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29篇 您的检索式：作者名="AUTRAN J L"

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	题名	作者	年代	出处	被引量
1	Tantalum Pentoxide ( Ta2 05 ) Thin Films for Advanced Dielectric Applications 显示文摘	Chaneliero C Autran J L Devine R A B	1998	Materials Science and Engineering1998，22，：	1
2	Tantalum pentoxide(Ta2Os) thin films for advanced dielectric applications显示文摘	CHANELIERE C AUTRAN J L DEVINE R A B BALLAND B	1998	Materials Science and Engineering R1998，22，：	1
3	X-radiation response of SIMOX buried oxides:influence of the fabrication process显示文摘	Paillet P Autran J L Flament O	1996	IEEE Transactions on Nuclear Science1996，43，2：	1
4	On the tunneling component of charge pumping current in ultrathin gate oxide MOSFET's 显示文摘	MASSON P AUTRAN J L BRIRII J	1999	IEEE Elec Dev Lett1999，20，2：	1
5	Tantalum Pentoxide (Ta200 Thin Films for Advanced Dielectric Applications 显示文摘	Chaneliere C Autran J L Devine R A B	1998	Materials Science and Engineering1998，22，：	1
6	显示文摘	Chaneliere C Autran J L Devine R A B	1998	Mater Sci Eng R1998，22，：	1
7	On the tunneling component of charge pumping current in ultrathin gate oxide MOSFET's显示文摘	Masson P Autran J L Brini J	1999	IEEE Electron Devices Letters1999，20，2：	1
8	Post-treatment HIV-1 controllers with a long- term virological remission after the interruption of early ini- tiated antiretroviral therapy ANRS VISCONTI Study 显示文摘	Sfiez-Ciri6n A Bacchus C Hocqueloux L Avettand-Fenoel V Girault I Lecuroux C Potard V Versmisse P Melard A Prazuck T Descours B Guergnon J Viard JP Boufassa F Lambotte O Goujard C Meyer L Costagliola D Venet A Pancino G Autran B Rouzioux C ANRS VISCONTI Study Group	2013	PLoS Pathog2013，9，10：	1
9	Capacitance non-linearity study in A1203 MIM capacitors using an ionic polariza- tion model 显示文摘	BECU S GREMER S AUTRAN J L	2006	Microelectronic Engineering2006，83，1112：	1
10	Trapping-de- trapping prop-erties of irradiated ultra-thin SIMOX buried oxides显示文摘	Paillet P Autran J L Leray J L	1995	IEEE Trans Nucl Sci1995，42，6：	1
11	Pasta brownness: an assessment显示文摘	Feillct P Autran J C Verniere C L	2000	Journal of Cereal Science2000，32，：	1
12	Theoretical Investigation of Incomplete Ionization of Dopants in 6H-SiC Metal-Oxide-Semiconductor Capacitors显示文摘	Raynaud C and Autran J L	1999	Journal of Applied Physics1999，86，4：	1
13	Theoretical investigation of incomplete ionization of dopants on 6H-SiC metal-oxide-semiconductor capacitors 显示文摘	Raynaud C Autran J L	1999	Journal of Applied Physics1999，86，4：	1
14	Pasta brownness: an assessment显示文摘	Feillet P Autran J C Verniere C L	2000	Journal of Cereal Science2000，32，：	1
15	Charge pumping analysis of radiation effects in LOCOS parasitic transistors显示文摘	FLAMENT O AUTRAN J L PALILLET P	1997	IEEE Trans on Nuclear Science1997，44，6：	1
16	On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs 显示文摘	MASSON P AUTRAN J L BRINI J	1999	IEEE EDL1999，20，2：	1
17	Pasta brownness : an assessment 显示文摘	Feillet P Autran J C Vemiere C L	2000	Journal of Cereal Science2000，32，：	1
18	Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks 显示文摘	HOUSSA M AUTRAN J L STESMANS A	2002	Appl Phys Lett2002，81，4：	1
19	Theoretical investigation of incomplete ionization of dopants in 6H-SiC mental-oxide-semiconductor capacitors显示文摘	Raynaud C Autran J L	1999	J Appl Phys1999，86，4：	1
20	Tantalum pentoxide (Ta2Os) thin fi ms for advanced die eetr c app icat ons 显示文摘	CHANELIERE C AUTRAN J L DEVINE R A B	1998	Mater Sci Eng1998，22，6：	1

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