维普中文期刊产品整合服务
13篇 您的检索式:作者名="FLAMENT O"
    题名 作者 年代 出处 被引量
1Bias dependence of FD Transistor respond to total dose irradiation 显示文摘Flament O Torres A Ferlet- Cavrois V 2003IEEE Transactions of nuclear science2003,50,6:1
2X-radiation response of SIMOX buried oxides:influence of the fabrication process显示文摘Paillet P Autran J L Flament O 1996IEEE Transactions on Nuclear Science1996,43,2:1
3Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic tran- sistor显示文摘BRISSET C CAVROIS V F FLAMENT O 1996IEEE Trans Nucl Sci1996,43,6:1
4查看详情显示文摘Flament O Torres A Ferlet-Cavrois V 0,,:1
5Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor显示文摘BRISSET C CAVROIS V F FLAMENT O 1996IEEE Trans Nuci Sci1996,43,6:1
6查看详情显示文摘Tortes A Flament O 0,,:1
7Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor 显示文摘BRISSET C CAVROIS V F FLAMENT O 1996IEEE Trans on Nuclear Science1996,43,6:1
8Charge pumping analysis of radiation effects in LOCOS parasitic transistors显示文摘FLAMENT O AUTRAN J L PALILLET P 1997IEEE Trans on Nuclear Science1997,44,6:1
9Total dose induced latch in short channel NMOS/SOI transistors 显示文摘Ferlet -Cavrois V Musseau O Flament O 1998IEEE Trans Nucl Sci1998,45,:1
10查看详情显示文摘Flament O Tortes A Ferlet-Cavrois V 0,,:1
11Post-irradiation Effects in a Rad-hard Technology显示文摘 Musseau O Flament O 1996IEEE Trans Nucl Sci1996,43,3:1
12X - radiation response of SIMOX buried oxides: influence of the fabrication process 显示文摘Paillet P Autran J L Flament O 1996IEEE Transactions on Nuclear Science1996,43,2:1
13High total dose effects on CMOS/SOI technology 显示文摘FLAMENT O DUPONT-NIVET E LERAY J L 1992IEEE Trans Nucl Sci1992,39,3:1
返回顶部 每页显示:
共1页 首页 上一页 第1页 下一页 末页 /1 跳转

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1 渝公网安备 50019002500403号 违法和不良信息举报中心

互联网出版许可证 新出网证(渝)字10号 全国400电话 - 免长途话费