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| 1 | High mobility compressive strained Si 0.5 Ge 0.5 quantum well p-MOSFETs with higher- k /metal-gate显示文摘 | W. Yu B. Zhang Q.T. Zhao J.-M. Hartmann D. Buca A. Nichau R. Lupták J.M. Lopes S. Lenk M. Luysberg K.K. Bourdelle X. Wang S. Mantl | 2011 | Solid State Electronics2011，，1： | 1 |
| 2 | Selective laser sintering processing of metallic components by using a Nd:YAG laser beam显示文摘 | Costache F Marian A Buca D M | 2000 | Proceedings of SPIE-The International Society for Optical Engineering2000，，4068： | 1 |
| 3 | Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy显示文摘We present an experimental setup capable of time resolved photoluminescence spectroscopy for photon energies in the range of0.51 to 0.56 eV with an instrument time response of75 ps.The detection system is based on optical parametric three wave mixing,operates at room temperature,has spectral resolving power,and is shown to be well suited for investigating dynamical processes in germanium-tin alloys.In particular,the carrier lifetime ofa direct-bandgap Ge1-xSnx film with concentration x=12.5%and biaxial strain-0.55%is determined to be 217±15 ps at a temperature of 20 K.A room-temperature investigation indicates that the variation in this life-time with temperature is very modest.The characteristics of the photoluminescence as a function of pump fuence are discussed. | BRIAN JULSGAARD NILS VON DEN DRIESCH PETER TIDEMAND-LICHTENBERG CHRISTIAN PEDERSEN ZORAN IKONIC DAN BUCA | 2020 | Photonics Research2020，8，6： | 1 |
| 4 | Sea transport of animal and vegetable oils and its environmental consequences显示文摘 | Bucas G Saliot A | 2002 | Marine Pollution Bulltin2002，44，12： | 1 |
| 5 | Macrophage migration inhibitory factor (MIF) : aglucocorticoid counter-regulator within the immune system 显示文摘 | Calandra T Buca|a R | 1997 | Crit Rev Immunol1997，17，1： | 1 |
| 6 | Selective laser sintering processing of metallic components by using a Nd:YAG laser beam显示文摘 | COSTACHE F MARIAN A BUCA D M | 2000 | Proceedings of SPIE-The International Society for Optical Engineering2000，，4068： | 1 |
| 7 | Formation of ternary Ni-silicide on relaxed and strained SiGe layers显示文摘 | Q.T. Zhao D. Buca St. Lenk R. Loo M. Caymax S. Mantl | 2004 | Microelectronic Engineering2004，，1： | 1 |
| 8 | Autologous chondrocyte transplantation in osteochondral lesions of the ankle joint显示文摘 | Giannini S Buca R Grigolo B | | 0，，06： | 1 |
| 9 | Vapor transport growth of MoS2 nucleated on SiO2 patterns and graphene flakes显示文摘因为它是向异质接面的自我排列的生长和形成的一个步骤,有图案的底层上的原子地薄的瞬间 2 层的蒸汽运输生长被调查,它能在未来应用是有用的。在模式边的瞬间 2 薄片的提高的形成在两个上被观察也就是,底层在 SiO 2 上在 Si (100 ) 和 graphene 薄片上检验了有图案的热 SiO 2 。散开驾驶生长在 SiO 2 模式的边附近与十测微计的尺寸导致瞬间 2 单层(ML ) 的形成。生长模式和瞬间 2 薄片的光质量能被改变底层温度控制。除侧面的生长以外, 3R 类型金字塔在延长生长上被获得。侧面的瞬间 2-graphene heterostructures 被在 SiO 2 上把 graphene 薄片用作底层获得。 | Toma Stoica Mihai Stoica Martial Duchamp Andreas Tiedemann Siegfried Mantl Detlev Orutzmacher Dan Buca Beata E. Kardynal | 2016 | Nano Research2016，9，11： | 0 |
| 10 | Modeling of a SiGeSn quantum well laser显示文摘We present comprehensive modeling of a Si GeSn multi-quantum well laser that has been previously experimentally shown to feature an order of magnitude reduction in the optical pump threshold compared to bulk lasers.We combine experimental material data obtained over the last few years with k·p theory to adapt transport,optical gain,and optical loss models to this material system (drift-diffusion,thermionic emission,gain calculations,free carrier absorption,and intervalence band absorption). Good consistency is obtained with experimental data,and the main mechanisms limiting the laser performance are discussed. In particular,modeling results indicate a low non-radiative lifetime,in the 100 ps range for the investigated material stack,and lower than expectedΓ-L energy separation and/or carrier confinement to play a dominant role in the device properties. Moreover,they further indicate that this laser emits in transverse magnetic polarization at higher temperatures due to lower intervalence band absorption losses. To the best of our knowledge,this is the first comprehensive modeling of experimentally realized Si GeSn lasers,taking the wealth of experimental material data accumulated over the past years into account. The methods described in this paper pave the way to predictive modeling of new (Si)GeSn laser device concepts. | BAHAREH MARZBAN DANIELA STANGE DENIS RAINKO ZORAN IKONIC DAN BUCA JEREMY WITZENS | 2021 | Photonics Research2021，9，7： | 0 |
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