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| 1 | Application of soft landing to the process control of chemical mechanical polishing显示文摘 | Chiu J B Yu C C Shen S H | 2003 | Microelectronic Engineering2003，65，3： | 2 |
| 2 | Noise as a diagnostic and prediction tool in reliability physics 显示文摘 | Jevtic M M | 1995 | Microelectronics Reliability1995，35，： | 2 |
| 3 | The correlation between the low-frequency electrical noises of high-power quantum well lasers and devices surface non-radiative current 显示文摘 | HU Gui-jun SHI Jia-wei ZHANG Su-mei | 2002 | Microelectronics Reliability2002，42，： | 2 |
| 4 | The Variables and Invariants in the Evolution of Logic Optical Lithography Process显示文摘Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been invented and successfully implemented,such as image projection lithography,chemically amplified photoresist,phase shifting mask,optical proximity modeling and correction,etc.From 0.25μm technology to the current 7 nm technology,the linewidth has been shrunk from 250 nm to about 20 nm,or 12.5 times.Although imaging resolution is proportional to the illumination wavelength,with the new technologies,the wavelength has only been shrunk from 248 nm to 134.7 nm(193 nm immersion in water),less than 2 times.Would it mean that the imaging performance has been continuously declining?Or we have yet fully utilized the potential of the photolithography technology?In this paper,we will present a study on the key parameters and process window performance of the image projection photolithography from 0.25μm node to the current 7 nm node. | Qiang Wu | 2019 | Journal of Microelectronic Manufacturing2019，2，1： | 2 |
| 5 | An improved approach and experimented results of a low-frequency noise measurement technique used for reliability estimation of diode lasers 显示文摘 | SHI Jia-wei JIN En-shun MA Jing | 1994 | Microelectronics Reliability1994，34，1： | 2 |
| 6 | Light emitting diodes reliability review显示文摘 | Moon-Hwan Chang Diganta Das P.V. Varde Michael Pecht | 2011 | Microelectronics Reliability2011，，5： | 2 |
| 7 | Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices 显示文摘 | Soelkner G Kreutle J Quincke J | 2000 | Microelectronics Reliability2000，40，810： | 2 |
| 8 | Technological innovation in low- dose SIMOX wafers fabricated by an internal thermal oxidation (ITOX) process 显示文摘 | Matsummura A Hamaguchi I Kawamura K | 2003 | Microelectronic Engineering2003，66，： | 2 |
| 9 | Fabrication of Ge2Sb2Te5 based PRAM device at 60 nm scale by using UV nanoimprint lithography显示文摘 | Lee H Hong S H Yang K Y | 2007 | Microelectronic Engineering2007，84，： | 1 |
| 10 | Design and fabrication of a micro wankel engine using MEMS technology 显示文摘 | Lee C H Jiang K C Jin P | 2004 | Microelectronic Engineering2004，，： | 1 |
| 11 | 显示文摘 | Kang K Daneshvar K Tsu R | 2004 | Microelectron J2004，35，8： | 1 |
| 12 | Modem IC Packaging Trends and Their Reliability Implications显示文摘 | Plieninger R Dittes M Pressel K | 2006 | Microelectronics Reliability2006，46，911： | 1 |
| 13 | Temperature profile effects in accelerated thermal cycling of SnPb and Pb-free solder joints 显示文摘 | Qi Y Lam R Ghorbani H R | 2006 | Microelectronics Reliability2006，46，24： | 1 |
| 14 | Nanofabrication using hot embossing lithography and electroforming显示文摘 | Schift H | 2001 | Microelectronic Engineering2001，，5758： | 1 |
| 15 | Micro cantilever probe array integrated with piezoresistive sensor显示文摘 | Li Xinxin Wang Yuelin | 2004 | J Microelectron2004，35，5： | 1 |
| 16 | Fabrication and Characterization of Single Electron Transistor on SOI显示文摘 | Wang Q Chen Y F Long S B | 2007 | Microelectronic Engineering2007，84，58： | 1 |
| 17 | Response of carbon nanotube transistors to electron beam exposure显示文摘 | RIUS G MARTIN I GODIGNON P | 2007 | Microelectron Eng2007，84，58： | 1 |
| 18 | Reliability Model for AI Wire Bonds subjected to Heel Crack Failures显示文摘 | RAMMINGER S SELIGER N Wachutka G | 2000 | Microelectronics Reliability2000，40，： | 1 |
| 19 | Characteriz- ing the mismatch of submicron MOS transistors显示文摘 | Lovett S J Clancy R Welten M | 1996 | IEEE Int Conf Microelectronic Test Structures1996，9，： | 1 |
| 20 | An eficientreconfigurable multier architecture for GF(2) 显示文摘 | KITSOS P THEODORIDIS G KOUFOPAVLOU | 2003 | Microelectronics J2003，34，10： | 1 |
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