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| 1 | Development of a redundant anthropomorphic hydraulically actuated manipulator with a roll-pitch-yaw spherical wrist显示文摘The demand for redundant hydraulic manipulators that can implement complex heavy-duty tasks in unstructured areas is increasing;however,current manipulator layouts that remarkably differ from human arms make intuitive kinematic operation challenging to achieve.This study proposes a seven-degree-of-freedom(7-DOF)redundant anthropomorphic hydraulically actuated manipulator with a novel roll-pitch-yaw spherical wrist.A hybrid series-parallel mechanism is presented to achieve the spherical wrist design,which consists of two parallel linear hydraulic cylinders to drive the yaw/pitch 2-DOF wrist plate connected serially to the roll structure.Designed as a 1R£RRR-1S£U mechanism(“R”,“P”,“S”,and“U”denote revolute,prismatic,spherical,and universal joints,respectively;the underlined letter indicates the active joint),the 2-DOF parallel structure is partially decoupled to obtain simple forward/inverse kinematic solutions in which a closed-loop subchain“R£RR”is included.The 7-DOF manipulator is then designed,and its third joint axis goes through the spherical center to obtain closed-form inverse kinematic computation.The analytical inverse kinematic solution is drawn by constructing self-motion manifolds.Finally,a physical prototype is developed,and the kinematic analysis is validated via numerical simulation and test results. | Min CHENG Zenan HAN Ruqi DING Junhui ZHANG Bing XU | 2021 | Frontiers of Mechanical Engineering2021，16，4： | 5 |
| 2 | High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs显示文摘The high frequency performances of nano-scale ultra-thin-body (UTB) Schottky-barrier n-MOSFETs (SB-nMOSFETs) are investigated using 2D full-band self-consistent ensemble Monte Carlo method. The UTB SB-nMOSFET devices offer excellent RF performance with high values of f T and f max.The significant dependence of f T and f max on gate voltage and weak dependence on barrier height are demonstrated.Meanwhile,the significant dependence of g m and g ds on both gate voltage and SB height are shown. Moreover,the scalability of f T is outstanding and close to the ideal case (f T ∝ 1/L2g ). The high frequency performances of 45 nm channel length SB-nMOSFETs at ballistic transport limit are also investigated. Results show that scattering strongly affects the capacitances C gs,C gd and C ds.At ballistic transport limit the f T and f max are almost 10 times larger.The Scattering effects in nano-scale SB-nMOSFETs cannot be neglected. | DU Gang LIU XiaoYan HAN RuQi | 2011 | Science China(Information Sciences)2011，54，8： | 1 |
| 3 | Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect显示文摘 | Liu Xiaoyan Kang Jinfeng Han Ruqi | 2003 | Solid State Communications2003，125，1： | 1 |
| 4 | Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed !aser deposition 显示文摘 | Kang Jinfeng Liu Xiaoyan Lian Guijun Zhang Zhaohui Xiong Guangcheng Guan Xudong Han Ruqi Wang Yangyuan | 2001 | Micro- electronic Engineering2001，56，12： | 1 |
| 5 | Simulation of inhomogeneous strain in Ge-Si core-shell nanowires显示文摘This paper studies the elastic deformation field in lattice-mismatched Ge-Si core-shell nanowires(NWs).Infinite wires with a cylindrical cross section under the assumption of translational symmetry are considered.The strain distributions are found by minimizing the elastic energy per unit cell using finite element method.This paper finds that the trace of the strain is discontinuous with a simple,almost piecewise variation between core and shell,whereas the individual components of the strain can exhibit complex variations.The simulation results are prerequisite of strained band structure calculation,and pave a way for further investigation of strain effect on the related transport property simulation. | Yuhui HE Yuning ZHAO Chun FAN Xiaoyan LIU Ruqi HAN | 2009 | Frontiers of Electrical and Electronic Engineering in China2009，4，3： | 0 |
