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20篇 您的检索式：作者名="MCLARTY P K"

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	题名	作者	年代	出处	被引量
1	Electrical properties of thermal oxide grown using dry oxidation on p-type 6H-silicon carbide显示文摘	Alok D McLarty P K Baliga B J	1994	Appl Phys Lett1994，65，：	1
2	Single-wafer cluster tool performance: an analysis of the effects of redundant chamhers and revisitation sequences on throughput显示文摘	PERKINSON T L GYURCSIK R S MCLARTY P K	1996	IEEE Transactions on Semiconductor Manufacturing1996，9，3：	1
3	Single-wafer cluster tool performance: an analysis of the effects of redundant chambers and revisitation sequences on throughput 显示文摘	Perkinson T L Gyurcsik R S Mclarty P K	1996	IEEE Transactions on Semiconductor Manufacturing (S0894-6507)1996，9，3：	1
4	Single-wafer cluster tool performance: an analysis of the effects of redundant chambers and revisitation sequences on throughput显示文摘	PERKINSON T L GYURCSIK R S MCLARTY P K	1996	IEEE Transactions on Semiconductor Manufacturing1996，9，3：	1
5	Single-wafer cluster tool performance: An analysis of the effects of redundant chambers and revisitation sequences on throughput显示文摘	Perkinson TL Gyurcsik R S McLarty P K	1996	IEEE Transactions on Semiconductor Manufacturing1996，9，3：	1
6	Silicon carbide high-voltage (400 V ) Schottky barrier diodes 显示文摘	BHATNAGAR M MCLARTY P K BALIGA B J	1992	IEEE Electron Device Letters1992，13，10：	1
7	Single-wafer cluster tool performance: an analysis of the effects of redundant chambers and revisitation sequences on throughput 显示文摘	Perkinson T L Gyurcsik R S McLarty P K	1996	'iEEE Transactions on Semiconductor Manufacturing1996，9，3：	1
8	Silicon-carbide high-voltage (400 V) schottky barrier diodes显示文摘	Bhatnagar M Mclarty P K Baliga B J	1992	IEEE Electron Device Letters1992，13，10：	1
9	Single-wafer cluster tool performance: an analysis of the effects of redundant chambers and revisitation sequences on throughput 显示文摘	PERKINSON T L GYURCSIK R S MCLARTY P K	1996	IEEE Trans- actions on Semiconductor Manufacturing1996，9，3：	1
10	Single-wa- fer cluster tool performance: an analysis of the effects of redundant chambers and revisitation sequences on through- put显示文摘	Perkinson T L Gyurcsik R S McLarty P K	1996	IEEE Transactions on Semiconductor Manufactur- ing1996，9，3：	1
11	Single- wafer cluster tool performance: An analysis of the effects of redundant chambers and revisitation se- quences on throughput 显示文摘	Perkinson T L Gyurcsik R S McLarty P K	1996	IEEE Transactions on Semiconductor Manufacturing1996，9，38：	1
12	Single-wafer cluster tool performance: An analy sis of the effects of redundant chambers and revlsitat显示文摘	PERKINSON T L GYURCSIK R S MCLARTY P K	1996	IEEE Transactions on Semiconductor Manufacturing1996，9，38：	1
13	Integrated continuous production of recombinant therapeutic proteins显示文摘	Warikoo V Godawat R Brower K Jain S Cummings D Simons E Johnson T Walther J Yu M Wright M McLarty J Karey K P Hwang C Zhou W C Riske F Konstantinov K		0，，12：	1
14	Sil- icon-carbide high-voltage (400 V) Schottky barrier di- odes显示文摘	BHATNAGAR M MCLARTY P K BALIGA B J	1992	IEEE Electron Device Lett1992，13，10：	1
15	Single-wafer cluster tool performance: an analysis of throughput 显示文摘	Perkinson T L McLarty P K Gyuresik R S	1994	IEEE Trans Semieond Manufact1994，7，3：	1
16	Silicon Carbide High-voltage (400 V) Schottky Barrier Diode显示文摘	Bhatnagar M McLarty P K	1992	IEEE Electron Device Letters1992，13，10：	1
17	Single-wafer cluster tool performance: an analysis of throughput 显示文摘	PERKINSON T L MCLARTY P K GYURCSIK R S	1994	IEEE Transactions on Semiconductor Manufacturing1994，7，3：	1
18	Single-wafer cluster tool performance: an analysis of the effects of redundant chambers and revisitation sequences on throughput 显示文摘	PERKINSON T L GYURCSIK R S MCLARTY P K	1996	IEEE Transactions on Semiconductor Manufacturing1996，9，3：	1
19	Sin- gle-wafer cluster tool performance: An analysis of throughput 显示文摘	PERKINSON T L MCLARTY P K GYURCSIK R S	1994	IEEE Transactions on Semiconductor Manufacturing1994，7，3：	1
20	Single- wafer cluster tool performance: An analysis of the effects of re- dundant chambers and revisitation sequences on throughput 显示文摘	PERKINSON T L GYURCSIK R S MCLARTY P K	1996	1EEE Transactions on Semiconductor Manufacturing1996，9，3：	1

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