维普期刊资源整合服务平台（V6.5）

36篇 您的检索式：作者名="CIRBA"

选中清除导出查看参考文献查看引证文献引用追踪共2页首页上一页第1页下一页末页 /2 跳转

	题名	作者	年代	出处	被引量
1	Modeling low dose rate effects in irradiated bipolar-base oxide显示文摘	GRAVES R J CIRBA C R SCHRIMPF R D		0，，06：	1
2	Modeling low-dose-rate effect in irradiated bipolar-base oxides 显示文摘	Graves R J Cirba C R Schrimpf R D	1998	IEEE Trans Nucl Sci1998，45，：	1
3	Physical model for enhanced interface-trap formation at low dose rates 显示文摘	Rashkeev S N Cirba C R Fleetwood D M	2002	IEEE Trans Nucl Sci2002，49，：	1
4	Physical model for enhanced interface-trap formation at low dose rate显示文摘	Rashkeev S N Cirba C R Fleetwood D M	2002	IEEE Trans Nucl Sci2002，38，6：	1
5	Physical model for enhanced interface-trap formation at low dose rates显示文摘	Rashkeev S N Cirba C R Fleetwood D M	2002	IEEE Trans Nucl Sei2002，49，6：	1
6	Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control显示文摘	Barnaby H J Cirba C Schrimpf R D	1999	IEEE Trans Nucl Sci1999，46，6：	1
7	Physical model for enhanced interface-trap formation at low dose rates显示文摘	Rashkeev S N Cirba C R Fleetwood D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
8	Modeling low-dose-rate effects in irradiated bipolar-base oxides显示文摘	GRAVES R J CIRBA C R SCHRIMPF R D	1998	IEEE Trans Nucl Sci1998，45，6：	1
9	Physical model for enhanced interface-trap formation at low dose rates显示文摘	RASHKEEV S N CIRBA C R FLEETWOOD D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
10	Physical model for enhanced interface-trap formation at low dose rates 显示文摘	RASHKEEV S N CIRBA C R FLEETWOOD D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
11	Modeling low-dose-rate effect in irradiated bipolar-base oxides显示文摘	GRAVES R J CIRBA C R SCHRIMPF R D	1998	IEEE Trans Nucl Sci1998，45，6：	1
12	Physical model for enhanced interface-trap formation at low dose rates显示文摘	Rashkeev S N Cirba C R Fleetwood D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
13	Modeling low-dose-rate effects in irradiated bipolar-base oxides显示文摘	Graves R J Cirba C R Schrimpf R D	1998	IEEE Trans on NuclearScience1998，45，6：	1
14	Physical model for enhanced interface-trap formation at low dose rates显示文摘	RASHKEEV S N CIRBA C R FLEETWOOD D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
15	Physical model for enhanced inter face-trap formation at low dose rates显示文摘	RASHKEEV S N CIRBA C R FLEETWOOD D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
16	Modeling low-dose-rate effect in irradiatedbipolar-base oxides显示文摘	GRAVES R J CIRBA C R SCHRIMPF R D	1998	IEEE Trans Nucl Sci1998，45，6：	1
17	Physical modelfor enhanced interface-trap formation at low doserates显示文摘	RASHKEEV S N CIRBA C R	2002	IEEE Trans Nucl Sci2002，49，6：	1
18	查看详情显示文摘	Felix J A Schwank J R Cirba C R Schrimpf R D Shaneyfelt M R Fleetwood D M Dodd P E		0，，：	1
19	Single event transient in a voltage reference显示文摘	Adell P C Cirba C R Barnaby H J	2005	Microelectronics Reliability2005，45，2：	1
20	Model- ing Low-dose-rate effects in irradiated bipolar-base ox- ides 显示文摘	Graves R J Cirba C R Schrimpf R D	1998	IEEE Trans Nucl Sci1998，45，6：	1

返回顶部每页显示：

共2页首页上一页第1页下一页末页 /2 跳转

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

用户提示