXISTING Ni SILICIDE AND Ni OR Si INDUCED BY THERMAL ANNEALING AND MeV Si ION BEAM MIXING显示文摘The competing reactions between existing Ni silicides surrounded by Si and Ni were investigated by thermal annealing and MeV Si ion beam mixing. With high energy irradiation, the energy deposition at both interfaces, Ni/Ni silicide and Ni silicide/Si, is equal. Two MeV He^- RBS and TEM were used to obtain the reacted layer composition and epitaxial orientation, respectively. Also glancing angle Co K_a. X-ray diffraction was utilized to identify phase formation. The main results indicate that the existing silicides preferentially react with Ni layer, and that there are pronounced differences of Ni silicide phase transition between thermal annealing and MeV Si ion beam mixing, even though the mixing was performed in radiation enhanced diffusion regime. The results can be explained in term of the heat of silicide formation and surface energy change. | 朱德彰 M.C.Ridgway R.G.Elliman J.S.Williams G.Collins | 1993 | Nuclear Science and Techniques1993，4，3： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员