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30篇 您的检索式：作者名="STESMANS A"

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	题名	作者	年代	出处	被引量
1	Defects induced in fused silica by high fluence ultraviolet laser pulses at 355 nm显示文摘	Stevens-Kalceff M A Stesmans A Joe Wong	2002	Applied Physics Letters2002，80，5：	1
2	Internal photoemission of electrons and holes from (100) Si into HfO2 显示文摘	AFANAWEV V V STESMANS A CHEN F	2002	Applied Physics Letters2002，，6：	1
3	Variation in the fixed charge density of SiO2/ZrO2 gate dielectric stacks during postdeposition oxidation显示文摘	Houssa M Afanas ev V V Stesmans A	2000	Applied Physics Letters2000，77，：	1
4	Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation显示文摘	AFANAS'EV V V STESMANS A	2003	Appl Phys Lett2003，82，4：	1
5	Classification and control of the origin of photoluminescence from Si nanocrystals显示文摘	Godefroo S Hayne M Jivanescu M Stesmans A Zacharias M Lebedev O I Van Yendeloo G Moshchalkov V V		0，，03：	1
6	Observation of carbon clusters at the 4H-SiC/SiO2 interface显示文摘	Afanas'ev V V Stesmans A Harris C I	1998	Mater Sci Forum1998，1998，：	1
7	Trap-assisted tunneling in high permittivity gate dielectric stacks 显示文摘	HOUSSA M TUOMINEN M NAILI M AFANAS'EV V STESMANS A HAUKKA S HEYNES M M	2000	J Appl Phys2000，87，：	1
8	Interface strain in thermal Si/SiO2 analyzed by frequency-dependent electron spin resonance显示文摘	Pierreux D Stesmans A	2001	Physica B2001，，：	1
9	Structural degradation of thermal SiO2 on Si by high-temperature annealing: Defect generation显示文摘	Stesmans A Nouwen B	2002	Phys Rev B2002，66，45：	1
10	Polarity depen- dence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks 显示文摘	Afanas'ev V V Stesmans A	2001	Appl Phys Lett2001，79，：	1
11	显示文摘	Afanas'ef Stesmans A	2000	Appl Phys Lett2000，77，12：	1
12	Towards single grain ESR dating of sedimentary quartz:First results显示文摘	BEERTEN K PIERREUX D STESMANS A	2003	Quaternary Science Reviews2003，22，：	1
13	Defects induced in fused silica by high fluence ultraviolet laser pulses at 355 nm显示文摘	Stevens-Kalceff M A Stesmans A Wong J	2002	Applied Physics Letters2002，80，5：	1
14	Electron energy barriers between (100) Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators显示文摘	Afanas'ev V V Houssa M Stesmans A	2001	Applied Physics Letters2001，78，20：	1
15	Energy band alignment at the (100) Ge/HfO2 interface显示文摘	AFANAS'EV V V STESMANS A	2004	Appl Phys Lett2004，84，13：	1
16	Variation in the Fixed Charge Density of SiOx/ZrO2 Gate Dielectric Stacks during Postdeposition Oxidation 显示文摘	Houssa M Afanas'ev V V Stesmans A	2000	Applied Physics Letters2000，77，：	1
17	Defects induced in fused silica by high fluence ultraviolet laser pulses at 355 nm显示文摘	Stevens Kalceff M A Stesmans A Wong J	2002	Appl Phys Lett2002，80，：	1
18	Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks 显示文摘	HOUSSA M AUTRAN J L STESMANS A	2002	Appl Phys Lett2002，81，4：	1
19	Internal photoemission at interfaces of high-k insulators with semiconductors and metals显示文摘	AFANAS'EV V V STESMANS A	2007	Journal of Applied Physics2007，102，8：	1
20	Natural intrinsic EX center inthermal SiO2 on Si:^17O hyperfine interaction 显示文摘	Stesmans A Scheerlinck F	1994	Phys Rev B1994，5，：	1

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