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| 1 | Recent Advances and Challenges Toward Application of Fibers and Textiles in Integrated Photovoltaic Energy Storage Devices显示文摘Flexible microelectronic devices have seen an increasing trend toward development of miniaturized,portable,and integrated devices as wearable electronics which have the requirement for being light weight,small in dimension,and suppleness.Traditional three-dimensional(3D)and two-dimensional(2D)electronics gadgets fail to effectively comply with these necessities owing to their stiffness and large weights.Investigations have come up with a new family of one-dimensional(1D)flexible and fiber-based electronic devices(FBEDs)comprising power storage,energy-scavenging,implantable sensing,and flexible displays gadgets.However,development and manufacturing are still a challenge owing to their small radius,flexibility,low weight,weave ability and integration in textile electronics.This paper will provide a detailed review on the importance of substrates in electronic devices,intrinsic property requirements,fabrication classification and applications in energy harvesting,energy storage and other flexible electronic devices.Fiber-and textile-based electronic devices for bulk/scalable fabrications,encapsulation,and testing are reviewed and presented future research ideas to enhance the commercialization of these fiber-based electronics devices. | Amjid Rafique Isabel Ferreira Ghulam Abbas Ana Catarina Baptista | 2023 | Nano-Micro Letters2023，15，3： | 3 |
| 2 | Structural and optical properties of Cr doped ZnO crystalline thin films deposited by reactive electron beam evaporation technique显示文摘ZnO and Cr-doped ZnO thin films are grown on to glass substrates using reactive electron beam(e-beam) evaporation technique.Variation of structural,morphological,and optical properties with Cr doping is investigated.X-ray diffraction(XRD) studies show that the films are polycrystalline in nature with single phase.Energy dispersive spectroscopy(EDS) results demonstrate that Cr ions are substitutionally incorporated into ZnO.Atomic force microscopy(AFM) reveals that the films present a compact surface and root mean squared(RMS) roughness increased with Cr contents.The optical band gap energy Eg of the films has been determined using Transmission data by spectrophotometer and ellipsometry.The band gap energy found to be decreased with increasing Cr doping concentration.The optical constants(refractive index,extinction coefficient) are calculated using ellipsometry and found to increase with Cr doping concentration. | Amjid Iqbal Arshad Mahmood Taj Muhammad Khan Ejaz Ahmed | 2013 | Progress in Natural Science:Materials International2013，23，1： | 2 |
| 3 | An unsolved conundrum: the ideal follow-up strategy after curative surgery for colorectal cancer显示文摘 | Piriyah Sinclair Anjana Singh Amjid A. Riaz Alla Amin | 2012 | Gastrointestinal Endoscopy2012，，5： | 2 |
| 4 | An unsolved conundrum: the ideal follow-up strategy after curative surgery for colorectal cancer显示文摘 | Piriyah Sinclair Anjana Singh Amjid A. Riaz Alla Amin | 2012 | Gastrointestinal Endoscopy2012，，5： | 1 |
| 5 | Rotator cuff tears显示文摘 | Anthony Cooper Amjid Ali | 2013 | Surgery (Oxford)2013，，： | 1 |
| 6 | Photoluminescence and structural analysis of wurtzite(ZnO)1-x(V2O5)x composite显示文摘This paper demonstrates the structural, vibrational and photoluminescence characteristics of(ZnO)_(1-x)(V_2O_5)_x(x = 0, 3, 6 and 9 mol%) composites semiconductor synthesized by using the solid state reaction method. X-ray diffraction(XRD) studies show that(ZnO)_(1-x)(V_2O_5)_x composites have the poly crystalline wurtzite structure of hexagonal Zn O. It is found from the XRD results that the lattice constants and the crystallite size increase while the dislocation density decreases with increase in doping concentration. The existence of E1(TO) and E2(high) Raman modes show that the Zn O still preserve wurtzite structure after doping vanadium oxide, which is in agreement with XRD results. Room temperature photoluminescence(PL) exhibit near band edge and broad deep level emission while indicating the suppression of deep level emission with the incorporation of V_2O_5 up to a certain concentration(x < 9). Moreover, the optical band gap increase with doping, which is accompanied by the blue shift of the NBE emission. | Amjid Iqbal Arshad Mahmood Q. Raza A. Shah Rashad Rashid Zahid Ali A. Malik U. Aziz | 2018 | Journal of Semiconductors2018，39，8： | 0 |
| 7 | Structural and spectroscopic analysis of wurtzite(ZnO)_(1-x)(Sb_2O_3)_x composite semiconductor显示文摘The structural, vibrational and impedance analysis for(Zn O)1 x(Sb2O3)xcomposite synthesized by solid state reaction technique were carried out in the present investigation. X-ray diffraction(XRD) study showed that(Zn O)1 x(Sb2O3)xcomposite has hexagonal(wurtzite) crystal structure. Variation in lattice constants with Sb-doping indicated the proper incorporation of Sb dopant in Zn O host matrix. The results of Raman spectroscopy test suggested the signature of E2(high) and E1(TO) Raman modes, and verified the wurtzite structure of(Zn O)1 x(Sb2O3)x composite. Two additional phonon bands(671, 712) cm 1appeared in Raman spectra of composite samples due to the existence of the lattice defects caused by Sb doping or may be other intrinsic lattice defects formed during the synthesis of(Zn O)1 x(Sb2O3)xcomposite. The frequency dependent on the electrical characteristics, such as, impedance(Z), dielectric constant(ε) and AC conductivity(σ) have been studied in a range of frequencies for different Sb concentration at room temperature. The electrical measurement results showed that the impedance increased with Sb dopant concentration, while dielectric constant and AC conductivity decreased with Sb dopant concentration. | Hafeez ullah Amjid Iqbal M. Zakria Arshad Mahmood | 2015 | Progress in Natural Science:Materials International2015，25，2： | 0 |
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