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您的检索式：作者名="Semsettin Altindal"
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| 1 | Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature显示文摘In order to investigate of cobalt-doped interfacial polyvinyl alcohol(PVA) layer and interface trap(Dit) effects, Al/pSi Schottky barrier diodes(SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of30 kHz–300 kHz and-5 V–6 V, respectively. C–V or ε–V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance(Rs), and interfacial layer. Both the real and imaginary parts of dielectric constant(ε and ε) and electric modulus(M and M),loss tangent(tan δ), and AC electrical conductivity(σac) are investigated, each as a function of frequency and applied bias voltage. Each of the M versus V and M versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Ditand interfacial PVA layer, both capacitance(C) and conductance(G/w)values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si(MPS) type SBD. In addition, the voltage-dependent profile of Ditis obtained from the low–high frequency capacitance(CLF–CHF) method. | Ibrahim Ycedag Ahmet Kaya Semsettin Altindal Ibrahim Uslu | 2014 | Chinese Physics B2014，23，4： | 0 |
| 2 | Dielectric properties,electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures显示文摘Au/Zn O/n-Si(MIS)structures were fabricated by using the RF sputtering method and their complex dielectric constant(ε~*=ε’-jε’’),electric modulus(M~*=M′+j M’’)and electrical conductivity(σ=σ_(dc)+σ_(ac))values were investigated as a function of frequency(0.7 k Hz-1 MHz)and voltage(-6–(+6 V))by capacitance-voltage(C-V)and conductance-voltage(G/ω-V)measurements to get more information on the conduction mechanisms and formation of barrier height between Au and n-Si.The lnσ-Lnf plots have two different regions corresponding to low-intermediate and high frequencies.Such behavior of lnσ-lnf plots shows that the existence of two different conduction mechanisms(CMs)at low-intermediate and high frequencies.Moreover,the reverse bias saturation current(I_o),ideality factor(n),barrier height(Φ_(Bo))were determined from the forward bias I-V data and they were found as a strong function of temperature.The value of n especially at low temperature is considerably higher than unity.The values ofΦ_(B0)and standard deviation(σ_s)were found from the intercept and slope ofΦ_(Bo)-q/2k T plots as 0.551 e V and 0.075 V for the region I(80–220 K)and 1.126 e V and 0.053 V for the region II(220–400 K),respectively.The values ofΦ_(Bo)and effective Richardson constant(A~*)were found from slope and intercept of activation energy plots as 0.564 e V and 101.084 Acm^(-2)K^(-2)for the region I and 1.136 e V and41.87 Acm^(-2)K^(-2)for the region II,respectively.These results confirm that the current-voltage-temperature(I-V-T)characteristics of the fabricated Au/Zn O/n-Si SBDs can satisfactorily be explained on the basis of TE theory with double GD of the BHs. | Yosef Badali Semsettin Altindal Ibrahim Uslu | 2018 | Progress in Natural Science:Materials International2018，28，3： | 0 |
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