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| 1 | Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy显示文摘The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials. | FANG HeNan ZHANG Rong LIU Bin LI YeCao FU DeYi LI Yi XIE ZiLi ZHUANG Zhe ZHENG YouDou WU JingBo JIN BiaoBing CHEN Jian WU PeiHeng | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，11： | 6 |
| 2 | Application of halide vapor phase epitaxy for the growth of ultrawide band gap Ga_2O_3显示文摘Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga_2O_3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga_2O_3 substrates and for the fabrication of high power β-Ga_2O_3 devices. | Xiangqian Xiu Liying Zhang Yuewen Li Zening Xiong Rong Zhang Youdou Zheng | 2019 | Journal of Semiconductors2019，40，1： | 5 |
| 3 | Recent progress of SiC UV single photon counting avalanche photodiodes显示文摘4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs. | Linlin Su Dong Zhou Hai Lu Rong Zhang Youdou Zheng | 2019 | Journal of Semiconductors2019，40，12： | 5 |
| 4 | Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays显示文摘Solar-blind ultraviolet(UV)photodetectors(PDs)have attracted tremendous attention in the environmental,industrial,military,and biological fields.As a representative Ill-nitride material,AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties,such as tunable wide bandgaps for intrinsic UV detection.In recent decades,a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection.As integrated optoelectronic technology advances,AlGaN-based focal plane arrays(FPAs)are manufactured and exhibit outsta nding solar-blind imaging capability.Con sidering the rapid development of AlGaN detection techniques,this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs.First,the basic physical properties of AlGaN are presented.The epitaxy and p-type doping problems of AlGaN alloys are then discussed.Diverse PDs,including photoconductors and Schottky,metal-semiconductor-metal(MSM),p-i-n,and avalanche photodiodes(APDs),are dem on strated,and the physical mechanisms are analyzed to improve device performance.Additionally,this paper summarizes imaging technologies used with AlGaN FPAs in recent years.Benefit!ng from the development of AlGaN materials and optoelectronic devices,solar-blind UV detection technology is greeted with significant revolutions. | Qing Cai Haifan You Hui Guo Jin Wang Bin Liu Zili Xie Dunjun Chen Hai Lu Youdou Zheng Rong Zhang | 2021 | Light(Science & Applications)2021，10，6： | 4 |
| 5 | White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy显示文摘Monolithic white-light-emitting diodes(white LEDs) without phosphors are demonstrated using In GaN/GaN multiple quantum wells(MQWs) grown on GaN microrings formed by selective area epitaxy on SiO_2 mask patterns. The microring structure is composed of {1-101} semi-polar facets and a(0001) c-plane, attributed to favorable surface polarity and surface energy. The white light is realized by combining short and long wavelengths of electroluminescence emissions from In GaN /GaN MQWs on the {1-101} semi-polar facets and the(0001) c-plane,respectively. The change in the emission wavelengths from each microfacet is due to the In composition variations of the MQWs. These results suggest that white emission can possibly be obtained without using phosphors by combining emission light from microstructures. | Guofeng Yang Peng Chen Shumei Gao Guoqing Chen Rong Zhang Youdou Zheng | 2016 | Photonics Research2016，4，1： | 3 |
| 6 | Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction显示文摘High-resolution X-ray diffraction has been used to analyze GaN(0001) epitaxial layers on sapphire substrates. Several structural properties of GaN, including the lattice constants, strains, and dislocation densities are revealed by the technique of X-ray dffraction (XRD). Lattice constants calculated from the omega/2theta scan are c=0.5185 nm and a=0.3157 nm. Also, the in-plane strain is -1.003%, while out of the plane, the epitaxial film is almost relaxed. Several methods are used to deduce the mosaicity and dislocation density of GaN, showing that the edge type dislocations are the overwhelming majority. | XIE ZiLi 1,2,3, ZHOU YuanJun 1 , SONG LiHong 1,2 , LIU Bin 1 , HUA XueMei 1,2 , Xiu XiangQian 1 , ZHANG Rong 1,2,3 & ZHENG YouDou 1,2,3 1 JiangSu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 210093, China 2 Nanjing National Laboratory of Microstructures, Nanjing 210093, China 3 NJU-Yangzhou Institute of Opto-electronics, Yangzhou, 225001, China | 2010 | Science China(Physics,Mechanics & Astronomy)2010，53，1： | 3 |
