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39篇 您的检索式:作者名="VESCAN"
    题名 作者 年代 出处 被引量
1High-confinement SiGe Low-loss Waveguides for Si-based Optoelectronics 显示文摘POGOSSIANA S P VESCAN L VONSOVICI A 1999Appl Phys Lett1999,75,10:1
2Si/Si1-xGex/Si low-loss waveguides fabricated using selective epitaxial growth显示文摘ADRIAN Vonsovici SOUREN P VESCAN L 2001Proceeding of SPIE2001,,4293:1
312 W/ram A1GaN-GaN HFETs on silicon substrates显示文摘Johnson J W Piner E L Vescan A 2004IEEE Electron Device Letters2004,25,8:1
4Very high temperature operation of diamond sehottky diode显示文摘Vescan A Daumiller I Gluche P 1997IEEE Electron Device Lett1997,18,11:1
5Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices 显示文摘VESCAN L GRIMM K DIEKER C 1998Journal of Vacuum Science & Technology: B1998,16,3:1
6Vidian canal:anlysis and relationship to the internal carotid artery显示文摘Vescan AD Snyderman CH Carrau RL 2007Laryngoscope2007,117,8:1
7RF characterization and transient behavior of AlGaN/GaN power HFETs 显示文摘Leier H Vescan A Dietrich R 2001IEICE Trans Electron2001,84,:1
8Particle size distribution and wastewater filter performance 显示文摘Kaminski I Vescan N Adin A 1997Water Science and Technology1997,36,4:1
9Photoluminescence and electroluminescence of SiGe dots fabricated by island growth 显示文摘 VESCAN L HARTMANN A 1995Appl Phys Lett1995,66,4:1
10Vidian canal:analysis and rela-tionship to the internal carotid artery显示文摘Vescan AD Snyderman CH Carrau RL 2007Laryngoscope2007,117,8:1
11Expanded endonasal approach: vidian canal as a landmark to the petrous internal carotid artery 显示文摘Kassam AB Vescan AD Carrau RL 2008J Neurosurg2008,108,1:1
12Expanded endonasal approach: vidian canal as a landmark to the petrous internal carotid artery显示文摘Kassam A B Vescan A D Carrau R L 2008Neurosurg2008,108,2:1
13High-temperature, high-voltage operation of pulse-doped diamond MESFET 显示文摘Vescan A Gluche P Ebert W 1997IEEE Electron Device Lett1997,18,5:1
14Vidian canal: analysis and relationship to the internal carotid artery 显示文摘Vescan AD Snyderman CH Carrau RL 2007Laryngoscope2007,117,8:1
15High temperature, high voltage operation of diamond schottky diode 显示文摘Vescan A Daumillem I Gluche P 1998Diamond and Related Materials1998,7,:1
16Vidianemlal : analysis and relationship to the internal carotid ar-tery显示文摘Vescan A D Snyderman C H Carran R L 2007Laryngoscope2007,117,8:1
17MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates显示文摘M. Fieger M. Eickelkamp L. Rahimzadeh Koshroo Y. Dikme A. Noculak H. Kalisch M. Heuken R.H. Jansen A. Vescan 2006Journal of Crystal Growth2006,,:1
18The single- mode condition for semiconductor rib waveguides with large cross section 显示文摘POGOSSIAN S P VESCAN L VONSOVICI A 1998Journal of Lightwave Technology1998,16,10:1
1912 W/ram AlGaN-GaN HFETs on silicon substrates显示文摘Johnson J W Piner E L Vescan A 2004IEEE Electron Device Lett2004,25,7:1
20Expand-ed endonasal approach : vidian canal as a landmark to thep retous internal carotid artery 显示文摘Kassam A B Vescan A D Carrau R L 2008J Neurosurg2008,108,1:1
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