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24篇 您的检索式：作者名="Selberherr"

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	题名	作者	年代	出处	被引量
1	Simon:a simulator for single-electron tunnel devices and circuits显示文摘	WASSHUBER C KOSINA H SELBERHERR S	1997	IEEE Trans Computer Aided Design of Integrated Circuits and Systems1997，16，5：	1
2	Study of dopant-dependent band gap narrowing in compound semiconductor devices显示文摘	Palankovski V Grujin G K Selberherr S	1999	Materials Science and Engineering1999，66，：	1
3	Study of dopant-dependent band gap narrowing in compound semiconductor devices显示文摘	Palankovski V Grujin G K Selberherr S	1999	Materials Science and Engineer1999，66，：	1
4	Tunneling CNTFETs 显示文摘	Pouffath M Kooina H Selberherr S	2007	Journal of Computational Electronics2007，6，：	1
5	Efficient Inductance calculation in interconnect structures by applying the Monte Carlo method 显示文摘	CHRISTIAN HARLANDER RAINER SABELKA SIEGFRIED SELBERHERR	2003	Micmelectronics Journal2003，，34：	1
6	Two-dimensional modeling of ion implantation induced point defects显示文摘	Hobler G Selberherr S	1988	IEEE Trans Computer-Aided Design1988，7，2：	1
7	SIMON--A Simulatou for single-electron tunneldevices and circuits显示文摘	C Wasshuber H Koina S Selberherr	1997	IEEE Transactions on Computer-Aided Design of Integrated Circuits andSystems1997，16，9：	1
8	An interpolation based MOSFET model for low-voltage applications 显示文摘	Schrom G Stach A Selberherr S	1998	Microelectronics Journal1998，29，8：	1
9	Three dimensional level set based Bosch process simulations using ray tracing for flux calculation 显示文摘	Ertl 0 Selberherr S	2010	Microelectronic Engineerinf42010，87，1：	1
10	SIMON- a simulator for single-electron tunnel devices and cir- cuits 显示文摘	WASSHUBER C KOSINA H SELBERHERR S	1997	IEEE Trans on Computer Aided Design1997，16，9：	1
11	Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices显示文摘	Gehring A Selberherr S	2004	IEEE Transactions on Devices and Materials Reliability2004，4，3：	1
12	A finite element simulator for three-dimensional analysis of interconnect structures显示文摘	Sabelka Rainer Selberherr S	2001	Microelectronics Journal2001，31，2：	1
13	Integrated optimization capabilities in the VISTA technology CAD framework 显示文摘	Plasun R Stockinger M Selberherr S	1998	IEEE Trans Computer-Aided Design of Integrated Circuits and Systems1998，17，12：	1
14	ViennaX : a parallel plngin execution framework for scientific computing 显示文摘	WEINBUB J RUPP K SELBERHERR S	2013	Engineering with Computers2013，29，：	1
15	查看详情显示文摘	Ceric H Selberherr S		0，，：	1
16	Two-Dimensional Modeling of Ion Implantation Induced Point Defects显示文摘	Selberherr S	1988	IEEE Trans Computer-Aided Design1988，7，2：	1
17	MINIMOS-A Two-Dimensional MOS Transistor Analyzer显示文摘	Selberherr S Schutz A Potzl H W	1980	IEEE Trans Electron Devices1980，27，：	1
18	Physical modeling of electron mobility enhancement for arbitrarily strained silicon显示文摘	Enzo Ungersboeck Siddhartha Dhar Gerhard Karlowatz Hans Kosina Siegfried Selberherr	2007	Journal of Computational Electronics (-)2007，，1：	1
19	Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices显示文摘	GEHRING A SELBERHERR S	2004	IEEE Trans on Device and Materials2004，4，3：	1
20	Algorithms and models for cellular based topography simulation显示文摘	Strasser E Selberherr S	1995	IEEE Trans Comp Aid Des of Integr Circ and Syst1995，14，9：	1

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