| 2 | Damage Enhancement Effect in Silicon Implanted With Molecular Ions显示文摘This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P2+ molecular ions and P+ atomic ions. The dependence of damage enhancement effect of P2+ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect. | 林成鲁 杨根庆 方子韦 李晓勤 邹世昌 J.Gyulai R.G.Elliman | 1993 | Science China Mathematics1993，36，2： | 0 |
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