| 7 | Simulation of growing GaN in vertical HVPE reactor显示文摘The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. It is found that when the direction of gravity is opposite to the direction of GaCl flow inlet,there exits a distance at which the uniformity of the deposition is optimal. Here the good uniformity of the deposition is obtained when the distance between the substrate and GaCl inlet is 5 cm. The parameters of gas flow used in growing GaN are also optimized. In addition, the influence of gravity and buoyancy on the deposition of GaN is discussed, too. It is found that the angle between the direction of gravity and the direction of GaCl flow inlet has a major effect on the deposition rate and the uniformity of the growth. Compared with the situation when the direction of gravity is the same with the direction of GaCl flow inlet, although the deposition rate of GaN has decreased obviously, the uniformity of the deposition has improved largely when the direction of gravity is opposite to the direction of GaCl flow inlet. | ZHAO ChuanZhen, XIU XiangQian , ZHANG Rong , XIE ZiLi, LIU Bin, LIU ZhanHui, YAN HuaiYue & ZHENG YouDou Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China | 2010 | Science China(Physics,Mechanics & Astronomy)2010，53，1： | 3 |
| 8 | Effect of the V/Ⅲ ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer显示文摘Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is found that the densities of screw and edge threading dislocations increase with the V/III ratio of the buffer layer,and the intensities of the yellow luminescence(YL) and blue luminescence(BL) emissions also increase dramatically.However,the density ratio of the edge threading dislocation to the screw threading dislocation remains invariant,as well as the intensity ratio of YL emission to BL emission.It can be concluded from these phenomena that the edge threading dislocation and screw threading dislocation can enhance the YL and BL emissions,respectively. | CHAI XuZhao ZHANG Yun LIU Bin XIE ZiLi HAN Ping YE JianDong HU LiQun XIU XiangQian ZHANG Rong ZHENG YouDou | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，9： | 2 |
| 9 | High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD显示文摘We fabricated p-i-n tunnel junction(TJ)contacts for hole injection on c-plane green micro-light-emitting diodes(micro-LEDs)by a hybrid growth approach using plasma-assisted molecular beam epitaxy(PA-MBE)and metal–organic chemical vapor deposition(MOCVD).The TJ was formed by an MBE-grown ultra-thin unintentionally doped In Ga N polarization layer and an n^(++)∕n^(+)-GaN layer on the activated p^(++)-Ga N layer prepared by MOCVD.This hybrid growth approach allowed for the realization of a steep doping interface and ultrathin depletion width for efficient inter-band tunneling.Compared to standard micro-LEDs,the TJ micro-LEDs showed a reduced device resistance,enhanced electroluminescence intensity,and a reduced efficiency droop.The size-independent J-V characteristics indicate that TJ could serve as an excellent current spreading layer.All these results demonstrated that hybrid TJ contacts contributed to the realization of high-performance micro-LEDs with long emission wavelengths. | YAOZHENG WU BIN LIU FEIFAN XU YIMENG SANG TAO TAO ZILI XIE KE WANG XIANGQIAN XIU PENG CHEN DUNJUN CHEN HAI LU RONG ZHANG YOUDOU ZHENG | 2021 | Photonics Research2021，9，9： | 2 |
| 10 | Heteroepitaxial growth of thick α-Ga_2O_3 film on sapphire(0001)by MIST-CVD technique显示文摘The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire(0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-halfmaximum(FWHM) of rocking curves for the(0006) and(10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 106 and 1.63 × 109 cm-2, respectively, indicative of high single crystallinity. The out-ofplane and in-plane epitaxial relationships are [0001] α-Ga2O3//[0001] α-Al2O3 and [11-20] α-Ga2O3//[11-20] α-Al2O3, respectively.The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced compressive residual strain cannot be ruled out despite the large thickness of the α-Ga2O3 epilayer. The achieved high quality α-Ga2O3 may provide an alternative material platform for developing high performance power devices and solar-blind photodetectors. | Tongchuan Ma Xuanhu Chen Fangfang Ren Shunming Zhu Shulin Gu Rong Zhang Youdou Zheng Jiandong Ye | 2019 | Journal of Semiconductors2019，40，1： | 2 |
