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| 1 | EFFECTS OF TREATMENT TEMPERATURE ON THE MICROSTRUCTURE AND MAGNETIC PROPERTIES OF Fe-N THIN FILMS显示文摘Fe-N thin films were fabricated on both 100Si and NaCl substrates by RF magnetron sputtering under low nitrogen partial pressure. The microstructure and magnetic properties of Fe-N thin films were investigated with the increase of the substrate temperature (Ts) and the annealing temperature (Ta). It is more difficult for nitrogen atoms to enter the Fe lattice under higher Ts above 150℃. The phase evolution is visible at higher Ta above 200℃. The phase transformation of α''-Fe16N2 occurred at 400℃. The change of crystal size with Ta was clearly visible from bright and dark field images. The clear high-resolution electron microscope (HREM) images of 110α, 111γ', 112α'', and 200α'' phases were observed. The interplanar distances from TEM (transmission electron microscope) and HREM match the calculated values very well. From the results of the vibrating sample magnetometer (VSM), the good magnetic properties of Fe-N films were obtained at 150℃ of Ts and 200℃ of Ta, respectively. | B.L. Li H.M. Du X.F. Wang E.Y. Jiang Z.Q.Li P. Wu | 2007 | Acta Metallurgica Sinica(English Letters)2007，20，4： | 1 |
| 2 | FABRICATION AND PROPERTIES OF CERAMIC -CEMENTED CARBIDE COMPACT INSERTS显示文摘A novel ceramic cemented carbide compact insert was developed using hot pressing sintering technique. The surface layers of the sandwich material were ceramic and the middle layer was cemented carbide. The factors that affect the properties of the compact insert were analyzed. Theoretical analyses and experiments indicated that the cemented carbide with greater elastic module and thermal expansion coefficient than ceramic should be used in the sandwich material in order to get high equivalent flexure strength and the geometric parameters of the compact insert are also important to its properties. | J.Q.Zhou,X.Ai,Z.Q.Li and C.Z.Huang Institute of Mechanical Engineering, Shandong University of Technology, Jinan 250061, China | 1999 | Acta Metallurgica Sinica(English Letters)1999，12，5： | 0 |
| 3 | 固态vander WaalsC _(60)膜晶格的Coulomb膨胀显示文摘利用扫描隧道显微镜观测到生长在GaAs(0 0 1 ) 2× 4表面上的固态vanderWaalsC6 0 膜在室温下较之C6 0 晶体具有 1 3%的晶格膨胀 .这种膨胀是由从GaAs衬底饱和的As悬挂键上转移到C6 0 分子上的电荷之间的Coulomb作用引起的 .理论计算表明 ,平均约有 1 76个电子转移到每个C6 0 分子上 .有趣的是 ,该固态C6 0 膜为 (1 1 0 )取向 ,这明显不同于生长于其他半导体或金属表面上的具有 (1 1 1 )取向的六角密排C6 0 膜 .这种反常取向的薄膜是由GaAs衬底的各向异性产生的一维限制作用导致的 .通过选择不同的衬底 ,可以控制C6 0 | 薛其坤 厉建龙 孙牧 陆华 T.Hashizume Y.Ling Y.Hasegawa K.Ohno Z.Q.Li Y.Kawazoe T.Sakurai H.Kamiyama H.Shinohara | 2000 | 中国科学(A辑)2000，30，6： | 0 |
| 4 | THE INTERFACE OF TERNARY-BORIDE-BASED HARD CLADDING MATERIAL显示文摘The interfacial microstructure of ternary-boride-based hard cladding material (YF2) has been studied using scanning electron microanalyser (SEM), X-ray diffraction (XRD) and energy disperse spectroscopy (EDS). Results show that there are chemical reactions and elements diffusion in the interfacial zone, which make the interface bonding well and bonding strength ideal at the interface. The results gotten by studying of crack produced by Vickers indentation technique in the interfacial zone show that it is difficult to produce crack in the interface, the crack length in the cladding layer is longer than that to the interface, the crack which propagate to the interface stops at the interface rather than propagates along the interface. This suggests negligible residual stresses have developed because of thermal expansion mismatch. The bonding strength of the interface is 550MPa, which has been gotten by cutting test. The result gotten by analyzing the fracture surface shows that the fracture occurs at the side of cladding layer, which confirms that the bonding strength at the interface is higher than that in the cladding layer. | Y.G.Wang Z.Q.Li D.Zhang | 2004 | Acta Metallurgica Sinica(English Letters)2004，17，1： | 0 |
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