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22篇 您的检索式：作者名="Vescan A"

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	题名	作者	年代	出处	被引量
1	High-confinement SiGe Low-loss Waveguides for Si-based Optoelectronics 显示文摘	POGOSSIANA S P VESCAN L VONSOVICI A	1999	Appl Phys Lett1999，75，10：	1
2	12 W/ram A1GaN-GaN HFETs on silicon substrates显示文摘	Johnson J W Piner E L Vescan A	2004	IEEE Electron Device Letters2004，25，8：	1
3	Very high temperature operation of diamond sehottky diode显示文摘	Vescan A Daumiller I Gluche P	1997	IEEE Electron Device Lett1997，18，11：	1
4	RF characterization and transient behavior of AlGaN/GaN power HFETs 显示文摘	Leier H Vescan A Dietrich R	2001	IEICE Trans Electron2001，84，：	1
5	Particle size distribution and wastewater filter performance 显示文摘	Kaminski I Vescan N Adin A	1997	Water Science and Technology1997，36，4：	1
6	Photoluminescence and electroluminescence of SiGe dots fabricated by island growth 显示文摘	VESCAN L HARTMANN A	1995	Appl Phys Lett1995，66，4：	1
7	Expanded endonasal approach: vidian canal as a landmark to the petrous internal carotid artery显示文摘	Kassam A B Vescan A D Carrau R L	2008	Neurosurg2008，108，2：	1
8	High-temperature, high-voltage operation of pulse-doped diamond MESFET 显示文摘	Vescan A Gluche P Ebert W	1997	IEEE Electron Device Lett1997，18，5：	1
9	High temperature, high voltage operation of diamond schottky diode 显示文摘	Vescan A Daumillem I Gluche P	1998	Diamond and Related Materials1998，7，：	1
10	Vidianemlal : analysis and relationship to the internal carotid ar-tery显示文摘	Vescan A D Snyderman C H Carran R L	2007	Laryngoscope2007，117，8：	1
11	The single- mode condition for semiconductor rib waveguides with large cross section 显示文摘	POGOSSIAN S P VESCAN L VONSOVICI A	1998	Journal of Lightwave Technology1998，16，10：	1
12	12 W/ram AlGaN-GaN HFETs on silicon substrates显示文摘	Johnson J W Piner E L Vescan A	2004	IEEE Electron Device Lett2004，25，7：	1
13	Expand-ed endonasal approach : vidian canal as a landmark to thep retous internal carotid artery 显示文摘	Kassam A B Vescan A D Carrau R L	2008	J Neurosurg2008，108，1：	1
14	Parathyroid hormone as a predictor of hypocalcemia after thyroidectomy 显示文摘	Vescan A Witterick I Freeman J	2005	Laryngoscope2005，115，12：	1
15	The single-mode condition for semicondouctor rib waveguides with large cross section 显示文摘	Pogossian S P Vescan L Vonsovici A	1998	IEEE Journal of Lightwave Techolngy1998，16，：	1
16	The single-mode condition for semiconductor rib waveguides with large cross section 显示文摘	Vescan L Vonsovici A	1998	Lightwave Technology1998，16，10：	1
17	The nucleation of highly oriented diamond on silicon via an alternating current substrate bias显示文摘	WOLTER S D BORST T H VESCAN A		0，，25：	1
18	Very high temperature operation of diamond schottkydiode显示文摘	Vescan A Daumiller I GIuche P	1997	IEEE Electr Device Lett1997，18，：	1
19	Expanded endonasal approach: vidian canal as a landmark to the petrous internal carotid artery显示文摘	KASSAM A B VESCAN A D CARRAU R L	2008	J Neurosurg2008，108，：	1
20	Vidian canal: analysis and relationship to the internal carotid artery 显示文摘	VESCAN A D SNYDERMAN C H CARRAU R L	2007	Laryngoscope2007，117，：	1

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