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37篇 您的检索式：作者名="Stesmans"

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	题名	作者	年代	出处	被引量
1	Vibrational properties of silicene and germanene显示文摘	Emilio Scalise Michel Houssa Geoffrey Pourtois B. van den Broek Valery Afanas'ev andAndr Stesmans	2013	Nano Research2013，6，1：	5
2	Topological to trivial insulating phase transition in stanene显示文摘stanene 的电子性质, graphene 的 Sn 对应物理论上用第一原则的模拟被学习。对一个 out-of-plane 电场或由量监禁效果导致的小绝缘阶段转变拓扑被预言。结果加亮潜力在门电压使用 stanene nanoribbons 控制了无驱散的基于纺纱的设备并且被用来将最小的 nanoribbon 宽度放为如此的设备,它典型地是约 5 nm。	Michel Houssa Bas van den Broek Konstantina Iordanidou Anh Khoa Augustin Lu Geoffrey Pourtois Jean-Pierre Locquet Valery Afanas'ev Andre Stesmans	2016	Nano Research2016，9，3：	2
3	Defects induced in fused silica by high fluence ultraviolet laser pulses at 355 nm显示文摘	Stevens-Kalceff M A Stesmans A Joe Wong	2002	Applied Physics Letters2002，80，5：	1
4	Internal photoemission of electrons and holes from (100) Si into HfO2 显示文摘	AFANAWEV V V STESMANS A CHEN F	2002	Applied Physics Letters2002，，6：	1
5	Variation in the fixed charge density of SiO2/ZrO2 gate dielectric stacks during postdeposition oxidation显示文摘	Houssa M Afanas ev V V Stesmans A	2000	Applied Physics Letters2000，77，：	1
6	Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation显示文摘	AFANAS'EV V V STESMANS A	2003	Appl Phys Lett2003，82，4：	1
7	Classification and control of the origin of photoluminescence from Si nanocrystals显示文摘	Godefroo S Hayne M Jivanescu M Stesmans A Zacharias M Lebedev O I Van Yendeloo G Moshchalkov V V		0，，03：	1
8	Observation of carbon clusters at the 4H-SiC/SiO2 interface显示文摘	Afanas'ev V V Stesmans A Harris C I	1998	Mater Sci Forum1998，1998，：	1
9	Trap-assisted tunneling in high permittivity gate dielectric stacks 显示文摘	HOUSSA M TUOMINEN M NAILI M AFANAS'EV V STESMANS A HAUKKA S HEYNES M M	2000	J Appl Phys2000，87，：	1
10	Interface strain in thermal Si/SiO2 analyzed by frequency-dependent electron spin resonance显示文摘	Pierreux D Stesmans A	2001	Physica B2001，，：	1
11	Structural degradation of thermal SiO2 on Si by high-temperature annealing: Defect generation显示文摘	Stesmans A Nouwen B	2002	Phys Rev B2002，66，45：	1
12	Synthesis and characterization of sol-gel derived ZnS : Mn2+ nanocrystallites embedded in a silica matrix显示文摘	B. Bhattacharjee D. Ganguli K. IakoubovskII A. Stesmans S. Chaudhuri	2002	Bulletin of Materials Science2002，，3：	1
13	Polarity depen- dence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks 显示文摘	Afanas'ev V V Stesmans A	2001	Appl Phys Lett2001，79，：	1
14	显示文摘	Afanas'ef Stesmans A	2000	Appl Phys Lett2000，77，12：	1
15	Towards single grain ESR dating of sedimentary quartz:First results显示文摘	BEERTEN K PIERREUX D STESMANS A	2003	Quaternary Science Reviews2003，22，：	1
16	Defects induced in fused silica by high fluence ultraviolet laser pulses at 355 nm显示文摘	Stevens-Kalceff M A Stesmans A Wong J	2002	Applied Physics Letters2002，80，5：	1
17	Electron energy barriers between (100) Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators显示文摘	Afanas'ev V V Houssa M Stesmans A	2001	Applied Physics Letters2001，78，20：	1
18	Vibrational properties of epitaxial silicene layers on (111) Ag显示文摘	E. Scalise E. Cinquanta M. Houssa B. van den Broek D. Chiappe C. Grazianetti G. Pourtois B. Ealet A. Molle M. Fanciulli V.V. Afanas’ev A. Stesmans	2013	Applied Surface Science2013，，：	1
19	Energy band alignment at the (100) Ge/HfO2 interface显示文摘	AFANAS'EV V V STESMANS A	2004	Appl Phys Lett2004，84，13：	1
20	Variation in the Fixed Charge Density of SiOx/ZrO2 Gate Dielectric Stacks during Postdeposition Oxidation 显示文摘	Houssa M Afanas'ev V V Stesmans A	2000	Applied Physics Letters2000，77，：	1

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