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11篇 您的检索式:作者名="Luysberg"
    题名 作者 年代 出处 被引量
1Structural Properties of Microcryst-alline Silicon in the Transition from Crystalline to Amorphous Growth显示文摘Houben L Luysberg M Hapke P 1998Philosophical Magazine A1998,77,6:1
2High mobility compressive strained Si 0.5 Ge 0.5 quantum well p-MOSFETs with higher- k /metal-gate显示文摘W. Yu B. Zhang Q.T. Zhao J.-M. Hartmann D. Buca A. Nichau R. Lupták J.M. Lopes S. Lenk M. Luysberg K.K. Bourdelle X. Wang S. Mantl 2011Solid State Electronics2011,,1:1
3Structure and growth of hydrogenated microcrystalline silicon: investiga- tion by transmission electron microscopy and Raman spec- troscopy of films grown at different plasma excitation fre- quencies 显示文摘Luysberg M Hapke P Carius R 1997Philosophical Magazine A1997,75,1:1
4Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth 显示文摘Houben L Luysberg M Hapke P 1997Phil MagA1997,77,6:1
5Morphological and crystallographic defect properties of microcrystalline silicon: a comparison between different growth modes显示文摘Houben L Luysberg M Hapke P 1998J Non-Cryst Solids1998,,:1
6Structural investigation and growth of -type microcrystalline silicon prepared at different plasma excitation frequencies显示文摘Hapke P Luysberg M Carius R 1996J Non-Cryst Solids1996,,:1
7Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge显示文摘Finger F Hapke P Luysberg M 1994Appl Phys Lett1994,65,20:1
8High frequency n-type MODFETs on ultra-thin virtual SiGe substrates显示文摘Mantl S Luysberg M Fichtner P F 2003Solid-State Electronics2003,47,7:1
9Structure and growth of hydrogenated microcrystalline silicon:investiga tion by transmission electron microscopy and Raman spec troscopy of films grown at different plasma excitation fre quencies显示文摘 Hapke P Carius R 1997Phil Mag A1997,75,1:1
10High frequency n-type MOSFETs on ultra-thin virtual SiGe substrates显示文摘MANTL S LUYSBERG M Fichtner P E 2003Solid-State Electronics2003,23,8:1
11Structure and growth of hydrogenated microcrystalline silicon: investigation by transmission dectron microscopy and Raman spectroscopy of films grown at different plasma excitation frequencies 显示文摘Luysberg M Hapke P Carius R 1997Phil Mag A1997,7,:1
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