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| 1 | Research progresses on Cherenkov and transit-time high-power microwave sources at NUDT显示文摘Research progresses on Cherenkov and transit-time high-power microwave(HPM)sources in National University of Defense Technology(NUDT)of China are presented.The research issues are focused on the following aspects.The pulse-shortening phenomenon in O-type Cerenkov HPM devices is suppressed.The compact coaxial relativistic backward-wave oscillators(RBWOs)at low bands are developed.The power efficiency in M-Type HPM tubes without guiding magnetic field increased.The power capacities and power efficiencies in the triaxial klystron amplifier(TKA)and relativistic transit-time oscillator(TTO)at higher frequencies increased.In experiments,some exciting results were obtained.The X-band source generated 2 GW microwave power with a pulse duration of 110 ns in 30 Hz repetition mode.Both L-and P-band compact RBWOs generated over 2 GW microwave power with a power efficiency of over 30%.There is approximately a 75% decline of the volume compared with that of conventional RBWO under the same power capacity conditions.A 1.755 GHz MILO produced 3.1 GW microwave power with power efficiency of 10.4%.A 9.37 GHz TKA produced the 240 MW microwave power with the gain of 34 dB.A 14.3 GHz TTO produced 1 GW microwave power with power efficiency of 20%. | Jiande Zhang Xingjun Ge Jun Zhang Juntao He Yuwei Fan Zhiqiang Li Zhenxing Jin Liang Gao Junpu Ling Zumin Qi | 2016 | Matter and Radiation at Extremes2016，1，3： | 7 |
| 2 | Recent progress of integrated circuits and optoelectronic chips显示文摘Integrated circuits(ICs)and optoelectronic chips are the foundation stones of the modern information society.The IC industry has been driven by the so-called'Moore's law'in the past 60 years,and now has entered the post Moore's law era.In this paper,we review the recent progress of ICs and optoelectronic chips.The research status,technical challenges and development trend of devices,chips and integrated technologies of typical IC and optoelectronic chips are focused on.The main contents include the development law of IC and optoelectronic chip technology,the IC design and processing technology,emerging memory and chip architecture,brain-like chip structure and its mechanism,heterogeneous integration,quantum chip technology,silicon photonics chip technology,integrated microwave photonic chip,and optoelectronic hybrid integrated chip. | Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI | 2021 | Science China(Information Sciences)2021，64，10： | 7 |
| 3 | Seismic response analysis of continuous rigid frame bridge considering canyon topography effects under incident SV waves显示文摘To evaluate the importance of the canyon topography effects on large structures, based on a rigid frame bridge across a 137-m-deep and 600-m-wide canyon, the seismic response of the canyon site is analyzed using a two-dimensional finite element model under different seismic SV waves with the assumptions of vertical incidence and oblique incidence to obtain the ground motions, which are used as the excitation input on the pier foundations of the bridge with improved large mass method. The results indicate that canyon topography has significant influences on the ground motions in terms of incident angle. The peak ground acceleration values vary greatly from the bottom of the canyon to the upper corners. Under vertical incident SV waves, at the upper corners of canyon the peak ground accelerations greatly increase; whereas the peak ground accelerations diminish at the bottom corners of canyon. Under oblique incident SV waves, the shaking of the canyon slope perpendicular to the incidence direction is much more severe than that of the opposite side of canyon. And the ground surface has been characterized by larger deformations in the case of oblique incident waves. It is also concluded that the low piers and frame of the continuous rigid frame bridge are more sensitive to the multi-support seismic excitations than the flexible high piers. The canyon topography as well as the oblique incidence of the waves brings the continuous rigid frame bridge severe responses, which should be taken into account in bridge design. | Guoliang Zhou Xiaojun Li Xingjun Qi | 2010 | Earthquake Science2010，23，1： | 7 |
| 4 | A flexible solid polymer electrolyte enabled with lithiated zeolite for high performance lithium battery显示文摘Solid-state lithium batteries using composite polymer electrolytes(CPEs)have attracted much attention owing to their higher safety compared to liquid electrolytes and flexibility compared to ceramic electrolytes.However,their unsatisfactory lithium-ion conductivity still limits their development.Herein,a high ion conductive CPE with multiple continuous lithium pathways is designed.This new electrolyte consists of poly(vinylidene fluorideco-hexafluoropropylene)(PVDF-HFP)and lithiated X type zeolite(Li-X),which possesses a high ionic conductivity(1.98×10^(-4)S/cm),high lithium transference number(t_(Li^(+))=0.55),wide electrochemical window(4.7 V),and excellent stability against the lithium anode.Density functional theory(DFT)calculation confirms that the Lewis acid sites in zeolite can graft with N,N-dimethylformamide(DMF)and PVDF-HFP chains,resulting in decreased crystallinity of polymer and providing rapid Li+transmission channels.When used in a full cell,the solid Li|Li-X-3%|LiFePO_(4) cell displays excellent cycling stability and rate performance at room temperature and 60℃.Furthermore,pouch cells with the Li-X-3%electrolyte exhibit brilliant safety under extreme conditions,such as folding and cutting.Thus,this proposed zeolite-PVDF-HFP CPE represents a promising potential in the application of making a safer,higher performing,and flexible solid-state lithium battery. | Zhiyu Ding Qiming Tang Qi Zhang Penghui Yao Xingjun Liu Junwei Wu | 2023 | Nano Research2023，16，7： | 0 |
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