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9篇 您的检索式：作者名="Akhbar"

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		题名	作者	年代	出处	被引量
	1	Rubber toughened polyamide 6/high density polyethylene/HDPE-g-MAH nano- composites with ethylene vinyl acetate 显示文摘	HAMID F AKHBAR S HAMID H	2014	Key Eng Mater2014，，：	1
	2	i Oxidation of aromatic amines to quinones by iodic acid unde microwave irradiation in the presence of montmorillonite K10 and silica gel显示文摘	MohammedM Hashem i Maryam Akhbar	2003	Monatshefte fur Chemie2003，134，：	1
	3	Increased serum sclerostin and decreased serum IGF 1 are associated with vertebral fractures among postmenopausal women with type-2 diabetes显示文摘	Ardawi MS Akhbar DH Alshaikh A		0，，02：	1
	4	Complete electrochemical deehlorination of ehlorobenzenes in the presence of naphthalene mediator显示文摘	JALIL A A PANJIANG N F A AKHBAR S	2007	J Hazard Mater2007，148，12：	1
	5	Increased Serum Sclerostin and Decreased Serum IGF-1 are Associated with Vertebral Fractures among Postmenopausal Women with Type-2 Diabetes显示文摘	Mohammed-Salleh M. Ardawi Daad H. Akhbar Abdulrahman AlShaikh Maimoona M. Ahmed Mohammed H. Qari Abdulrahim A. Rouzi Ahmed Y. Ali Adel A. Abdulrafee Mamdouh Y. Saeda	2013	Bone2013，，：	1
	6	Complete electrochemical dechlorination of chlorobenzenes in the presence of naphthalene mediator显示文摘	JALIL A A PANJANG N F A AKHBAR S		0，，1：	1
	7	Increased serum sclerostin and decreased serum IGF-1 are associated with vertebral fractures among postmenopausal women with type-2 diabetes显示文摘	Ardawi MS Akhbar DH Alshaikh A	2013	Bone2013，56，2：	1
	8	Increased serum sclemstin and decreased serum IGF-I are associated with vertebral frac- tures among postmenopansal women with type-2 diabetes 显示文摘	Ardawi M S Akhbar D H Alshaikh A	2013	Bone2013，56，2：	1
	9	Notch-δ-doped InP Gunn diodes for low-THz band applications显示文摘The viability of the indium phosphide(InP)Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling.The presence of theδ-doped layer could enhance the current harmonic amplitude(A0)and the fundamental operating frequency(f0)of the InP Gunn diode beyond 300 GHz as compared with the conventional notch-doped structure for a 600-nm length device.With its superior electron transport properties,the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide(GaAs)diodes with up to 1.35 times higher in f0 and 2.4 times larger in A0 under DC biases.An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency(RF)power at 361 GHz.The Monte Carlo simulations predict a reduction of 44%in RF power,when the device temperature is increased from 300 K to 500 K;however,its operating frequency lies at 280 GHz which is within the low-THz band.This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors,which are in a high demand in the autonomous vehicle industry.	Duu Sheng Ong Siti Amiera Mohd Akhbar Kan Yeep Choo	2023	Journal of Electronic Science and Technology2023，21，2：	0

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