| 11 | Study of buffer and epitaxy technology in two-step growth of aluminium nitride显示文摘AlN (aluminium nitride) films were prepared by metalorganic chemical vapor depo- sition (MOCVD) on c-plane sapphire (α-Al2O3) substrates. By means of studying the traces of in-situ optical reflectivity, it was found that the AlN nucleation layer showed a specific (0001) lattice orientation, which differed from the GaN nucleation layer on (0001) sapphire substrates. The AlN buffer suffered the compressive stress at the initial stage of nucleation. And the compressive strain was relaxed gradually along with the thickness of buffer increasing and consequently annealing. Optical transmission spectra revealed that in the process of growing AlN epilayers, higher V/III ratio could improve the crystal quality but reduce the growth rates. In addition, proper doping of silane (SiH4) could improve the surface morphology of AlN film. | LIU QiJia ZHANG Rong XIE ZiLi LIU Bin XU Feng YAO Jing NIE Chao XIU XiangQian HAN Ping ZHENG YouDou GONG HaiMei | 2008 | Science China(Technological Sciences)2008，51，11： | 1 |
| 12 | The temperature dependence of optical properties of InGaN alloys显示文摘In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region.It was found that both phenomena are relative to localization effects.In addition,the degree of localization effects in three samples was investigated using the band-tail model.Our findings are presented in this paper. | ZHAO ChuanZhen ZHANG Rong LIU Bin FU DeYi CHEN Hui LI Ming XIE ZiLi XIU XiangQian GU ShuLin ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，3： | 1 |
| 13 | A modified simplified coherent potential approximation model of band gap energy of III-V ternary alloys显示文摘Based on the modification of the simplified coherent potential approximation(SCPA),a model is developed to calculate the composition dependence of the band gap energy of III-V ternary alloys with the same anion.The derived equation is used to fit the experimental band gap energy of In x Al 1 x N,In x Ga 1 x N and Al x Ga 1 x N with x from 0 to 1.It is found that the fitting results are better than those done by using SCPA.The fitting results are also better than those obtained by using the formula with a small bowing coefficient,especially for In x Al 1 x N.In addition,our model can also be used to describe the composition dependence of band gap energy of other III-V ternary alloys. | Zhao ChuanZhen Zhang Rong Liu Bin Fu DeYi Li Ming Xiu XiangQian Xie ZiLi Zheng YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，3： | 1 |
| 14 | Band alignment and polarization engineering inκ-Ga_(2)O_(3)/GaN ferroelectric heterojunction显示文摘Ferroelectric-semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered functionality and improved performance.In this work,we report on the heteroepitaxial construction,band structure alignment and polarization engineering of the single-phasedκ-Ga_(2)O_(3)/GaN ferroelectric/polar heterojunction.A type-II band alignment is determined at theκ-Ga_(2)O_(3)/GaN polar hetero-interface,with a valence band offset of(1.74±0.1)eV and a conduction band offset of(0.29■0.1)eV.Besides the band edge discontinuity,charge dipoles induced by spontaneous polarization lead to the observed band bending with built-in potentials of 0.9 and 0.33 eV,respectively,at theκ-Ga_(2)O_(3)surface andκ-Ga_(2)O_(3)/GaN interface.The polarization switching properties of ferroelectricκ-Ga_(2)O_(3)are identified with a remanent polarization of approximately 2.7μC/cm^(2)via the direct hysteresis remanent polarization/voltage(P-V)loop measurement.These findings allow the rational design ofκ-Ga_(2)O_(3)ferroelectric/polar heterojunction for the application of power electronic devices,advanced memories and even ultra-low loss negative capacitance transistors. | Yanting Chen Hongkai Ning Yue Kuang Xing-Xing Yu He-He Gong Xuanhu Chen Fang-Fang Ren Shulin Gu Rong Zhang Youdou Zheng Xinran Wang Jiandong Ye | 2022 | Science China(Physics,Mechanics & Astronomy)2022，65，7： | 1 |
