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| 1 | The Variables and Invariants in the Evolution of Logic Optical Lithography Process显示文摘Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been invented and successfully implemented,such as image projection lithography,chemically amplified photoresist,phase shifting mask,optical proximity modeling and correction,etc.From 0.25μm technology to the current 7 nm technology,the linewidth has been shrunk from 250 nm to about 20 nm,or 12.5 times.Although imaging resolution is proportional to the illumination wavelength,with the new technologies,the wavelength has only been shrunk from 248 nm to 134.7 nm(193 nm immersion in water),less than 2 times.Would it mean that the imaging performance has been continuously declining?Or we have yet fully utilized the potential of the photolithography technology?In this paper,we will present a study on the key parameters and process window performance of the image projection photolithography from 0.25μm node to the current 7 nm node. | Qiang Wu | 2019 | Journal of Microelectronic Manufacturing2019，2，1： | 2 |
| 2 | Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach显示文摘 | Guo B Ravaioli U Song D | 2004 | Microelectronics Journal2004，35，2： | 1 |
| 3 | Modified Postannealing of the Ge Condensation Process for Better-strained Si Material and Devices 显示文摘 | Liu X Y Ma X B Du X F | 2010 | Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures2010，28，5： | 1 |
| 4 | Modelling Electronic Circuit Ra- diation Cooling Using Analytical Thermal Model 显示文摘 | Janicki M Napieralski A | 2000 | MICROELECTRONICS JOURNAL2000，31，910： | 1 |
| 5 | Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study显示文摘 | G.Venkateshwar Reddy M.Jagadesh Kumar | 2004 | Microelectronics Journal2004，，9： | 1 |
| 6 | Accelerometer -based fall detection usingoptimized ZigBee data streaming 显示文摘 | BENOCCI M TACCONI C FARELLA E | 2010 | Microelectronics Journal2010，41，11： | 1 |
| 7 | EUV Lithography: State-of-the-Art Review显示文摘Although several years delayed than its initial plan, extreme UV lithography (EUVL) with 13.5nm wavelength has been finally implemented into high volume manufacture (HVM) of mainstream semiconductor industry since 2018. With the delivery and installation of ASML EUV scanners in those giant Fab players like Samsung, TSMC and Intel, EUV lithography is becoming a sort of industry standard exposure metrology for those critical layers of advanced technology nodes beyond 7nm. Although ASML NXE EUVL scanner is the only commercialized EUV exposure system available on the market, its development is the concentration of all essence from worldwide industrial and academic collaboration. It is becoming more and more important not only for fab runners but also for main stream fabless design houses to understand and participate the progress of EUVL. In this review, working principles, module structures and technical challenges have been briefly discussed regarding each EUV subsystem, including light source, reflection mirrors and system, reticle module as well as photoresist development. EUV specific issues of light intensity, defectivity within reflection system, line edge roughness (LER) and mask 3D effects have been focused respectively and promising solutions have been summarized as well. | Nan Fu Yanxiang Liu Xiaolong Ma Zanfeng Chen | 2019 | Journal of Microelectronic Manufacturing2019，2，2： | 1 |
| 8 | CMOS-Compatible Temperature Sensor with Digital Output for Wide Temperature Range Applications显示文摘 | Bianehi R A Karate J M Courtois B | 2000 | Microelectronics Journal2000，31，： | 1 |
| 9 | Integral passive for next generation of electronic packaging: Application of epoxy/ceramic nanocomposites as integral capacitors 显示文摘 | Bhattacharya S K Tummala R R | 2001 | Microelectronics Journal2001，32，1： | 1 |
| 10 | Probing human skin as an information-rich smart biological interface using MEMS sensors显示文摘 | Bhansali S Thurman H Hoath S B | 2002 | Microelectronics Journal2002，33，12： | 1 |
| 11 | Low power flip-flop design on PAL-2N structure 显示文摘 | Ng K W Lau K T | 2000 | Microelectronics Journal2000，31，： | 1 |
| 12 | A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics 显示文摘 | OH J K KIM D Y LEE B H | 1999 | Microelectronics Journal1999，30，6： | 1 |
| 13 | A vertically sensitive accelerometer and its realisation by depth UV lithography supported electroplating显示文摘 | QU W WENZEL C DRESCHER K | 2000 | Microelectronics journal2000，31，7： | 1 |
| 14 | Carbon nanotube tips for surface characterization: Fabrication and properties 显示文摘 | Su Chien-Chan | 2009 | Microelectronics Journal2009，40，1： | 1 |
| 15 | Theoretical analysis and optimization of electromagnetic actuation in a valveless microimpedance pump显示文摘 | Chang H T Lee C Y | 2007 | Microelectronics Journal2007，38，6： | 1 |
| 16 | Designing leakage tolerant, low power wide-OR dominos for sub-130nm CMO6 technologies 显示文摘 | CHATTERJEE B SACHDEV M KRISHNAMURTHY R | 2005 | Microelectronics Journal2005，36，6： | 1 |
| 17 | The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime 显示文摘 | BYEONA D S CHUN J H LEE B H | 1999 | Microelectronics Journal1999，30，6： | 1 |
| 18 | Fabrication of thickness-controlled silicon nanowires and their characteristics 显示文摘 | NAMATSU H TAKAHASHI Y NAGASE M | 1995 | Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures1995，13，6： | 1 |
| 19 | A new evaluation method of thermal transient measurement results 显示文摘 | Szekely V | 1997 | Microelectron Journal1997，28，3： | 1 |
| 20 | OTA-based monostable multivibrators with current tuning properties显示文摘 | Chien H C Lo Y K | 2011 | Microelectronics Journal2011，42，： | 1 |
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