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29篇 您的检索式：作者名="HOUSSA M"

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	题名	作者	年代	出处	被引量
1	Molecular dynamics study of the structure and thermophysical properties of model sI clathrate hydrates显示文摘	CHIALVO A A HOUSSA M CUMMINGS P T	2002	The Journal of Physical Chemistry B2002，106，2：	1
2	Variation in the fixed charge density of SiO2/ZrO2 gate dielectric stacks during postdeposition oxidation显示文摘	Houssa M Afanas ev V V Stesmans A	2000	Applied Physics Letters2000，77，：	1
3	Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide 显示文摘	DELABIE A BELLENGER F HOUSSA M	2007	Appl Phys Lett2007，91，08：	1
4	Electrical properties of high-k gate dielectrics: Challenges, current issues, and possible solutions 显示文摘	Houssa M Pantisano L Ragnarsson L A	2006	Materials Science & Engineering R2006，51，：	1
5	Trap-assisted tunneling in high permittivity gate dielectric stacks 显示文摘	HOUSSA M TUOMINEN M NAILI M AFANAS'EV V STESMANS A HAUKKA S HEYNES M M	2000	J Appl Phys2000，87，：	1
6	显示文摘	Naili M Bender H	2001	Semicond Sci Technol2001，16，：	1
7	Polarity depen- dence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks 显示文摘	Afanas'ev V V Stesmans A	2001	Appl Phys Lett2001，79，：	1
8	Upper digestive bleedings after cardiac surgery 显示文摘	Ait Houssa M Selkane C Moutaki Allah Y	2007	Ann Cardiol Angeiol ( Paris)2007，56，3：	1
9	显示文摘	Afanas'ef Stesmans A	2000	Appl Phys Lett2000，77，12：	1
10	显示文摘	Naili M Heyns M M	2001	J Appl Phys2001，89，1：	1
11	显示文摘	Tuominen M Naili M	2000	J Appl Phys2000，87，12：	1
12	Electron energy barriers between (100) Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators显示文摘	Afanas'ev V V Houssa M Stesmans A	2001	Applied Physics Letters2001，78，20：	1
13	Advanced cleaning for the growth of ultrathin gate oxide 显示文摘	MERTENS P W BEARDA T HOUSSA M	1999	Microelectronic Engineering1999，48，14：	1
14	显示文摘	Degraeve R Mertens P W	1999	J Appl Phys1999，86，11：	1
15	显示文摘	Mertens PW Heyns M M	2000	Solid-State E lectronics2000，44，：	1
16	Variation in the Fixed Charge Density of SiOx/ZrO2 Gate Dielectric Stacks during Postdeposition Oxidation 显示文摘	Houssa M Afanas'ev V V Stesmans A	2000	Applied Physics Letters2000，77，：	1
17	Electrical characteristics of Ge/GeOx (N)/HfO2 gate stacks 显示文摘	Houssa M Jaeger B D Delabie A	2005	Journal of Non-crystalllne Solids2005，351，：	1
18	Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide 显示文摘	DELABIE A BELLENGER F HOUSSA M	2007	Applied Physics Letters2007，91，8：	1
19	Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks 显示文摘	HOUSSA M AUTRAN J L STESMANS A	2002	Appl Phys Lett2002，81，4：	1
20	Advanced cleaning for the growth of ultrathin gate oxide显示文摘	MERTENS P W BEARDA T HOUSSA M	1999	Microelectronic Engineening1999，48，14：	1

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