| 15 | The parameters in the band-anticrossing model for In_xGa_(1-x)N_yP_(1-y) before and after annealing显示文摘We investigate the parameters in the band-anticrossing (BAC) model for GaNP and InGaPN in this work. The parameters in the BAC model for GaNP and InGaNP are obtained by fitting experimental data. It is found that the band gap bowing of InGaNP is stronger than that of InGaNAs. The effects of annealing on the parameters in the BAC model for InGaNP are also discussed in this work. In addition, the origins for improving luminescence efficiency by annealing are explained. It is relative to the forming of more In-N clusters. | ZHAO ChuanZhen ZHANG Rong LIU Bin YU LiYuan TANG ChunXiao XIE ZiLi XIU XiangQian ZHENG YouDou | 2011 | Science China(Physics,Mechanics & Astronomy)2011，54，12： | 1 |
| 16 | Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes显示文摘The reverse leakage characteristics of AlGaNbased ultraviolet light-emitting diodes fabricated on sapphire substrate are studied by temperature-variable current–voltage(I–V)measurement from 300 to 450 K.At low-reverse bias range(0–0.5 V),the reverse leakage current exhibits tunneling characteristics.Meanwhile,under a more negative reverse bias range([0.5 V),the log(I)–log(V)plots exhibit close-to-linear dependency,which is in good agreement with the transport mechanism of space-charge limited current.A phenomenological leakage current model focusing on electron transmission primarily through continuous defect band formed by linear defects like dislocations is suggested to explain the reverse current–voltage characteristics. | Rong Jiang Dawei Yan Hai Lu Rong Zhang Dunjun Chen Youdou Zheng | 2014 | Chinese Science Bulletin2014，59，12： | 1 |
| 17 | Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection显示文摘In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated.With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 × 10~4, and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electricfield-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes. | WEIZONG XU YATING SHI FANGFANG REN DONG ZHOU LINLIN SU QING LIU LIANG CHENG JIANDONG YE DUNJUN CHEN RONG ZHANG YOUDOU ZHENG HAI LU | 2019 | Photonics Research2019，7，8： | 1 |
| 18 | Simulation of a new style vertical HVPE system显示文摘In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride(GaN),we change the distance between the inlet and the substrate,GaCl and NH3 inlets,and also we add substrate rotation separately.With the increase of the distance between the substrate and the gas inlet,GaN deposition rate decreases and the uniformity becomes better.The results show that the optimal distance in this new-style vertical hydride vapour phase epitaxy(HVPE) system is 4 cm.Besides,as the distance between the GaCl inlet and the NH3 inlet changes,the uniformity of GaN deposition varies.Our findings indicate that the optimal distance is 3 cm.Furthermore,it is found that substrate rotation also affects the growth rate of GaN. | ZHOU An XIU XiangQian ZHANG Rong XIE ZiLi LIU Bin HAN Ping GU ShuLin SHI Yi ZHENG YouDou | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，12： | 1 |
| 19 | Ferromagnetism of Ni-Doped ZnO Powders Prepared by Sol-Gel Method above Room Temperature显示文摘The magnetic and structural properties of 2% Ni-doped ZnO powers prepared by sol-gel method were studied. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) of the sample do not show existence of any signal of second phase. The X-photoelectron spectroscopy (XPS) of the sample shows the chemical valence of Ni is +2 and the real Ni concentration is 2.19% determined by X-ray fluorescence spectra (XRFS). The magnetic property performed with superconducting quantum interference device (SQUID) shows that the sample exhibits ferromagnetism above room temperature and the Curie temperature (TC) is about 600 K. | Li Binbin Zhang Rong Xiu Xiangqian Tao Zhikuo Chen Lin Xie Zili Zheng Youdou Yu Huiqiang | 2006 | Journal of Rare Earths2006，24，z1： | 0 |
| 20 | Current-Induced Light Emission from a Laterally Anodizing Porous Silicon Device显示文摘We report the current-induced light emission(CILE)at RT from a porous silicon(PS)Schottky device exhibiting good rectifying characteristics with the ideal factor of 14.The photoluminescence spectrum from the PS layer fabricate by laterally anodization peaks at 668 nm.The intensity of CILE increases with increasing current.It has run for more than two hours and still keeps stable.Possible mechanism of CILE is discussed. | SHI Hongtao ZHENG Youdou WAND Yongbin YUAN Renkuan | 1992 | Chinese Physics Letters1992，9，10： | 0 |
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