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| 1 | 磷掺杂类金刚石薄膜的制备与性能研究显示文摘应用等离子体浸没离子注入与沉积方法合成了磷掺杂的类金刚石(P doped diamond like carbon,P-aopea DLC)薄膜。结构分析表明磷以微米级岛状结构分散于DLC薄膜表层,P的掺杂增加了DLC薄膜的无序性,俄歇能谱证明岛型区域是由P、C、O三种元素形成的化合物,衰减全反射傅里叶红外光谱(ATR-FTIR)的分析结果显示存在P-O-P和P-P-C的非对称伸缩振动。掺杂表面表现出强烈的亲水性(水接触角为16.9°),体外血小板粘附实验结果显示,P掺杂DLC薄膜表面粘附的血小板少且变形小,表现出的血液相容性优于热解碳和未改性DLCo。P-doped DLC薄膜与水的界面张力为2.7 nJ/cm2,具有较理想的接近于血细胞的界面张力,因此与血液保持了较高的相容性。 | 王进 Sunny C.H.Kwok 陈俊英 杨萍 黄楠 P.K.Chu | 2005 | 真空科学与技术学报2005，25，2： | 5 |
| 2 | In situ synthesis of nanostructured titania film on NiTi shape memory alloy by Fenton’s oxidation method显示文摘Fenton’s oxidation method was successfully used to synthesize an ideal titania film in situ on NiTi shape memory alloy(SMA) for medical applications. Characterized with scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffractometry, inductively coupled plasma mass spectrometry and electrochemical tests, it is found that the titania film produced by Fenton’s oxidation method on NiTi SMA is nanostructured and has a Ni-free zone near its top surface, which results in a notable improvement in corrosion resistance and a remarkable decrease in leaching of harmful Ni ions from NiTi SMA in simulated body fluids. The improvement of effectiveness to corrosion resistance and the reduction in Ni release of NiTi SMA by Fenton’s oxidation method are comparable to those by oxygen plasma immersion ion implantation reported earlier. | 储成林 胡涛 S.L.Wu 王如萌 董寅生 林萍华 C.Y.Chung P.K.Chu | 2007 | 中国有色金属学会会刊:英文版2007，17，5： | 3 |
| 3 | Uniformity of TiN Films Fabricated by Hollow Cathode Discharge显示文摘Titanium nitride (TIN) films were deposited on AISI 304 stainless steel substratesusing hollow cathode plasma physical vapor deposition (HC-PVD).Titanium was introduced byeroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited byradio frequency (RF).The substrate bias voltage was varied from 0 to -300 V and the uniformityin film thickness,surface roughness,crystal size,microhardness and wear resistance for the filmwith a diameter of 20 mm was evaluated. Although the central zone of the plasma had thehighest ion density,the film thickness did not vary appreciably across the sample.The resultsfrom atomic force microscopy (AFM) revealed a low surface roughness dominated by an island-likemorphology with a similar crystal size on the entire surface.Higher microhardness was measuredat the central zone of the sample. The sample treated at -200 V had excellent tribologicalproperties and uniformity. | 姜海富 巩春志 田修波 杨士勤 R.K.Y.FU P.K.CHU | 2010 | Plasma Science and Technology2010，12，2： | 2 |
| 4 | Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition显示文摘Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films’on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample. | L.P. Wang B. Y Tang X.B. Tian YX.Leng Q. YZhang and P.K.Chu Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China | 2001 | Journal of Materials Science & Technology2001，17，1： | 1 |
| 5 | Bioactivity of Ceramic Coating on Ti6Al4V Fabricated By Microarc Plasma Oxidation显示文摘Ti6Al4V is a widely applied in medical implants such as bone, joint, and teeth due to its excellent mechanical properties, corrosion resistance, plasticity and the biocompatibility of the surface oxide. However, the native surface oxide film is quite thin (about 5 nm)and techniques such as microarc oxidation,plasma sprayed hydroxyapatitae and plasma immersion ion implantation are used to synthesize thicker surface titanium oxide. | SHENLiru LIUChenling LIJiong P.K.Chu | 2003 | Southwestern Institute of Physics Annual Report2003，，1： | 0 |
| 6 | Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation显示文摘Plasma immersion ion implantation (PIII) is an excellent technique for the surf see modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the process and cannot be ignored. In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable. | X.B.Tian L.P.Wang D.T.K.Kwok B.Y Tang P.K.Chu | 2001 | Journal of Materials Science & Technology2001，17，1： | 0 |
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