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64篇 您的检索式:作者名="Willander M"
    题名 作者 年代 出处 被引量
1QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR-Ⅱ ELECTRICAL ASPECTS显示文摘A complete quantum mechanical model for GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) was presented. The photocurrent was investigated by the optical transition(absorption coefficient)between the ground state and the excited states due to the nonzero component of the radiation field along the sample growth direction. By studying the inter diffusion of the Al atoms across the GaAs/AlGaAs heterointer faces, the mobility of the drift diffusion carriers in the excited states was calculated. As a result, the measurement results of the dark current and the photocurrent spectra are explained theoretically.Fu Y Willander M LU W 2002红外与毫米波学报2002,21,6:4
2QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTO-DETECTOR-ⅠOPTICAL ASPECTS显示文摘A complete quantum mechanical model for GaAs?AlGaAs quantum well infrared photodetectors(QWIPs) is presented here. The model consisted of four parts: (1) Starting with the description of the electromagnetic field of the infrared radiation in the QWIP, effective component of the vector potential <| A z |> along the QWIP growth direction ( z axis) due to the optical diffraction grating was calculated. (2) From the wave transmissions and the occupations of the electronic states, it was discussed that the dark current in the QWIP is determined by the drift diffusion current of carriers thermally excited from the ground sublevel in the quantum well to extended states above the barrier. (3) The photocurrent was investigated by the optical transition (absorption coefficient between the ground state to excited states due to the nonzero <| A z |> ). (4) By studying the inter diffusion of the Al atoms across the GaAs?AlGaAs heterointerfaces,the mobility of the drift diffusion carriers in the excited states was calculated, so the measurement results of the dark current and photocurrent spectra can be explained theoretically. With the complete quantum mechanical descriptions of (1 4), QWIP device design and optimization are possible.Fu Y Willander M Li Ning Lu W 2002红外与毫米波学报2002,21,5:2
3Solid and soft nano -structured materials:Fundamentals and applications 显示文摘WILLANDER M NUR O LOZOVIK Yu E 2005Micro electronics Journal2005,,7:1
4Electrical muscle stimulation after immediate nerve repair reduces muscle atrophy without affecting reinnervation显示文摘Willand MP Holmes M Bain JR 2013Muscle Nerve2013,48,2:1
5Annealing Effects on Optical Properties of Low Temperature Grown ZnO Nanorod Arrays 显示文摘YANG Li-li ZHAO Qing-xiang Willander M 2009J Appl phys2009,105,05:1
6查看详情显示文摘Israr M Q Sadaf J R Asif M H Nur O Willander M Danielsson B 0,,03:1
7High-resolution structure of a BRICHOS domain and its implications for anti-amyloid chaperone activity on lung suffactant protein C显示文摘Willander H Askarieh G Landreh M 2012Proc Natl Acad Sci U S A2012,109,7:1
8Ⅲ-nitrides: growth, characterization, and properties显示文摘JAIN S C WILLANDER M NARAYAN J 2000Appl Phys2000,87,:1
9Effective Way to Control the Size of Well-Aligned ZnO Nanorod Arrays with Two-Step Chemical Bath Deposition 显示文摘YANG Li-li ZHAO Qing-xiang Willander M 2009Journal of Crystal Growth2009,311,4:1
10Ⅲ- nitrides: growth, characterization, and properties 显示文摘JAIN S C WILLANDER M NARAYAN J 2000Journal of Applied Physics2000,87,3:1
11Synthesis and Characterization of ZnO Nanostructures Grown on Si Substrates显示文摘Zhao Q X Klason P Willander M 2006Phys Scr2006,126,:1
12Ⅲ-nitrides:growth,characterization,and properties显示文摘Jain S C Willander M Narayan J Overstraeten R V 0,,03:1
13Limits on downsizing in spark ignition engines due to pre-ignition显示文摘Willand J Daniel M Geringer E B 2009MTZ2009,70,5:1
14Ⅲ-nitrides:growth,characterization,and properties显示文摘JAIN S C WILLANDER M NARAYAN J 2000J Appl Phys2000,87,97:1
15Selective calcium ion detection with functionalized ZnO nanorods-extended gate MOSFET 显示文摘ASIF M H NUR O WILLANDER M DANIELSSON B 2009Biosensors and Bioelectronics2009,24,11:1
16Conduction modeling of a conductive adhesive with bimodal distribution of conducting element 显示文摘FU Y LIU J WILLANDER M 1999International Journal of Adhesion & Adhesives1999,,19:1
17Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors 显示文摘JAIN S C WILLANDER M MAES H 1996Semiconductor Science and Technology1996,11,5:1
18Statistics of electric conductance through anisotropically conductive adhesive显示文摘FU Y WILLANDER M LIU J H 2001IEEE Transactions on Components and Packaging Tech- nologies2001,24,2:1
19Energy band diagrams of nano-size field-effect transistors显示文摘Fu Y Willander M 1996Surface Science1996,361,:1
20ill-nitrides: growth, characterization and properties显示文摘Jain S C Willander M NarayanJ et ai 2000J Appl Phys2000,87,3:1
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