| 6 | Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature显示文摘High mobility and c-axis orientated ZnO thin films were deposited on glass substrates using RF sputtering method at room temperature.Structural properties of ZnO thin films were investigated by X-ray diffraction (XRD).Surface morphology and roughness were studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM).Electrical properties were measured at room temperature using a Hall effect measurement system.The influence of sputtering power on characteristics of ZnO thin films is studied.The results indicate that the sputtering powers have great influence on the crystal quality and mobility of ZnO thin films.By using optimized sputtering conditions,high crystal quality ZnO thin films with Hall mobility of 34 cm 2 /V·s at room temperature were obtained. | HAN DeDong WANG Yi ZHANG ShengDong SUN Lei HAN RuQi Satoru MATSUMOTO Yuji INO | 2012 | Science China(Information Sciences)2012，55，4： | 0 |
| 7 | Quantitative Investigation of the Velocity Overshoot Overestimation's Impact on Predicting Device Characteristics in HD Model显示文摘 | HOU Danqiong XIA Zhiliang DU Gang LIU Xiaoyan WANG Yi KANG Jinfeng HAN Ruqi | 2006 | Chinese Journal of Electronics2006，15，2： | 0 |
| 8 | Fabrication and characteristics of ZnO MOS capacitors with high-K HfO_2 gate dielectrics显示文摘ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room temperature.And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) capacitors.The temperature to fabricate ZnO MOS capacitors is 400°C,and the low temperature process is applicable for thin film transistors,flat-panel display (FPD),flexible display,etc.The electronic availability of ZnO thin films,which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is investigated.High frequency (1 MHz) capacitance-voltage (C-V) and current-voltage (I-V) characteristics of ZnO-based MOS capacitors are measured.The thermal stability and electronic stability of the ZnO capacitors are investigated,respectively.Experimental results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate dielectrics.Besides,the ZnO capacitors can exhibit high thermal and electronic stabilities. | HAN DeDong,WANG Yi,ZHANG ShengDong,SUN Lei,KANG JinFeng,LIU XiaoYan,DU Gang,LIU LiFeng & HAN RuQi Institute of Microelectronics,Peking University,Beijing 100871,China | 2010 | Science China(Technological Sciences)2010，53，9： | 0 |
| 9 | Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display显示文摘ZnO thin films were successfully grown on flexible plastic substrates using radio-frequency mag-netron sputtering method at room temperature.The effects of the sputtering power on the quality of the ZnO films have been investigated.The results show that thin films were polycrystalline,with wurtzite structure and a strong preferred c-axis orientation (002).The root-mean-square (rms) surface roughness of the ZnO thin films is 22.1 nm.The ZnO thin films fabricated by sputtering with 70 W sputtering power have a high mobility of 34.33 cm 2 /V·s.The ZnO films are shown to be compatible with flexible display on plastic substrates. | HAN DeDong WANG Yi ZHANG ShengDong SUN Lei HAN RuQi Satoru MATSUMOTO Yuji INO | 2012 | Science China(Information Sciences)2012，55，6： | 0 |
| 10 | Differential regulation of JAK1 expression by ETS1 associated with predisposition to primary biliary cholangitis显示文摘Primary biliary cholangitis(PBC)is an autoimmune liver disease characterized by the destruction of intrahepatic small bile ducts and progressive cholestasis,eventually leading to liver cirrhosis and hepatic failure without appropriate treatment(Terziroli Beretta-Piccoli et al.,2019). | Peng Jiang Chan Wang Mingming Zhang Ye Tian Weifeng Zhao Junyi Xin Yexi Huang Zhibin Zhao Wenjuan Sun Jie Long Ruqi Tang Fang Qiu Xingjuan Shi Yi Zhao Li Zhu Na Dai Lei Liu Xudong Wu Jinshan Nie Bo Jiang Youlin Shao Yueqiu Gao Jianjiang Yu Zhigang Hu Zhidong Zang Yuhua Gong Yaping Dai Lan Wang Ningling Ding Ping Xu Sufang Chen Lu Wang Jing Xu Luyao Zhang Junyan Hong Ruonan Qian Hu Li Xuan Jiang Congwei Chen Wenyan Tian Jian Wu Yuzhang Jiang Chongxu Han Kui Zhang Hong Qiu Li Li Hong Fan Liming Chen Jianqiong Zhang Zhongsheng Sun Xiao Han Zhenhua Dai Erguang Li M.Eric Gershwin Zhexiong Lian Xiong Ma Michael F.Seldin Weichang Chen Meilin Wang Xiangdong Liu | 2023 | Journal of Genetics and Genomics2023，50，10： | 0 |
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