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| 1 | 纳米压印光刻技术——下一代批量生产的光刻技术(英文)显示文摘纳米压印光刻技术已被证实是纳米尺寸大面积结构复制的最有前途的下一代技术之一。这种速度快、成本低的方法成为生物化学、μ级流化学、μ-TAS和通信器件制造以及纳米尺寸范围内广泛应用的一种日渐重要的方法,如生物医学、纳米流体学、纳米光学应用、数据存储等领域。由于标准光刻系统的波长限制、巨大的开发工作量、以及高昂的工艺和设备成本,纳米压印光刻技术可能成为主流IC产业中一种真正富有竞争性方法。对细小到亚10nm范围内的极小复制结构,纳米压印技术没有物理极限。从几种纳米压印光刻技术中选择两种前景广阔的方法——热压印光刻(HEL)和紫外压印光刻(UV-NIL)技术给予介绍。两种技术对各种各样的材料以及全部作图的衬底大批量生产提供了快速印制。重点介绍了HEL和UV-NIL两种技术的结果。全片压印尺寸达200mm直径,图形分辨力高,拓展到纳米尺寸范围。 | R.Pelzer P.Lindner T.Glinsner B.Vratzov C.Gourgon S.Landis P.Kettner C.Schaefer | 2004 | 电子工业专用设备2004，33，7： | 2 |
| 2 | Characteristics and distributions of atmospheric mercury emitted from anthropogenic sources in Guiyang,southwestern China显示文摘Continuous measurements of speciated atmospheric mercury(Hg), including gaseous elemental mercury(GEM), particulate mercury(PHg), and reactive gaseous mercury(RGM) were conducted in Guizhou Province, southwestern China. Guiyang Power Plant(GPP),Guiyang Wujiang Cement Plant, Guizhou Aluminum Plant(GAP), and Guiyang Forest Park(GFP) in Guiyang were selected as study sites. Automatic Atmospheric Mercury Speciation Analyzers(Tekran 2537A) were used for GEM analysis. PHg and RGM were simultaneously collected by a manual sampling system, including elutriator, coupler/impactor, KCl-coated annular denuder, and a ?lter holder.Results show that different emission sources dominate different species of Hg. The highest average GEM value was 22.2 ± 28.3 ngám^(-3)and the lowest 6.1 ± 3.9 ngám^(-3),from samples collected at GPP and GAP, respectively. The maximum average PHg was 1984.9 pgám^(-3)and the minimum average 55.9 pgám^(-3), also from GPP and GAP,respectively. Similarly, the highest average RGM of 68.8pgám^(-3)was measured at GPP, and the lowest level of20.5 pgám^(-3)was found at GAP. We conclude that coal combustion sources are still playing a key role in GEM;traf?c contributes signi?cantly to PHg; and domestic pollution dominates RGM. | Xiaohang Xu Na Liu Matthew S.Landis Xinbin Feng Guangle Qiu | 2016 | Acta Geochimica2016，35，3： | 1 |
| 3 | Nanoimprint Lithography -A Next Generation High Volume Lithography Technique显示文摘Nanoimprint Lithography has been demon-strated to be one of the most promising next genera-tion techniques for large-area structure replicationin the nanometer scale. This fast and low costmethod becomes an increasingly important instru-ment for fabrication of biochemistry,m-fluidic, m-TAS and telecommunication devices, as well as for awide variety of fields in the nm range, like biomedical,nano-fluidics,nano-optical applications, datastorage, etc.Due to the restrictions on wavelength and theenormous development works, linked to high pro-cess and equipment costs on standard lithographysystems, nanoimprint lithography might become areal competitive method in mainstream IC industry.There are no physical limitations encountered withimprinting techniques for much smaller replicatedstructures, down to the sub-10nm range [1]. Amongseveral Nanoimprint lithography techniques resultsof two promising methods, hot embossing lithogra-phy (HEL) and UV-nanoimprinting (UV-NIL) will bepresented. Both techniques allow rapid prototypingas well as high volume production of fully patternedsubstrates for a wide range of materials.This paper will present results on HE and UV-NIL, among them full wafer imprints up to 200mmwith high-resolution patterns down to nm range. | R. Pelzer P. Lindner T. Glinsner B.Vratzov C.Gourgon S.Landis P. Kettner C. Schaefer | 2004 | 半导体技术2004，29，7： | 0 |
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