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| 1 | Increased melatonin levels in aqueous humor of patients with proliferative retinopathy in type 2 diabetes mellitus显示文摘AIM: To report the association between melatonin levels in aqueous humor and serum, and diabetic retinopathy(DR) grade in type 2 diabetic patients.·METHODS: Aqueous humor and plasma samples from26 patients with DR(in nonproliferative and proliferative stages) and 14 control subjects were collected during cataract surgery after 6 p.m. Melatonin concentrations were determined using an enzyme-linked immunosorbent assay(ELISA).·RESULTS: Melatonin levels were significantly higher in the aqueous humor of patients with proliferative diabetic retinopathy(PDR) [18.57 ±2.67 pg/m L(range 15.20-23.06)vs 13.63±2.71 pg/m L(range 10.20-20.20), P =0.0001], but not in those with nonproliferative retinopathy(NPDR)[13.79±2.56 pg/m L(range 9.80-20.10) vs 13.63±2.71 pg/m L(range 10.20-20.20), P =0.961] compared to controls. There was decrement in the plasma melatonin level of patients with PDR, but no significant differences between the plasma melatonin levels of the study groups [ 5. 37 ±1.74 pg/m L(range 2.85-8.65) vs 6.11±1.90 pg/m L(range3.13-9.41), P =0.293], or between control and DR groups[NPDR 6.11 ±1.90 pg/m L(range 3.13-9.41) vs control6.15±1.91 pg/m L(range 2.18-9.86); PDR(5.37±1.74 pg/m L(range 2.85-8.65) vs control 6.15 ±1.91 pg/m L(range2.18-9.86), P =0.808, P =0.264].·CONCLUSION: Elevated melatonin levels in aqueous humor in PDR may indicate the level to be associated with DR severity. | Erdinc Aydin Semsettin Sahin | 2016 | International Journal of Ophthalmology(English edition)2016，9，5： | 4 |
| 2 | Relationship between maternal thyroid hormones and the biochemical markers of the first trimester aneuploidy screening显示文摘 | Hakan Aytan Ahmet C. Caliskan Fazl? Demirturk Semsettin Sahin Filiz Erdogan Zehra Kuzu | 2013 | Archives of Gynecology and Obstetrics2013，，6： | 1 |
| 3 | The effect of gastric Helicobacter pylori eradication on recurrent aphthous stomatitis显示文摘 | Semsettin Karaca Muammer Seyhan Mustafa Senol | 2008 | International Journal of Dermatology2008，47，： | 1 |
| 4 | Heart rate variability in patients with essential hyperhidrosis:dynamic influence of sympathetic and parasympathetic maneuvers显示文摘 | Dayimi Kaya Semsettin Karaea Irfan Bamtcu | 2005 | Ann of Noninvasive Electrocardiology2005，10，1： | 1 |
| 5 | Stress analysis of shrink-fitted joints for various fit forms via finite element method 显示文摘 | AdnanOzel Semsettin Temiz Murat Demir Aydin | 2005 | Materials and Design2005，26，： | 1 |
| 6 | Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature显示文摘In order to investigate of cobalt-doped interfacial polyvinyl alcohol(PVA) layer and interface trap(Dit) effects, Al/pSi Schottky barrier diodes(SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of30 kHz–300 kHz and-5 V–6 V, respectively. C–V or ε–V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance(Rs), and interfacial layer. Both the real and imaginary parts of dielectric constant(ε and ε) and electric modulus(M and M),loss tangent(tan δ), and AC electrical conductivity(σac) are investigated, each as a function of frequency and applied bias voltage. Each of the M versus V and M versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Ditand interfacial PVA layer, both capacitance(C) and conductance(G/w)values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si(MPS) type SBD. In addition, the voltage-dependent profile of Ditis obtained from the low–high frequency capacitance(CLF–CHF) method. | Ibrahim Ycedag Ahmet Kaya Semsettin Altindal Ibrahim Uslu | 2014 | Chinese Physics B2014，23，4： | 0 |
| 7 | Analyses of temperature-dependent interface states,series resistances,and AC electrical conductivities of Al/p Si and Al/Bi_4Ti_3O_(12)/p Si structures by using the admittance spectroscopy method显示文摘In this study,Al/p–Si and Al/Bi4Ti3O12/p–Si structures are fabricated and their interface states(N ss),the values of series resistance(R s),and AC electrical conductivity(σac) are obtained each as a function of temperature using admittance spectroscopy method which includes capacitance–voltage(C–V) and conductance–voltage(G–V) measurements.In addition,the effect of interfacial Bi4Ti3O12(BTO) layer on the performance of the structure is investigated.The voltagedependent profiles of N ss and R s are obtained from the high–low frequency capacitance method and the Nicollian method,respectively.Experimental results show that N ss and R s,as strong functions of temperature and applied bias voltage,each exhibit a peak,whose position shifts towards the reverse bias region,in the depletion region.Such a peak behavior is attributed to the particular distribution of N ss and the reordering and restructuring of N ss under the effect of temperature.The values of activation energy(E a),obtained from the slope of the Arrhenius plot,of both structures are obtained to be bias voltage-independent,and the E a of the metal–ferroelectric–semiconductor(MFS) structure is found to be half that of the metal–semiconductor(MS) structure.Furthermore,other main electrical parameters,such as carrier concentration of acceptor atoms(N A),built-in potential(V bi),Fermi energy(E F),image force barrier lowering(?Φb),and barrier height(Φb),are extracted using reverse bias C-2–V characteristics as a function of temperature. | Mert Ylldlrlm Perihan Durmus Semsettin Altlndal | 2013 | Chinese Physics B2013，22，10： | 0 |
| 8 | Dielectric properties,electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures显示文摘Au/Zn O/n-Si(MIS)structures were fabricated by using the RF sputtering method and their complex dielectric constant(ε~*=ε’-jε’’),electric modulus(M~*=M′+j M’’)and electrical conductivity(σ=σ_(dc)+σ_(ac))values were investigated as a function of frequency(0.7 k Hz-1 MHz)and voltage(-6–(+6 V))by capacitance-voltage(C-V)and conductance-voltage(G/ω-V)measurements to get more information on the conduction mechanisms and formation of barrier height between Au and n-Si.The lnσ-Lnf plots have two different regions corresponding to low-intermediate and high frequencies.Such behavior of lnσ-lnf plots shows that the existence of two different conduction mechanisms(CMs)at low-intermediate and high frequencies.Moreover,the reverse bias saturation current(I_o),ideality factor(n),barrier height(Φ_(Bo))were determined from the forward bias I-V data and they were found as a strong function of temperature.The value of n especially at low temperature is considerably higher than unity.The values ofΦ_(B0)and standard deviation(σ_s)were found from the intercept and slope ofΦ_(Bo)-q/2k T plots as 0.551 e V and 0.075 V for the region I(80–220 K)and 1.126 e V and 0.053 V for the region II(220–400 K),respectively.The values ofΦ_(Bo)and effective Richardson constant(A~*)were found from slope and intercept of activation energy plots as 0.564 e V and 101.084 Acm^(-2)K^(-2)for the region I and 1.136 e V and41.87 Acm^(-2)K^(-2)for the region II,respectively.These results confirm that the current-voltage-temperature(I-V-T)characteristics of the fabricated Au/Zn O/n-Si SBDs can satisfactorily be explained on the basis of TE theory with double GD of the BHs. | Yosef Badali Semsettin Altindal Ibrahim Uslu | 2018 | Progress in Natural Science:Materials International2018，28，3： | 0 |
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