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您的检索式：作者名="R.G.Elliman"
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| 1 | P_2^+和P^+注入硅固相外延过程时间分辨的反射率研究显示文摘本文以时间分辨的反射率测量结合背散射和沟道分析、透射电子显微镜分析,比较和研究了在77K温度下180keV,1×10^(14)/cm^2P_2^+ 和90KeV,2×10^(14)/cm^2P^+注入硅于550℃退火时的固相外延过程。发现了P_2^+,P^+注入硅样品的固相外延过程具有不同的特征。这种差异是由于P_2^+和P^+在硅中引入不同的损伤造成的。P^+注入的硅样品测量得到的时间分辨的反射谱是反常的。这种反常谱可用样品退火时从表面层到非晶硅层与从衬底到非晶硅层的双向外延的过程给出满意的解释。 | 方子韦 林成鲁 杨根庆 李晓勤 邹世昌 R.G.ELLIMAN | 1990 | 物理学报1990，39，7： | 1 |
| 2 | COMPETING REACTIONS OF EXISTING Ni SILICIDE AND Ni OR Si INDUCED BY THERMAL ANNEALING AND MeV Si ION BEAM MIXING显示文摘The competing reactions between existing Ni silicides surrounded by Si and Ni were investigated by thermal annealing and MeV Si ion beam mixing. With high energy irradiation, the energy deposition at both interfaces, Ni/Ni silicide and Ni silicide/Si, is equal. Two MeV He^- RBS and TEM were used to obtain the reacted layer composition and epitaxial orientation, respectively. Also glancing angle Co K_a. X-ray diffraction was utilized to identify phase formation. The main results indicate that the existing silicides preferentially react with Ni layer, and that there are pronounced differences of Ni silicide phase transition between thermal annealing and MeV Si ion beam mixing, even though the mixing was performed in radiation enhanced diffusion regime. The results can be explained in term of the heat of silicide formation and surface energy change. | 朱德彰 M.C.Ridgway R.G.Elliman J.S.Williams G.Collins | 1993 | Nuclear Science and Techniques1993，4，3： | 0 |
| 3 | 硅中分子离子注入的损伤增强效应显示文摘本文研究了单晶硅中磷分子离子(P_2^+)注入相对于磷原子离子(P^+)注入的损伤增强效应,系统分析了这种损伤增强效应与注入剂量、能量、靶温的关系以及注入后退火的特征,利用我们提出的离子注入时分子离子与靶原子的多体碰撞模型对其物理机制进行了讨论. | 林成鲁 杨根庆 方子韦 李晓勤 邹世昌 J.Gyulai R.G.Elliman | 1992 | 中国科学(A辑)1992，23，7： | 0 |
| 4 | Damage Enhancement Effect in Silicon Implanted With Molecular Ions显示文摘This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P2+ molecular ions and P+ atomic ions. The dependence of damage enhancement effect of P2+ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect. | 林成鲁 杨根庆 方子韦 李晓勤 邹世昌 J.Gyulai R.G.Elliman | 1993 | Science China Mathematics1993，36，2： | 0 |
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