| 6 | Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor显示文摘Excitons dominate the photonic and optoelectronic properties of a material.Although significant advancements exist in understanding various types of excitons,progress on excitons that are indirect in both real-and momentum-spaces is still limited.Here,we demonstrate the real-and momentum-indirect neutral and charged excitons(including their phonon replicas)in a multi-valley semiconductor of bilayer MoS_(2),by performing electric-field/doping-density dependent photoluminescence.Together with first-principles calculations,we uncover that the observed real-and momentum-indirect exciton involves electron/hole from K/Γvalley,solving the longstanding controversy of its momentum origin.Remarkably,the binding energy of real-and momentum-indirect charged exciton is extremely large(i.e.,~59 meV),more than twice that of real-and momentum-direct charged exciton(i.e.,~24 meV).The giant binding energy,along with the electrical tunability and long lifetime,endows real-and momentum-indirect excitons an emerging platform to study many-body physics and to illuminate developments in photonics and optoelectronics. | Zhiheng Huang Yuhui Li Tao Bo Yanchong Zhao Fanfan Wu Lu Li Yalong Yuan Yiru Ji Le Liu Jinpeng Tian Yanbang Chu Xiaozhou Zan Yalin Peng Xiuzhen Li Yangkun Zhang Kenji Watanabe Takashi Taniguchi Zhipei Sun Wei Yang Dongxia Shi Shixuan Du Luojun Du Guangyu Zhang | 2023 | National Science Open2023，2，4： | 0 |
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