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28篇 您的检索式：作者名="ASBECK P M"

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	题名	作者	年代	出处	被引量
1	Measurement of piezoelectrically induced charge in GaN/A1GaN heterostructure field - effect transistors 显示文摘	Yu E T Sullivan G J Asbeck P M	1997	Appl Phys Lett1997，71，19：	1
2	Predictors of health status and life satisfaction in spinal cord injury显示文摘	Post M W de Witte L P van Asbeck F W		0，，04：	1
3	Measurement of drift mobility in AlGaN/GaN heterostructure field- effect transistor显示文摘	Dang X Z Asbeck P M Yu E T	1999	Applied Physics Letters1999，74，25：	1
4	显示文摘	Asbeck P M Miller D L Peterson W C	1982	IEEE Electron Device Lett1982，3，：	1
5	Current mode class D power amplifiers for high efficiency RF application显示文摘	Kobayashi H Hinrichs J M Asbeck P M	2001	IEEE Transactions on Microwave Theory and techniques2001，49，12：	1
6	Enhanced elec- tromagnetic interference shielding through the use of function- alized carbon-nanotube-reactive polymer composites 显示文摘	Park S H Theilmann P T Asbeck P M	2010	Ieee Transactions on Nanotechnology2010，9，4：	1
7	High power GaAIAs/GaAs HBTS for microwave applications显示文摘	Sheng N H Chang M F Asbeck P M		0，，：	1
8	Enhanced electromagnetic interference shielding through the use of functionalized carbon-nanotube-reactive polymer composites显示文摘	PARK S THEILMANN P T ASBECK P M	2010	IEEE Transactions on Nanotechnology2010，9，4：	1
9	Measurement of piezoeletcrically induced charge in GaN/AIGaN heterostructure field - effecttransistor显示文摘	Yu E T Sullivan G J Asbeck P M etal	1997	Appl Phys Lett1997，71，：	1
10	Accurate Thermal Analysis of GaN HFETs显示文摘	Conway A M Asbeck P M Moon J S	2008	Solid-State Electronics2008，52，5：	1
11	Open-Loop Digital Predistorter for RF Power Amplifiers Using Dynamic Deviation Reduction-Based Volterra Series显示文摘	Anding Zhu Draxler P J Yan J J Brazil T J Kimball D F Asbeck P M		Microwave Theory and Techniques0，，：	1
12	High efficiency power amplifier using dynamic power-supply voltage for CDMA applications 显示文摘	Hanington G Chen P Asbeck P M	1999	IEEE Trans on Microwave Theory and Techniques1999，47，8：	1
13	GaAlAs/GaAs Heterojunction Bipolar Transistors:Issues and Prospects for Application显示文摘	Asbeck P M Chang Mau-Chung F Higgins J A	1989	IEEE Transactions on Electron Devices1989，36，10：	1
14	Synergistic design of DSP and power amplifier for wireless communications 显示文摘	Asbeck P M Larson L E Galton 1 G	2001	IEEE Trans on Microwave Theory and Tech2001，49，11：	1
15	Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital application显示文摘	Chang C E Asbeck P M Wang K C		0，，04：	1
16	A reusable microfluidic plate with alternate choice architecture for assessing growth preference in tissue culture显示文摘	Wittig Jr J H Ryan A F Asbeck P M	2005	Journal of Neuroscience Methods2005，144，1：	1
17	High- efficiency power amplifier using dynamic power- supply voltage for CDMA applications显示文摘	Hanington G Chen P Asbeck P M	1999	IEEE Transactions on Microwave Theory and Techniques1999，47，8：	1
18	Spontaneous and piezoelectric polarization effects in Ⅲ-Ⅴ nitride heterostructures 显示文摘	YU E T DANG X Z ASBECK P M	1999	J Vac Sci Technol B1999，17，4：	1
19	Measurement of piezoelectrically inducedcharge in GaN/AlGaN heterostructure field-effect transistors显示文摘	Yu E T Sullivan G J Asbeck P M	1997	Appl Phys Lett1997，71，19：	1
20	Enhancement of Base Conductivity Via the Piezoelectric Effect in AlGaN/GaN HBTs显示文摘	P M Asbeck E T Yu S S Lau		0，，02：	1

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